Manufacturable RGB laser diode source

ABSTRACT

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation-in-part of U.S. applicationSer. No. 14/312,427, filed Jun. 23, 2014, which is acontinuation-in-part of U.S. application Ser. No. 14/176,403, filed Feb.10, 2014, the entire contents of each of which are incorporated hereinby reference in their entirety for all purposes.

BACKGROUND

In 1960, the laser was first demonstrated by Theodore H. Maiman atHughes Research Laboratories in Malibu. This laser utilized asolid-state flash lamp-pumped synthetic ruby crystal to produce redlaser light at 694 nm. By 1964, blue and green laser output wasdemonstrated by William Bridges at Hughes Aircraft utilizing a gas laserdesign called an Argon ion laser. The Ar-ion laser utilized a noble gasas the active medium and produced laser light output in the UV, blue,and green wavelengths including 351 nm, 454.6 nm, 457.9 nm, 465.8 nm,476.5 nm, 488.0 nm, 496.5 nm, 501.7 nm, 514.5 nm, and 528.7 nm. TheAr-ion laser had the benefit of producing highly directional andfocusable light with a narrow spectral output, but the wall plugefficiency was <0.1%, and the size, weight, and cost of the lasers wereundesirable as well.

As laser technology evolved, more efficient lamp pumped solid statelaser designs were developed for the red and infrared wavelengths, butthese technologies remained a challenge for blue and green lasers. As aresult, lamp pumped solid state lasers were developed in the infrared,and the output wavelength was converted to the visible using specialtycrystals with nonlinear optical properties. A green lamp pumped solidstate laser had 3 stages: electricity powers lamp, lamp excites gaincrystal which lases at 1064 nm, 1064 nm goes into frequency conversioncrystal which converts to visible 532 nm. The resulting green and bluelasers were called “lamped pumped solid state lasers with secondharmonic generation” (LPSS with SHG) had wall plug efficiency of ˜1%,and were more efficient than Ar-ion gas lasers, but were still tooinefficient, large, expensive, fragile for broad deployment outside ofspecialty scientific and medical applications. Additionally, the gaincrystal used in the solid state lasers typically had energy storageproperties which made the lasers difficult to modulate at high speedswhich limited its broader deployment.

To improve the efficiency of these visible lasers, high power diode (orsemiconductor) lasers were utilized. These “diode pumped solid statelasers with SHG” (DPSS with SHG) had 3 stages: electricity powers 808 nmdiode laser, 808 nm excites gain crystal, which lasers at 1064 nm, 1064nm goes into frequency conversion crystal which converts to visible 532nm. The DPSS laser technology extended the life and improved the wallplug efficiency of the LPSS lasers to 5-10%, and furthercommercialization ensued into more high-end specialty industrial,medical, and scientific applications. However, the change to diodepumping increased the system cost and required precise temperaturecontrols, leaving the laser with substantial size and power consumptionwhile not addressing the energy storage properties which made the lasersdifficult to modulate at high speeds.

As high power laser diodes evolved and new specialty SHG crystals weredeveloped, it became possible to directly convert the output of theinfrared diode laser to produce blue and green laser light output. These“directly doubled diode lasers” or SHG diode lasers had 2 stages:electricity powers 1064 nm semiconductor laser, 1064 nm goes intofrequency conversion crystal which converts to visible 532 nm greenlight. These lasers designs are meant to improve the efficiency, costand size compared to DPSS-SHG lasers, but the specialty diodes andcrystals required make this challenging today. Additionally, while thediode-SHG lasers have the benefit of being directly modulate-able, theysuffer from severe sensitivity to temperature which limits theirapplication.

Currently the only viable direct blue and green laser diode structuresare fabricated from the wurtzite AlGaInN material system. Themanufacturing of light emitting diodes from GaN related materials isdominated by the heteroepitaxial growth of GaN on foreign substratessuch as Si, SiC and sapphire. Laser diode devices operate at such highcurrent densities that the crystalline defects associated withheteroepitaxial growth are not acceptable. Because of this, very lowdefect-density, free-standing GaN substrates have become the substrateof choice for GaN laser diode manufacturing. Unfortunately, suchsubstrates are costly and inefficient.

SUMMARY

Embodiments of the invention provide methods for fabricatingsemiconductor laser diodes. Typically these devices are fabricated usingan epitaxial deposition, followed by processing steps on the epitaxialsubstrate and overlying epitaxial material. Merely by way of example,the invention can be applied to applications such as white lighting,white spot lighting, flash lights, automobile headlights, all-terrainvehicle lighting, light sources used in recreational sports such asbiking, surfing, running, racing, boating, light sources used fordrones, planes, robots, other mobile or robotic applications, safety,counter measures in defense applications, multi-colored lighting,lighting for flat panels, medical, metrology, beam projectors and otherdisplays, RGB displays, high intensity lamps, spectroscopy,entertainment, theater, music, and concerts, analysis fraud detectionand/or authenticating, tools, water treatment, laser dazzlers,targeting, communications, visible light communications (VLC), LiFi,transformations, transportations, leveling, curing and other chemicaltreatments, heating, cutting and/or ablating, pumping other opticaldevices, other optoelectronic devices and related applications, andsource lighting and the like. What follows is a general description ofthe typical configuration and fabrication of these devices.

In an example, the present invention provides a method for manufacturinga gallium and nitrogen containing laser diode device with low cost. Themethod includes providing a gallium and nitrogen containing substratehaving a surface region and forming epitaxial material overlying thesurface region, the epitaxial material comprising an n-type claddingregion, an active region comprising at least one active layer overlyingthe n-type cladding region, and a p-type cladding region overlying theactive region. The method includes patterning the epitaxial material toform a plurality of dice, each of the dice corresponding to at least onelaser device, characterized by a first pitch between a pair of dice, thefirst pitch being less than a design width. The method includestransferring each of the plurality of dice to a carrier wafer such thateach pair of dice is configured with a second pitch between each pair ofdice, the second pitch being larger than the first pitch correspondingto the design width. The method includes singulating the carrier waferinto a plurality of laser diode devices on carrier chips. The carrierchips effectively serve as the submount of the laser diode device andcan be integrated directly into a wide variety of package types.

In an example, using basic assumptions about processing and materialcosts, it can be shown that blue-light emitting, GaN-based laser devicecosts below $0.50 per optical Watt and could be as low as $0.10 peroptical Watt by transferring die from 4.5 cm² GaN substrates to 200 mmSiC carriers. This price is highly competitive with state of the artlight emitting diodes and could enable widespread penetration of laserlight sources into markets currently served by LEDs such as generallighting.

In an example, the present die configured with carrier, which can serveas a submount, can be packaged into a module without any further liftoffprocess or the like. The process is efficient and uses conventionalprocess technology. Depending upon the embodiment, these and otherbenefits may be achieved.

The present invention achieves these benefits and others in the contextof known process technology. However, a further understanding of thenature and advantages of the present invention may be realized byreference to the latter portions of the specification and attacheddrawings.

In other embodiments, superluminescent diodes or superluminescent lightemitting diodes (SLEDs) are fabricated according to the presentinvention. In some applications SLEDs may offer improved spectralproperties such as wider spectral output for a shorter coherence length,and/or an improved safety such as eye safety.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified illustration of a laser diode according to anexample of the present invention.

FIGS. 2A-2B are simplified illustrations of a die expanded laser diodeaccording to an example of the present invention.

FIG. 3 is a schematic diagram of semipolar laser diode with the cavityaligned in the projection of c-direction with cleaved or etched mirrorsin an example.

FIG. 4 is a schematic cross-section of ridge laser diode in an example.

FIG. 5 is a top view of a selective area bonding process in an example.

FIG. 6 is a simplified process flow for epitaxial preparation in anexample.

FIG. 7 is a simplified side view illustration of selective area bondingin an example.

FIG. 8 is a simplified process flow of epitaxial preparation with activeregion protection in an example.

FIG. 9 is a simplified process flow of epitaxial preparation with activeregion protection and with ridge formation before bonding in an example.

FIG. 10 is a simplified illustration of anchored PEC undercut (top-view)in an example.

FIG. 11 is a simplified illustration of anchored PEC undercut(side-view) in an example.

FIG. 11a is a simplified illustration of non-epitaxial, electricallyconductive anchored PEC (top view and side-view) in an example.

FIG. 11b is a simplified illustration of the present invention includingan etched facet where the bonding media is comprised of a plurality ofregions with no bonding media underlying the facet region (side-view) inan example.

FIG. 12 is a simplified illustration of a carrier wafer processed to actas a submount.

FIG. 13 is top view of a selective area bonding process with dieexpansion in two dimensions in an example.

FIG. 13a is a cross-section schematic representation of a laser or SLEDdevice in accordance with an embodiment of this invention.

FIG. 13b is a cross-section schematic representation of a laser or SLEDdevice in accordance with an embodiment of this invention.

FIG. 14 is a flow diagram for processing steps and material inputs for atypical laser diode device in and example.

FIG. 15 is a flow diagram for processing steps and material inputs for alow cost laser device fabricated with epitaxial transfer to a carrierwafer in an example.

FIG. 16 is a table showing number of laser or SLED devices that can beprocessed on a substrate at a given die pitch in accordance with anembodiment of this invention.

FIG. 17 is an illustration of bondable area for various substratedimensions on a 100 mm diameter carrier wafer in accordance with anembodiment of this invention.

FIG. 18 is a table showing number of laser or SLED devices that can beprocessed on 50 micron wide die after epi transfer to a carrier inaccordance with an embodiment of this invention.

FIG. 19 is a diagram showing the process flow for fabrication of a smallarea GaN substrate into a chip scale package in accordance with anembodiment of this invention.

FIG. 20 is a schematic comparing a typical laser die fabricated from aGaN wafer to a laser device fabricated on a transferred laser die andsingulated from a carrier wafer in accordance with an embodiment of thisinvention.

FIG. 21 is a drawing of a RGB laser or SLED chip according to anembodiment of this invention.

FIG. 22 is a drawing of a RGB laser or SLED chip according to anembodiment of this invention.

FIG. 23 is a schematic diagram of the process for bonding dice frommultiple epitaxial wafers to the same carrier wafer according to anembodiment of this invention.

FIG. 24 is a schematic diagram of the process for bonding dice frommultiple epitaxial wafers to the same carrier wafer according to anembodiment of this invention.

FIG. 25 shows schematic diagrams of layouts for laser or SLED chipscontaining multiple die which will be individually addressable accordingto some embodiments of this invention.

FIG. 25a is a schematic diagram of conventional scanning mirrorprojection engine according to an embodiment of this invention.

FIG. 25b is a schematic diagram of scanning mirror projection enginewithout optical combiner optics, using multiple monochromatic lightsource(s) and correcting electronic video processor according to anembodiment of this invention.

FIG. 25c is a schematic example of misalignment of color images fromoptical engine without optical alignment according to an embodiment ofthis invention.

FIG. 25d is a flow flowchart description of the method for imagecorrection to compensate spatially offset emitters according to anembodiment of this invention.

FIG. 25e is a schematic diagram addressing waveform correctionsaccording to an embodiment of this invention.

FIG. 25f presents a schematic representation of a RGB laser chiputilizing a dielectric waveguide patterned on the carrier wafer tocombine individual laser beams according an embodiment of the presentinvention.

FIG. 25g presents a schematic representation of a RGB laser chiputilizing a dielectric waveguide patterned on the carrier wafer tocombine individual laser beams according to an embodiment of presentinvention.

FIG. 26 shows schematic diagrams of the layout for laser or SLED chipsincluding metallic through vias containing multiple die which will beindividually addressable according to an embodiment of this invention.

FIG. 27 shows schematic diagrams of the layout for laser or SLED chipscontaining multiple die which will be individually addressable accordingto some embodiments of this invention.

FIG. 27a shows a representation of the CIE color gamut in the x and ycoordinates according to an embodiment of present invention.

FIG. 28 schematically depicts the energy conversion efficiency vs inputpower density for GaN-based Light Emitting Diodes (LEDs) and LaserDiodes (LD) in an example.

FIG. 29 schematically depicts an example of the present invention.

FIG. 30 schematically depicts an alternative example of the presentinvention.

FIG. 31 schematically depicts an alternative example of the presentinvention.

FIG. 32 is a schematic cross-sectional view of the integrated, low-costlaser-based or SLED-based light module in an example.

FIG. 33 schematically depicts an example where the light from the one ormore blue laser.

FIG. 34 schematically depicts an alternative of the integrated, low-costlaser-based or SLED-based light module in an alternative example of thepresent invention.

FIG. 35 schematically depicts an integrated lighting apparatus in anexample of the present invention.

DETAILED DESCRIPTION

Embodiments of the invention provide methods for fabricatingsemiconductor laser diodes. Typically these devices are fabricated usingan epitaxial deposition, followed by processing steps on the epitaxialsubstrate and overlying epitaxial material. Merely by way of example,the invention can be applied to applications such as white lighting,white spot lighting, flash lights, automobile headlights, all-terrainvehicle lighting, light sources used in recreational sports such asbiking, surfing, running, racing, boating, light sources used fordrones, planes, robots, other mobile or robotic applications, safety,counter measures in defense applications, multi-colored lighting,lighting for flat panels, medical, metrology, beam projectors and otherdisplays, RGB displays, high intensity lamps, spectroscopy,entertainment, theater, music, and concerts, analysis fraud detectionand/or authenticating, tools, water treatment, laser dazzlers,targeting, communications, LiFi, visible light communications (VLC),transformations, transportations, leveling, curing and other chemicaltreatments, heating, cutting and/or ablating, pumping other opticaldevices, other optoelectronic devices and related applications, andsource lighting and the like. What follows is a general description ofthe typical configuration and fabrication of these devices.

Reference can be made to the following description of the drawings, asprovided below.

FIG. 1 is a side view illustration of a state of the art GaN based laserdiode after processing. Laser diodes are fabricated on an originalgallium and nitrogen containing epitaxial substrate 100, typically withepitaxial n-GaN and n-side cladding layers 101, active region 102, p-GaNand p-side cladding 103, insulating layers 104 and contact/pad layers105. Laser die pitch is labeled. All epitaxy material not directly underthe laser ridge is wasted in this device design. In an example, n-typecladding may be comprised of GaN, AlGaN, or InAlGaN.

FIG. 2A is a side view illustration of gallium and nitrogen containingepitaxial wafer 100 before the die expansion process and FIG. 2B is aside view illustration of carrier wafer 106 after the die expansionprocess. These figures demonstrates a roughly five times expansion andthus five times improvement in the number of laser diodes, which can befabricated from a single gallium and nitrogen containing substrate andoverlying epitaxial material. Typical epitaxial and processing layersare included for example purposes and include n-GaN and n-side claddinglayers 101, active region 102, p-GaN and p-side cladding 103, insulatinglayers 104, and contact/pad layers 105. Additionally, a sacrificialregion 107 and bonding material 108 are used during the die expansionprocess.

FIG. 3 is a schematic diagram of semipolar laser diode with the cavityaligned in the projection of c-direction with cleaved or etched mirrors.Shown is a simplified schematic diagram of semipolar laser diode withthe cavity aligned in the projection of c-direction with cleaved oretched mirrors. The laser stripe region is characterized by a cavityorientation substantially in a projection of a c-direction, which issubstantially normal to an a-direction. The laser strip region has afirst end 107 and a second end 109 and is formed on a projection of ac-direction on a {20-21} gallium and nitrogen containing substratehaving a pair of cleaved mirror structures, which face each other.

FIG. 4 is a Schematic cross-section of ridge laser diode in an example,and shows a simplified schematic cross-sectional diagram illustrating astate of the art laser diode structure. This diagram is merely anexample, which should not unduly limit the scope of the claims herein.As shown, the laser device includes gallium nitride substrate 203, whichhas an underlying n-type metal back contact region 201. In anembodiment, the metal back contact region is made of a suitable materialsuch as those noted below and others. In an embodiment, the device alsohas an overlying n-type gallium nitride layer 205, an active region 207,and an overlying p-type gallium nitride layer structured as a laserstripe region 211. Additionally, the device may also include an n-sideseparate confinement heterostructure (SCH), p-side guiding layer or SCH,p-AlGaN EBL, among other features. In an embodiment, the device also hasa p++ type gallium nitride material 213 to form a contact region.

FIG. 5 is a simplified top view of a selective area bonding process andillustrates a die expansion process via selective area bonding. Theoriginal gallium and nitrogen containing epitaxial wafer 201 has hadindividual die of epitaxial material and release layers defined throughprocessing. Individual epitaxial material die are labeled 202 and arespaced at pitch 1. A round carrier wafer 200 has been prepared withpatterned bonding pads 203. These bonding pads are spaced at pitch 2,which is an even multiple of pitch 1 such that selected sets ofepitaxial die can be bonded in each iteration of the selective areabonding process. The selective area bonding process iterations continueuntil all epitaxial die have been transferred to the carrier wafer 204.The gallium and nitrogen containing epitaxy substrate 201 can nowoptionally be prepared for reuse.

In an example, FIG. 6 is a simplified diagram of process flow forepitaxial preparation including a side view illustration of an exampleepitaxy preparation process flow for the die expansion process. Thegallium and nitrogen containing epitaxy substrate 100 and overlyingepitaxial material are defined into individual die, bonding material 108is deposited, and sacrificial regions 107 are undercut. Typicalepitaxial layers are included for example purposes and are n-GaN andn-side cladding layers 101, active region 102, and p-GaN and p-sidecladding 103.

In an example, FIG. 7 is a simplified illustration of a side view of aselective area bonding process in an example. Prepared gallium andnitrogen containing epitaxial wafer 100 and prepared carrier wafer 106are the starting components of this process. The first selective areabonding iteration transfers a fraction of the epitaxial die, withadditional iterations repeated as needed to transfer all epitaxial die.Once the die expansion process is completed, state of the art laserprocessing can continue on the carrier wafer. Typical epitaxial andprocessing layers are included for example purposes and are n-GaN andn-side cladding layers 101, active region 102, p-GaN and p-side cladding103, insulating layers 104 and contact/pad layers 105. Additionally, asacrificial region 107 and bonding material 108 are used during the dieexpansion process.

In an example, FIG. 8 is a simplified diagram of an epitaxy preparationprocess with active region protection. Shown is a side view illustrationof an alternative epitaxial wafer preparation process flow during whichsidewall passivation is used to protect the active region during any PECundercut etch steps. This process flow allows for a wider selection ofsacrificial region materials and compositions. Typical substrate,epitaxial, and processing layers are included for example purposes andare the gallium and nitrogen containing substrate 100, n-GaN and n-sidecladding layers 101, active region 102, p-GaN and p-side cladding 103,insulating layers 104 and contact/pad layers 105. Additionally, asacrificial region 107 and bonding material 108 are used during the dieexpansion process.

In an example, FIG. 9 is a simplified diagram of epitaxy preparationprocess flow with active region protection and ridge formation beforebonding. Shown is a side view illustration of an alternative epitaxialwafer preparation process flow during which sidewall passivation is usedto protect the active region during any PEC undercut etch steps andlaser ridges are defined on the denser epitaxial wafer before transfer.This process flow potentially allows cost saving by performingadditional processing steps on the denser epitaxial wafer. Typicalsubstrate, epitaxial, and processing layers are included for examplepurposes and are the gallium and nitrogen containing substrate 100,n-GaN and n-side cladding layers 101, active region 102, p-GaN andp-side cladding 103, insulating layers 104 and contact/pad layers 105.Additionally, a sacrificial region 107 and bonding material 108 are usedduring the die expansion process.

FIG. 10 is a simplified example of anchored PEC undercut (top-view).Shown is a top view of an alternative release process during theselective area bonding of narrow mesas. In this embodiment a top downetch is used to etch away the area 300, followed by the deposition ofbonding metal 303. A PEC etch is then used to undercut the region 301,which is wider than the lateral etch distance of the sacrificial layer.The sacrificial region 302 remains intact and serves as a mechanicalsupport during the selective area bonding process. Anchors such as thesecan be placed at the ends of narrow mesas as in the “dog-bone” version.Anchors can also be placed at the sides of mesas (see peninsular anchor)such that they are attached to the mesa via a narrow connection 304which is undercut and will break preferentially during transfer.Geometric features that act as stress concentrators 305 can be added tothe anchors to further restrict where breaking will occur. The bondmedia can also be partially extended onto the anchor to prevent breakagenear the mesa.

FIG. 11 is a simplified view of anchored PEC undercut (side-view) in anexample. Shown is a side view illustration of the anchored PEC undercut.Posts of sacrificial region are included at each end of the epitaxialdie for mechanical support until the bonding process is completed. Afterbonding the epitaxial material will cleave at the unsupported thin filmregion between the bond pads and intact sacrificial regions, enablingthe selective area bonding process. Typical epitaxial and processinglayers are included for example purposes and are n-GaN and n-sidecladding layers 101, active region 102, p-GaN and p-side cladding 103,insulating layers 104 and contact/pad layers 105. Additionally, asacrificial region 107 and bonding material 108 are used during the dieexpansion process. Epitaxial material is transferred from the galliumand nitrogen containing epitaxial wafer 100 to the carrier wafer 106.Further details of the present method and structures can be found moreparticularly below.

FIG. 11a schematic representation of electrically-conductive,non-epitaxial anchor layouts. Device layer mesas 201 are etched into thedonor wafer. The mesas are then overlaid with bond media 203. The bondmedia is comprised of a plurality of regions, with one region isolatedto the top of the device layer mesa, a second region overlays the endsof the mesa and comprises the anchor region of the mesas. Bond mediaextends over the edge of the mesa in the anchor regions. Schematicrepresentations of the cross sections A and B are shown. Cross-section Ashows a region of the mesa far from the anchors. Bond media 205 isisolated to the top of the mesas and the etched trenches. On the tops ofthe mesas, the bond media overlays the p-contact metal layers 208. Boththe active region 206 and the sacrificial layers 207 are exposed to theside of the mesa. Cross-section B shows the anchor region of the mesa.Here the bond media overlays the mesa tops as well as the trenches.Regions of bond media 209 connect the bond media on the mesa tops tothat in the trenches; acting as both anchors as well as conducting pathsfor shorting the active region.

FIG. 11b schematically shows an embodiment including an etched facetwhere the bonding media is comprised of a plurality of regions with nobonding media underlying the region of the device layers where the facetis etched. A carrier wafer 106 is provided and overlaid by a pluralityof regions comprised of bond media 105. A device layer mesa is provided,also overlaid by a plurality of regions of bond material 104. The mesais comprised by two regions: a cavity region 101 and an anchor region102. Only one end of the cavity region is shown. The opposite end wouldalso have an anchor region. The cavity and anchor regions are separatedby a region that is not over laid by bond media. A silicon oxide hardmask 107 is overlaid on the device layer mesa and patterned with awindow that will define the facet etch region. A dry etch process isused to etch the device layers to form a first facet 108. The carrierwafer is then separated along a separation-line 109 to form a laser bar.

FIG. 12 is a simplified illustration of a carrier wafer processed to actas a submount. The carrier wafer 402 is processed such that the backsidecontains a bonding media 401 which could be epoxy, gold-tin solder orthe like. The carrier is also processed with a first passivating layer403 that electrically isolates the carrier wafer from the overlayinglayers. A conductive bond pad 405 overlays the passivating layer andallows for electrical access via a probe or wire bond to the bond pad108 used during the laser die transfer process. After transfer of thelaser die 406 a second electrical contact and bond-pad layer 407 isadded overlaying both the laser device patterned on the die as well aspart of the bottom side contact pad 405. A second passivating layer 408separates the two bond pads.

FIG. 13 is top view of a selective area bonding process with dieexpansion in two dimensions in an example. The substrate 901 ispatterned with transferable die 903. The carrier wafer 902 is patternedwith bond pads 904 at both a second and fourth pitch that are largerthan the die pitches on the substrate. After the first bonding, a subsetof the laser die is transferred to the carrier. After the second bondinga complete row of die are transferred.

FIG. 13a Schematic representation of a laser device in accordance withan embodiment of this invention. The carrier wafer contains multiple,conductive through-vias 309 per die, with each through-via beingoverlaid on both sides of the carrier wafer with a metallic pad 310. Thedevice mesa is transferred to the carrier wafer and patterned with aridge. The bond pad on the carrier wafer is electrically connected toone of the through vias. A metal electrode is deposited on top of theridge and is connected to the metal pad of one of the through-vias. Adielectric material is overlaid on the carrier such that the device mesaand electrical interconnects are fully encapsulated by the dielectric. Aplanarization process such as lapping is used to planarized thedielectric and leave a thin (less than 10 micron thick and preferablyless than 1 micron thick) layer of dielectric above the metal electrodeon top of the laser ridge. The planarized dielectric is then overlaidwith a bond pad 308 which is used to solder the device to a heat sinksuch that the backside metal contacts are accessible for electricallycontacting the laser device.

FIG. 13b schematically shows an embodiment including an etched facetwhere the bonding media is comprised of a plurality of regions with nobonding media underlying the region of the device layers where the facetis etched. A carrier wafer 106 is provided and overlaid by a pluralityof regions comprised of bond media 105. A device layer mesa is provided,also overlaid by a plurality of regions of bond material 104. The mesais comprised by two regions: a cavity region 101 and an anchor region102. Only one end of the cavity region is shown. The opposite end wouldalso have an anchor region. The cavity and anchor regions are separatedby a region that is not over laid by bond media. A silicon oxide hardmask 107 is overlaid on the device layer mesa and patterned with awindow that will define the facet etch region. A dry etch process isused to etch the device layers to form a first facet 108. The carrierwafer is then separated along a separation-line 109 to form a laser bar.

FIG. 14 is a flow diagram for processing steps and material inputs for atypical laser diode device in and example. Here GaN substrates aredeposited on to form a LD device wafer. Laser ridges, along withpassivation and electrical contact layers are fabricated on the waferfront side. The wafer is then thinned, which consumes most of thethickness of the wafer. The backside electrical contacts are processed.The wafer is then scribed and cleaved to form facets, facet coatings areadded and the laser devices are tested for quality assurance. The laserbars are then singulated into individual die and attached to a submount.The process flow for a GaAsP based laser would be substantively similar.

FIG. 15 is a flow diagram for processing steps and material inputs for alow cost GaN laser device fabricated with epitaxial transfer to acarrier wafer in and example. Here GaN substrates are deposited on toform a LD device wafer. Laser die are processed in preparation fortransfer. The laser die are then transferred to a carrier wafer. Laserridges, passivation layers and contacts are then fabricated on the dieon the carrier. In the case where etched facets are used the devices aretested on wafer. The carrier is then singulated into individual die. Theprocess flow for a GaAsP based laser would be substantively similar.

FIG. 16 is a table showing number of laser devices that can be processedon a substrate at a given die pitch. The table shows values forsubstrates of three geometries 25.4 mm, 32 mm diameter round wafers and2×2 cm² square wafers. As the die pitch is decreased the density ofdevices that can be processed on a substrate increases dramatically.

FIG. 17 is an illustration of bondable area for various substratedimensions on a 100 mm diameter carrier wafer 1001. In thisconfiguration die expansion is happening in one dimension only. Thenumber of transfers possible is fixed by the size and shape of thesubstrate relative to the carrier. Several examples are shown, including25.4 mm diameter wafers 1002, 32 mm diameter wafers 1003 and 2×2 cm²substrates 1004.

FIG. 18 is a table showing number of laser devices that can be processedon about 50 micron wide die after epi transfer to a carrier at varioussecond pitches. The second pitch, e.g. the die pitch on the carrier,relative to the pitch on the substrate determines the fraction of die onthe substrate that can be transferred in each transfer step. A carrierwafer may therefore contain die from multiple substrates, one substrateor only part of a single substrate depending on the sizes of the firstand second pitches.

FIG. 19 shows a pictorial representation of the process flow forfabrication of GaN based laser diodes devices from epitaxial films onsubstrates to final applications. Die may be fabricated on 32 mm GaNwafers and then transferred to a 100 mm SiC substrate. After processingof the die into laser devices the SiC carrier is singulated intoindividual laser chips that are ready to be installed in variousapplications such as displays, light sources for general lighting,projectors and car headlamps among others. In this example, about 50micron wide mesas with a first pitch of about 70 microns may betransferred to the carrier wafer at a second pitch of about 490 microns.

FIG. 20 shows a schematic representation of a typical laser die onsubmount 1102 and a device of this invention 1101. The die on submountmay be about 1.2 mm long by about 30 micron wide laser ridge fabricatedon a GaN substrate thinned to about 75 microns and cleaved into laserdie about 1.2 mm long and about 150 microns wide. These die are thenattached to a larger submount patterned with electrically isolated wirebond pads. The wire bond pads are connected electrically to the top andbottom of the laser die via wire bonds and a soldered connectionrespectively. In the chip-scale device, an array of about 50 micron wideby about 1.2 mm by about 2 micron thick laser die are transferred to aSiC carrier wafer, electrical connections and wire-bond pads arefabricated using wafer-scale lithographic processes. The resulting chipis about 1.2 mm by about 0.5 mm wide, however it should be noted thatthe size of the resulting chip can be scaled by adjusting the pitch ofthe laser die array on the carrier wafer. In both devices, electricalcontact to the pads can be made either by wire bonds or via detachableconnections such as pogo-pins, spring clips or the like.

FIG. 21 is a drawing of a RGB laser chip fabricated using the selectivearea bonding process as according to an embodiment. Three laser dice 316are bonded to a carrier wafer 310 and processed with laser features(ridges, passivation, electrical contacts, etc.) such that the laserridges are parallel. The dice are electrically isolated from the carrierwafer material. A common bottom contact 314 is shared between the diewhile individual top-side electrical contacts 311 312 and 313 areprovided such that the laser devices on each die can be operatedindividually. The emission cones 315 of the laser devices on each of thedie overlap substantially, deviating only lateral by a distance lessthan or equal to the total width spanned by the laser dice. In thisdrawing the laser chip has been singulated from the original carrierwafer.

FIG. 22 is a drawing of a RGB laser chip fabricated using the selectivearea bonding according to an embodiment. Three laser dice 316 are bondedto a carrier wafer 310 and processed with laser features (ridges,passivation, electrical contacts, etc.) such that the laser ridges areparallel. The dice are electrically isolated from the carrier wafermaterial. The top-side electrical contacts 311 312 and 313 for each dieare used as the bonding layer for the next die such that the die areoverlaid. Passivating layers 324 are used to separate the bulk of thelaser die from the top-side electrical contacts such that current canonly pass through the etched laser ridge. In this configuration, thereis no electrode common to all laser die, but rather the anode for onedie acts as the cathode for the next. Due to overlaying the laser die,the ridges can be placed close together. As shown, the ridges do notoverlap, but it should be recognized that other configurations arepossible. For example, the ridges could be aligned laterally to withinthe tolerances of the lithographic process.

FIG. 23 shows a schematic of the cross section of a carrier wafer duringvarious steps in a process that achieves this RGB laser chip. Die 502from a first epitaxial wafer is transferred to a carrier wafer 106 usingthe methods described above. A second set of bond pads 503 are thendeposited on the carrier wafer and are made with a thickness such thatthe bonding surface of the second pads is higher than the top surface ofthe first set of transferred die 502. This is done to provide adequateclearance for bonding of the die from the second epitaxial wafer. Asecond substrate 506 which might contain die of a different color,dimensions, materials, and other such differences is then used totransfer a second set of die 507 to the carrier. Finally, the laserridges are fabricated and passivation layers 104 are deposited followedby electrical contact layers 105 that allow each dice to be individuallydriven. The die transferred from the first and second substrates arespaced at a pitch 505 which is smaller than the second pitch of thecarrier wafer 504. This process can be extended to transfer of die fromany number of substrates, and to the transfer of any number of laserdevices per dice from each substrate.

FIG. 24 shows a schematic of the cross section of a carrier wafer duringvarious steps in a process that achieves RGB laser chip. Die 502 from afirst epitaxial wafer is transferred to a carrier wafer 106 using themethods described above. Laser ridges, passivation layers 104 and ridgeelectrical contacts 105 are fabricated on the die. Subsequently bondpads 503 are deposited overlaying the ridge electrical contacts. Asecond substrate 506 which might contain die of a different color,dimensions, materials, and other such differences is then used totransfer a second set of die 507 to the carrier at the same pitch as thefirst set of die. Laser ridges, passivation layers and ridge electricalcontacts can then be fabricated on the second set of die. Subsequent diebond and laser device fabrication cycles can be carried out to produce,in effect, a multiterminal device consisting of an arbitrary number oflaser die and devices.

FIG. 25 shows schematics of the layout of three multi-die laser chipsaccording to embodiments of this invention. Layout A and accompanyingcross-section B show a laser chip comprised by a singulated piece of acarrier wafer 601, three laser die 602 transferred from epitaxialsubstrates, and metal traces and pads 603 for electrically connecting tothe die. Layout A has the die bonded directly to the carrier wafer,which is both conductive and which forms a common electrode connected toa metal pad 605 on the backside of the carrier wafer. A passivatinglayer 606 is used to isolate the metal traces and pads 603 which contactthe laser ridges and form the second electrode of the laser devices. Theridge side contacts are separate and electrically isolated such that thelaser devices may be run independently. Layout C and accompanyingcross-section D show a similar structure, however the laser die arebonded to a metal layer 604 which is electrically isolated from thecarrier wafer by passivation layers 606. A bond pad 605 is overlaid onthe backside of the carrier wafer, providing a means to attach the laserchip to a submount, heat sink, printed circuit board or any otherpackage. In this structure, the carrier wafer need not be conductive.Layout E and accompanying cross section F show a similar structure aslayout C, however the carrier wafer is conductive and serves as a commonelectrode for the laser mesas. A passivation layer is deposited betweenthe carrier and the backside bond pad 605 to electrically isolate thechip from the submount, heatsink, circuit board or other package type itis installed into.

FIG. 25a is a schematic illustration demonstrating prior artconfigurations for projection displays based on RGB sources. Theprojection apparatus includes the optical projection engine 110 and thevideo electronics module 150. The optical engine 110 comprises of lightsources, optical components and a Micro-Electro-Mechanical Systems(MEMS) or conventional scanning mirror 160. The optical engine 110 canbe enclosed in the housing having an aperture that allows the light beamfrom the engine to generate projected image on the screen 170.

FIG. 25b is a schematic of a projection display system according to thisinvention is shown in. 2. Many components have the same or similarfunctionality as those outlined in FIG. 25a . The three lasers 231, 232and 233 are closely spaced and integrated with the light beamcollimating optics element 220. No light combining optics is requiredand no active alignment of collimating lenses and other optical elementsis used, resulting with Red, Green and Blue (RGB) beams that are notfully superimposed and have differences in beam directions in twodimensions.

The electronics module 250 has the conventional display controller 251,servo controller 253, optional safety monitor 254, but additionallyincludes electronic video processor 256 that modifies the video streamsto correct the modulation of the laser drivers 252 in order to accountfor the misalignment and differences between directionality of the RGBbeams described below.

FIG. 25c illustrates the position and orientation misalignment thatresults from the finite separation of the tightly spaced multi-coloremitters (lasers or SLEDs). Taking the green image 310 as the reference,the red image 320 and blue image 330 are displaced and rotated withrespect to the green image.

FIG. 25d is a flow flowchart description of the method for imagecorrection to compensate spatially offset emitters, and FIG. 25e is aschematic diagram addressing waveform corrections.

FIG. 25f presents a schematic representation of a RGB laser chiputilizing a dielectric waveguide patterned on the carrier wafer tocombine individual laser beams. The laser carrier chip 301 is cut fromthe carrier wafer. Three laser or SLED devices 302 are transferred tothe laser chip. A dielectric waveguide 304 is deposited and patterned onthe carrier utilizing standard lithographic processes. In this case, theemitted laser light is combined from three separate waveguides, combinedinto one waveguide and emitted from the dielectric waveguide end 305.

FIG. 25g presents a schematic representation of a RGB laser chiputilizing a dielectric waveguide patterned on the carrier wafer tocombine individual laser beams. The laser carrier chip 201 is cut fromthe carrier wafer. Three laser or SLED devices 202 are transferred tothe laser chip. A dielectric waveguide 205 is deposited and patterned onthe carrier utilizing standard lithographic processes. Patternedfeatures of the waveguide such as total-internal reflection basedturning mirrors 204 can be included to turn the emitted laser light. Inthis case, the emitted laser light is turned at a 90 degree angle andemitted from the dielectric waveguide end 206.

FIG. 26 shows schematics of the layout of a multi-die laser chipsaccording to an embodiment of this invention. Layout A and accompanyingcross-section B show a laser chip comprised by a singulated piece of acarrier wafer 701, three laser die 702 transferred from epitaxialsubstrates, and metal traces and conductive through vias 703 forelectrically connecting to the die. The through vias penetrate throughthe carrier wafer and may be covered by bond pads which are not shown.The laser die are bonded to the carrier via a common electrode 704,however the ridge side contacts to the laser devices are electricallyisolated from the common electrode metal and are connected to throughvias that are isolated from the common electrode. A passivation layer705 isolates the laser die and common electrode from metal filledthrough vias located beneath the die which provide a region higherthermal conductivity beneath the dies to facilitate heat extraction, butwhich are electrically isolated from laser die. In this embodiment, thecarrier wafer must be electrically insulating.

FIG. 27 shows schematics of the layout and fabrication of a multi-dielaser chip according to an embodiment of this invention. Layout A showsthe chip after bonding of the die, but before singulation andfabrication of the laser devices. Laser die 801 are bonded to thecarrier wafer 804 via bond pads 802. The carrier wafer is electricallyconductive and acts as a common electrode. A bond pad 805 is overlaid onthe backside of the carrier wafer to provide a means of attaching thechip to a heat sink, submount or package, as well as to provide a meansof electrically connecting to the device. A passivation layer 803separates the carrier wafer from conductive layers 807 that makeelectrical contact to devices on individual laser die. A secondpassivation layer 806 is overlaid on the die and a conductive layer isoverlaid on the second passivation layer to provide an electricallyisolated electrical contact to the middle die. This arrangement allowsbond pads to be formed which connect to the entire length of the laserridge while being wide enough to be accessible with wire bonds. Planview C shows part of the array of these devices fabricated on a carrierwafer. Lines 808 and 809 show the locations of cleaves used to singulatethe carrier wafer into individual laser chips as well as form the frontand back facets of the laser devices. Laser skip scribes 810 are used toprovide guides for the cleaves. This configuration would require asingle crystal carrier wafer in order to guide the cleave.

FIG. 27a shows a representation of the CIE color gamut in the x and ycoordinates. The commonly used RGB color space is indicated by theregion 101. A three-emitter laser-based RGB device is shown by 102, withlasers emitting at 635, 530 and 450 nm. A four-emitter laser-baseddevice is shown by 103, with lasers emitting at 635, 530, 510 and 450nm. A five-emitter laser-based device is shown by 104, with lasersemitting at 635, 525, 510, 495 and 450 nm.

FIG. 28 schematically depicts the energy conversion efficiency vs inputpower density for GaN-based Light Emitting Diodes (LEDs) and LaserDiodes (LD) in an example. The typical operation regime for laser diodesis much higher than for LEDs, indicating that the output power densityfor laser diodes can be much higher than for LEDs. Note that this figurewas taken from reference 2.

FIG. 29 schematically depicts an example of the present invention. Anintegrated, low-cost laser-based light module (3001) is composed of oneor more blue laser diodes (3002) and a wavelength conversion element(3003), attached to a common substrate (3004). Metallic traces (3005)enable electrical interconnections and thermal connection to the commonsubstrate.

FIG. 30 schematically depicts an alternative example of the presentinvention. An integrated, low-cost laser-based light module (3006) iscomposed of one or more blue laser diodes (3002) and a wavelengthconversion element (3003), attached to a common substrate (3004).Metallic traces (3005) enable electrical interconnections and thermalconnection to the common substrate.

FIG. 31 schematically depicts an alternative example of the presentinvention. An integrated, low-cost laser-based light module (3007) iscomposed of one or more blue laser diodes (3002) and a wavelengthconversion element (3003), attached to a common substrate (3004).Metallic traces (3005) enable electrical interconnections and thermalconnection to the common substrate.

FIG. 32 is a schematic cross-sectional view of the integrated, low-costlaser-based light module (3001) in an example. One or more blue laserdiodes (3002) and a wavelength conversion element (3003), attached to acommon substrate (3004). Metallic traces (3005) enable electricalinterconnections. Thermally and electrically conducting attach materials(3009) are used to attach both the laser diodes and the wavelengthconversion element to the common substrate (3004). An optionalreflective element (3010) may be inserted between the wavelengthconversion element and the attach material. An optional electricallyinsulating layer (3011) may be applied to the common substrate if thecommon substrate is electrically conductive.

FIG. 33 schematically depicts an example where the light from the one ormore blue laser diodes (3002) are coupled into the wavelength conversionelement (3003) through an geometric feature (3013). An optional opticalelement (3014) may be utilized to improve the coupling efficiency. Anoptional optically reflecting element (3009) may be attached to thesides of the wavelength conversion element, with a concomitant geometricfeature aligned to the feature (3013).

FIG. 34 schematically depicts an alternative example of the integrated,low-cost laser-based light module (3015), where the common substrate(3004) is optically transparent. The light from the one or more bluelaser diodes (3002) are coupled into the wavelength conversion element(3003) through apertures (3013) in an optional reflective element (3010)which covers the majority of the exposed surfaces of the wavelengthconversion element. An optical exit aperture (3016) allows light to beemitted downward through the transparent common substrate, as depictedby the arrow (3017).

FIG. 35 schematically depicts an integrated lighting apparatus (3019)which includes one or more integrated low-cost, laser-based lightsources (3020), a heat sink (3021), and an optional optical element forshaping or modifying the spectral content of the exiting beam (3022),and an optional integrated electronic power supply (3023) and anoptional electronic connection element (3024) in an example.

As further background for the reader, gallium nitride and relatedcrystals are difficult to produce in bulk form. Growth technologiescapable of producing large area boules of GaN are still in theirinfancy, and costs for all orientations are significantly more expensivethan similar wafer sizes of other semiconductor substrates such as Si,GaAs, and InP. While large area, free-standing GaN substrates (e.g. withdiameters of two inches or greater) are available commercially, theavailability of large area non-polar and semi-polar GaN substrates isquite restricted. Typically, these orientations are produced by thegrowth of a c-plane oriented bool, which is then sliced into rectangularwafers at some steep angle relative to the c-plane. The width of thesewafers is limited by the thickness of the c-plane oriented boule, whichin turn is restricted by the method of boule production (e.g. typicallyhydride vapor phase epitaxy (HVPE) on a foreign substrate). Such smallwafer sizes are limiting in several respects. The first is thatepitaxial growth must be carried out on such a small wafer, whichincreases the area fraction of the wafer that is unusable due tonon-uniformity in growth near the wafer edge. The second is that afterepitaxial growth of optoelectronic device layers on a substrate, thesame number of processing steps are required on the small wafers tofabricate the final device as one would use on a large area wafer. Bothof these effects drive up the cost of manufacturing devices on suchsmall wafers, as both the cost per device fabricated and the fraction ofwafer area that is unusable increases with decreasing wafer size. Therelative immaturity of bulk GaN growth techniques additionally limitsthe total number of substrates which can be produced, potentiallylimiting the feasibility scaling up a non-polar or semi-polar GaNsubstrate based device.

Given the high cost of all orientations of GaN substrates, thedifficulty in scaling up wafer size, the inefficiencies inherent in theprocessing of small wafers, and potential supply limitations onsemi-polar and nonpolar wafers, it becomes extremely desirable tomaximize utilization of substrates and epitaxial material. In thefabrication of lateral cavity laser diodes, it is typically the casethat minimum die length is determined by the laser cavity length, butthe minimum die width is determined by other device components such aswire bonding pads or considerations such as mechanical area for diehandling in die attach processes. That is, while the laser cavity lengthlimits the laser die length, the laser die width is typically muchlarger than the laser cavity width. Since the GaN substrate andepitaxial material are only critical in and near the laser cavity regionthis presents a great opportunity to invent novel methods to form onlythe laser cavity region out of these relatively expensive materials andform the bond pad and mechanical structure of the chip from a lower costmaterial. Typical dimensions for laser cavity widths are about 1-30 μm,while wire bonding pads are ˜100 μm wide. This means that if the wirebonding pad width restriction and mechanical handling considerationswere eliminated from the GaN chip dimension between >3 and 100 timesmore laser diode die could be fabricated from a single epitaxial wafer.This translates to a >3 to 100 times reduction in epitaxy and substratecosts. In conventional device designs, the relatively large bonding padsare mechanically supported by the epitaxy wafer, although they make nouse of the material properties of the semiconductor beyond structuralsupport.

In an example, the present invention is a method of transferring thesemiconductor material comprising a laser diode from the substrate onwhich it was epitaxially grown to a second substrate, i.e. a carrierwafer. This method allows for one or more AlInGaN or AlInGaP laserdevices to be transferred to a carrier wafer. The transfer of the laserdevices from their original substrates to a carrier wafer offers severaladvantages. The first is maximizing the number of GaN laser deviceswhich can be fabricated from a given epitaxial area on a gallium andnitrogen containing substrate by spreading out the epitaxial material ona carrier wafer such that the wire bonding pads or other structuralelements are mechanically supported by relatively inexpensive carrierwafer, while the light emitting regions remain fabricated from thenecessary epitaxial material. This will drastically reduce the chip costin all gallium and nitrogen based laser diodes, and in particular couldenable cost efficient nonpolar and semipolar laser diode technology.

Another advantage is integration of multiple aspects of theoptoelectronic device normally provided by components other than thelaser diodes into the carrier wafer. For example, the carrier wafermaterial could be chosen such that it could serve as both a mechanicalcarrier for laser device material as well as a submount providing athermally conductive but electrically isolating connection to the laserdevice package and heat sink. This is a key advantage, in that theresulting part, after singulation of individual chips from the carrierwafer, is a fully functional laser light emitting device. Typicallysubmounts are patterned with a solder pad that connects to a wire bondpad. In this sense, the laser die on submount is a simple laser packagethat provides mechanical support and electrical access to the laserdevice and can be considered the fundamental building block of any laserbased light source. By combining the functions of the carrier wafer andthe submount this invention avoids relatively expensive pick-and-placeand assembly steps as well as the cost of a separate submount.

Another advantage is in enabling most of the device fabrication steps tobe carried out on die transferred to a carrier wafer. Because thecarrier wafer size is arbitrary it is possible to choose carrier sizeslarge enough to allow bonding die from multiple substrates to the samecarrier wafer such that the cost of each processing step duringfabrication of the laser devices is shared among vastly more devices,thereby reducing fabrication costs considerably. Moreover, encapsulationsteps can be carried out directly on the carrier wafer, allowing for thefabrication of environmentally sealed laser chips using parallelprocessing methods. The resulting device, either encapsulated or not,would be a laser device in a true chip-scale package.

Another advantage is that this invention transfers the epitaxialmaterial comprising the laser device from the substrate withoutdestroying the substrate, thereby allowing the substrate to be reclaimedand reused for the growth of more devices. In the case when thesubstrate can be reclaimed many times, the effective substrate costquickly approaches the cost of reclaim rather than the cost of theoriginal substrate. For devices such as GaN laser diodes, wheresubstrates are both small and expensive relative to more mature compoundsemiconductor materials, these advantages can lead to dramaticreductions in the cost of fabricating a laser device.

In brief, embodiments of the invention involve an optoelectronic devicewafer composed of device layers overlying the surface region of asubstrate wafer. The substrate material can be GaN, sapphire, SiC, Si,and GaAs, but can be others. The optoelectronic device layers areseparated from the substrate by one or more layers designed to beselectively removable either by dry etching, wet etching ordecomposition due to laser irradiation. A bonding material is depositedon the surface of the optoelectronic device layers. A bonding materialis also deposited either as a blanket coating or patterned on a carrierwafer. Standard lithographic processes are used to mask the device waferwhich is then etched with either dry or wet etch processes to open viasthat expose the sacrificial layer. A selective etch process is used toremove the sacrificial layer while leaving the optoelectronic devicelayers intact. In the case where the selective removal process is a wetetch, a protective passivation layer can be employed to prevent thedevice layers from being exposed to the etch when the etch selectivityis not perfect. The selective removal undercuts the device layers.

In an embodiment, the device layers comprise a super-luminescent lightemitting diode or SLED. A SLED is in many ways similar to an edgeemitting laser diode; however the emitting facet of the device isdesigned so as to have a very low reflectivity. A SLED is similar to alaser diode as it is based on an electrically driven junction that wheninjected with current becomes optically active and generates amplifiedspontaneous emission (ASE) and gain over a wide range of wavelengths.When the optical output becomes dominated by ASE there is a knee in thelight output versus current (LI) characteristic wherein the unit oflight output becomes drastically larger per unit of injected current.This knee in the LI curve resembles the threshold of a laser diode, butis much softer. A SLED would have a layer structure engineered to have alight emitting layer or layers clad above and below with material oflower optical index such that a laterally guided optical mode can beformed. The SLED would also be fabricated with features providinglateral optical confinement. These lateral confinement features mayconsist of an etched ridge, with air, vacuum, metal or dielectricmaterial surrounding the ridge and providing a low optical-indexcladding. The lateral confinement feature may also be provided byshaping one or more of the electrical contacts such that injectedcurrent is confined to a finite region in the device. In such a “gainguided” structure, dispersion in the optical index of the light emittinglayer with injected carrier density provides the optical-index contrastneeded to provide lateral confinement of the optical mode. The emissionspectral width is typically substantially wider (>5 nm) than that of alaser diode and offer advantages with respect to reduced imagedistortion in displays, increased eye safety, and enhanced capability inmeasurement and spectroscopy applications.

SLEDs are designed to have high single pass gain or amplification forthe spontaneous emission generated along the waveguide. The SLED devicewould also be engineered to have a low internal loss, preferably below 1cm-1, however SLEDs can operate with internal losses higher than this.In the ideal case, the emitting facet reflectivity would be zero,however in practical applications a reflectivity of zero is difficult toachieve and the emitting facet reflectivity is designs to be less than1%, less than 0.1%, less than 0.001%, or less than 0.0001% reflectivity.Reducing the emitting facet reflectivity reduces feedback into thedevice cavity, thereby increasing the injected current density at whichthe device will begin to lase. Very low reflectivity emitting facets canbe achieved by a combination of addition of anti-reflection coatings andby angling the emitting facet relative to the SLED cavity such that thesurface normal of the facet and the propagation direction of the guidedmodes are substantially non-parallel. In general, this would mean adeviation of more than 1-2 degrees. In practice, the ideal angle dependsin part on the anti-reflection coating used and the tilt angle must becarefully designed around a null in the reflectivity versus anglerelationship for optimum performance. Tilting of the facet with respectto the propagation direction of the guided modes can be done in anydirection relative to the direction of propagation of the guided modes,though some directions may be easier to fabricate depending on themethod of facet formation. Etched facets provide high flexibility forfacet angle determination. Alternatively, a very common method toachieve an angled output for reduced constructive interference in thecavity would to curve and/or angle the waveguide with respect to acleaved facet that forms on a pre-determined crystallographic plane inthe semiconductor chip. In this configuration the angle of lightpropagation is off-normal at a specified angle designed for lowreflectivity to the cleaved facet. A low reflectivity facet may also beformed by roughening the emitting facet in such a way that lightextraction is enhanced and coupling of reflected light back into theguided modes is limited. SLEDs are applicable to all embodimentsaccording to the present invention and the device can be usedinterchangeably with laser diode device when applicable.

Special features of the mask may be used which attach to the undercutdevice layers, but which are too large to themselves be undercut, orwhich due to the design of the mask contain regions where thesacrificial layers are not removed or these features may be composed ofmetals or dielectrics that are resistant to the etch. These features actas anchors, preventing the undercut device layers from detaching fromthe substrate. This partial attachment to the substrate can also beachieved by incompletely removing the sacrificial layer, such that thereis a tenuous connection between the undercut device layers and thesubstrate which can be broken during bonding. The surfaces of thebonding material on the carrier wafer and the device wafer are thenbrought into contact and a bond is formed which is stronger than theattachment of the undercut device layers to the anchors or remainingmaterial of the sacrificial layers. After bonding, the separation of thecarrier and device wafers transfers the device layers to the carrierwafer.

This invention enables fabrication of laser or SLED die at very highdensity on a substrate. This high density being greater than what ispractical for a laser device built using current fabrication processes.Laser die are transferred to a carrier wafer at a larger pitch (e.g.lower density) than they are found on the substrate. The carrier wafercan be made from a less expensive material, or one with materialproperties that enable using the carrier as a submount or the carrierwafer can be an engineered wafer including passivation layers andelectrical elements fabricated with standard lithographic processes.Once transferred, the die can be processed into laser devices usingstandard lithographic processes. The carrier wafer diameter can bechosen such that laser die from multiple gallium and nitrogen containingsubstrates can be transferred to a single carrier and processed intolaser devices in parallel using standard lithographic processes.

With respect to AlInGaN laser devices, these devices include a galliumand nitrogen containing substrate (e.g., GaN) comprising a surfaceregion oriented in either a semipolar [(11-21), (20-21), (20-2-1), amongothers] or non-polar [(10-10) or (11-20)] configuration, but can beothers. The device also has a gallium and nitrogen containing materialcomprising InGaN overlying the surface region. In a specific embodiment,the present laser device can be employed in either a semipolar ornon-polar gallium containing substrate, as described below. As usedherein, the term “substrate” can mean the bulk substrate or can includeoverlying growth structures such as a gallium and nitrogen containingepitaxial region, or functional regions such as n-type GaN,combinations, and the like. We have also explored epitaxial growth andcleave properties on semipolar crystal planes oriented between thenonpolar m-plane and the polar c-plane. In particular, we have grown onthe {30-31} and {20-21} families of crystal planes. We have achievedpromising epitaxy structures and cleaves that will create a path toefficient laser diodes operating at wavelengths from about 400 nm in theviolet wavelength range of 400 nm to 425 nm, to blue, e.g., 425 nm to465 nm, to cyan, e.g., 465 nm to 500 nm, to green, e.g., 500 nm to 540nm. These results include bright blue epitaxy in the 450 nm range,bright green epitaxy in the 520 nm range, and smooth cleave planesorthogonal to the projection of the c-direction.

In a specific embodiment, the gallium nitride substrate member is a bulkGaN substrate characterized by having a semipolar or non-polarcrystalline surface region, but can be others. In a specific embodiment,the bulk nitride GaN substrate comprises nitrogen and has a surfacedislocation density between about 10E5 cm⁻² and about 10E7 cm⁻² or below10E5 cm⁻². The nitride crystal or wafer may compriseAl_(x)In_(y)Ga_(1-x-y)N, where 0≦x, y, x+y≦1. In one specificembodiment, the nitride crystal comprises GaN. In one or moreembodiments, the GaN substrate has threading dislocations, at aconcentration between about 10E5 cm⁻² and about 10E8 cm⁻², in adirection that is substantially orthogonal or oblique with respect tothe surface. As a consequence of the orthogonal or oblique orientationof the dislocations, the surface dislocation density is between about10E5 cm⁻² and about 10E7 cm⁻² or below about 10E5 cm⁻². In a specificembodiment, the device can be fabricated on a slightly off-cut semipolarsubstrate as described in U.S. Ser. No. 12/749,466 filed Mar. 29, 2010,which claims priority to U.S. Provisional No. 61/164,409 filed Mar. 28,2009, which are commonly assigned and hereby incorporated by referenceherein.

The substrate typically is provided with one or more of the followingepitaxially grown elements, but is not limiting:

-   -   an n-GaN cladding region with a thickness of about 50 nm to        about 6000 nm with a Si or oxygen doping level of about 5E16        cm⁻³ to about 1E19 cm⁻³    -   an InGaN region of a high indium content and/or thick InGaN        layer(s) or Super SCH region;    -   a higher bandgap strain control region overlying the InGaN        region;    -   optionally, an SCH region overlying the InGaN region;    -   multiple quantum well active region layers comprised of three to        five or four to six about 3.0-5.5.0 nm InGaN quantum wells        separated by about 1.5-10.0 nm GaN barriers    -   optionally, a p-side SCH layer comprised of InGaN with molar a        fraction of indium of between about 1% and about 10% and a        thickness from about 15 nm to about 100 nm    -   an electron blocking layer comprised of AlGaN with molar        fraction of aluminum of between about 5% and about 20% and        thickness from about 10 nm to about 15 nm and doped with Mg.    -   a p-GaN cladding layer with a thickness from about 400 nm to        about 1000 nm with Mg doping level of about 5E17 cm⁻³ to about        1E19 cm⁻³    -   a p++-GaN contact layer with a thickness from about 20 nm to        about 40 nm with Mg doping level of about 1E20 cm⁻³ to about        1E21 cm⁻³

Typically each of these regions is formed using at least an epitaxialdeposition technique of metal organic chemical vapor deposition (MOCVD),molecular beam epitaxy (MBE), or other epitaxial growth techniquessuitable for GaN growth. The active region can include one to abouttwenty quantum well regions according to one or more embodiments. As anexample following deposition of the n-type Al_(u)In_(v)Ga_(1-u-v)N layerfor a predetermined period of time, so as to achieve a predeterminedthickness, an active layer is deposited. The active layer may comprise asingle quantum well or a multiple quantum well, with about 2-10 quantumwells. The quantum wells may comprise InGaN wells and GaN barrierlayers. In other embodiments, the well layers and barrier layerscomprise Al_(w)In_(x)Ga_(1-w-x)N and Al_(y)In_(z)Ga_(1-y-z)N,respectively, where 0≦w, x, y, z, w+x, y+z≦1, where w<u, y and/or x>v, zso that the bandgap of the well layer(s) is less than that of thebarrier layer(s) and the n-type layer. The well layers and barrierlayers may each have a thickness between about 1 nm and about 15 nm. Inanother embodiment, the active layer comprises a double heterostructure,with an InGaN or AlwInxGa1-w-xN layer about 10 nm to about 100 nm thicksurrounded by GaN or Al_(y)In_(z)Ga_(1-y-z)N layers, where w<u, y and/orx>v, z. The composition and structure of the active layer are chosen toprovide light emission at a preselected wavelength. The active layer maybe left undoped (or unintentionally doped) or may be doped n-type orp-type.

The active region can also include an electron blocking region, and aseparate confinement heterostructure. In some embodiments, an electronblocking layer is preferably deposited. The electron-blocking layer maycomprise Al_(s)In_(t)Ga_(1-s-t)N, where 0≦s, t, s+t≦1, with a higherbandgap than the active layer, and may be doped p-type or the electronblocking layer comprises an AlGaN/GaN super-lattice structure,comprising alternating layers of AlGaN and GaN. Alternatively, there maybe no electron blocking layer. As noted, the p-type gallium nitridestructure, is deposited above the electron blocking layer and activelayer(s). The p-type layer may be doped with Mg, to a level betweenabout 10E16 cm-3 and about 10E22 cm-3, and may have a thickness betweenabout 5 nm and about 1000 nm. The outermost 1-50 nm of the p-type layermay be doped more heavily than the rest of the layer, so as to enable animproved electrical contact.

FIG. 4 is a simplified schematic cross-sectional diagram illustrating astate of the art GaN laser diode structure. This diagram is merely anexample, which should not unduly limit the scope of the claims herein.One of ordinary skill in the art would recognize other variations,modifications, and alternatives in light of the present disclosure. Asshown, the laser device includes gallium nitride substrate 203, whichhas an underlying n-type metal back contact region 201. In anembodiment, the metal back contact region is made of a suitable materialsuch as those noted below and others. Further details of the contactregion can be found throughout the present specification and moreparticularly below.

In an embodiment, the device also has an overlying n-type galliumnitride layer 205, an active region 207, and an overlying p-type galliumnitride layer structured as a laser stripe region 211. Additionally, thedevice also includes an n-side separate confinement heterostructure(SCH) 206, p-side guiding layer or SCH 208, p-AlGaN EBL 209, among otherfeatures. In an embodiment, the device also has a p++ type galliumnitride material 213 to form a contact region. In an embodiment, the p++type contact region has a suitable thickness and may range from about 10nm to about 50 nm, or other thicknesses. In an embodiment, the dopinglevel can be higher than the p-type cladding region and/or bulk region.In an embodiment, the p++ type region has doping concentration rangingfrom about 10¹⁹ to 10²¹ Mg/cm³, and others. The p++ type regionpreferably causes tunneling between the semiconductor region andoverlying metal contact region. In an embodiment, each of these regionsis formed using at least an epitaxial deposition technique of metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE),or other epitaxial growth techniques suitable for GaN growth. In anembodiment, the epitaxial layer is a high quality epitaxial layeroverlying the n-type gallium nitride layer. In some embodiments the highquality layer is doped, for example, with Si or O to form n-typematerial, with a dopant concentration between about 10¹⁶ cm⁻³ and about10²⁰ cm⁻³.

The device has a laser stripe region formed overlying a portion of theoff-cut crystalline orientation surface region. As example, FIG. 3 is ais a simplified schematic diagram of semipolar laser diode with thecavity aligned in the projection of c-direction with cleaved or etchedmirrors. The laser stripe region is characterized by a cavityorientation substantially in a projection of a c-direction, which issubstantially normal to an a-direction. The laser strip region has afirst end 107 and a second end 109 and is formed on a projection of ac-direction on a {20-21} gallium and nitrogen containing substratehaving a pair of cleaved mirror structures, which face each other. Thefirst cleaved facet comprises a reflective coating and the secondcleaved facet comprises no coating, an antireflective coating, orexposes gallium and nitrogen containing material. The first cleavedfacet is substantially parallel with the second cleaved facet. The firstand second cleaved facets are provided by a scribing and breakingprocess according to an embodiment or alternatively by etchingtechniques using etching technologies such as reactive ion etching (ME),inductively coupled plasma etching (ICP), or chemical assisted ion beametching (CAIBE), or other method. The first and second mirror surfaceseach comprise a reflective coating. The coating is selected from silicondioxide, hafnia, and titania, tantalum pentoxide, zirconia, includingcombinations, and the like. Depending upon the design, the mirrorsurfaces can also comprise an anti-reflective coating.

In a specific embodiment, the method of facet formation includessubjecting the substrates to a laser for pattern formation. In apreferred embodiment, the pattern is configured for the formation of apair of facets for one or more ridge lasers. In a preferred embodiment,the pair of facets face each other and are in parallel alignment witheach other. In a preferred embodiment, the method uses a UV (355 nm)laser to scribe the laser bars. In a specific embodiment, the laser isconfigured on a system, which allows for accurate scribe linesconfigured in one or more different patterns and profiles. In one ormore embodiments, the laser scribing can be performed on the back-side,front-side, or both depending upon the application. Of course, there canbe other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside laser scribing or thelike. With backside laser scribing, the method preferably forms acontinuous line laser scribe that is perpendicular to the laser bars onthe backside of the GaN substrate. In a specific embodiment, the laserscribe is generally about 15-20 um deep or other suitable depth.Preferably, backside scribing can be advantageous. That is, the laserscribe process does not depend on the pitch of the laser bars or otherlike pattern. Accordingly, backside laser scribing can lead to a higherdensity of laser bars on each substrate according to a preferredembodiment. In a specific embodiment, backside laser scribing, however,may lead to residue from the tape on one or more of the facets. In aspecific embodiment, backside laser scribe often requires that thesubstrates face down on the tape. With front-side laser scribing, thebackside of the substrate is in contact with the tape. Of course, therecan be other variations, modifications, and alternatives.

Laser scribe Pattern: The pitch of the laser mask is about 200 um, butcan be others. In an embodiment the method uses a 170 um scribe with a30 um dash for the 200 um pitch. In a preferred embodiment, the scribelength is maximized or increased while maintaining the heat affectedzone of the laser away from the laser ridge, which is sensitive to heat.

Laser scribe Profile: A saw tooth profile generally produces minimalfacet roughness. It is believed that the saw tooth profile shape createsa very high stress concentration in the material, which causes thecleave to propagate much easier and/or more efficiently.

In a specific embodiment, the method of facet formation includessubjecting the substrates to mechanical scribing for pattern formation.In a preferred embodiment, the pattern is configured for the formationof a pair of facets for one or more ridge lasers. In a preferredembodiment, the pair of facets face each other and are in parallelalignment with each other. In a preferred embodiment, the method uses adiamond tipped scribe to physically scribe the laser bars, though aswould be obvious to anyone learned in the art a scribe tipped with anymaterial harder than GaN would be adequate. In a specific embodiment,the laser is configured on a system, which allows for accurate scribelines configured in one or more different patterns and profiles. In oneor more embodiments, the mechanical scribing can be performed on theback-side, front-side, or both depending upon the application. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside scribing or the like.With backside mechanical scribing, the method preferably forms acontinuous line scribe that is perpendicular to the laser bars on thebackside of the GaN substrate. In a specific embodiment, the laserscribe is generally about 15-20 um deep or other suitable depth.Preferably, backside scribing can be advantageous. That is, themechanical scribe process does not depend on the pitch of the laser barsor other like pattern. Accordingly, backside scribing can lead to ahigher density of laser bars on each substrate according to a preferredembodiment. In a specific embodiment, backside mechanical scribing,however, may lead to residue from the tape on one or more of the facets.In a specific embodiment, backside mechanical scribe often requires thatthe substrates face down on the tape. With front-side mechanicalscribing, the backside of the substrate is in contact with the tape. Ofcourse, there can be other variations, modifications, and alternatives.

It is well known that etch techniques such as chemical assisted ion beametching (CAIBE), inductively coupled plasma (ICP) etching, or reactiveion etching (RIE) can result in smooth and vertical etched sidewallregions, which could serve as facets in etched facet laser diodes. Inthe etched facet process a masking layer is deposited and patterned onthe surface of the wafer. The etch mask layer could be comprised ofdielectrics such as silicon dioxide (SiO2), silicon nitride (SixNy), acombination thereof or other dielectric materials. Further, the masklayer could be comprised of metal layers such as Ni or Cr, but could becomprised of metal combination stacks or stacks comprising metal anddielectrics. In another approach, photoresist masks can be used eitheralone or in combination with dielectrics and/or metals. The etch masklayer is patterned using conventional photolithography and etch steps.The alignment lithography could be performed with a contact aligner orstepper aligner. Such lithographically defined mirrors provide a highlevel of control to the design engineer. After patterning of thephotoresist mask on top of the etch mask is complete, the patterns inthen transferred to the etch mask using a wet etch or dry etchtechnique. Finally, the facet pattern is then etched into the waferusing a dry etching technique selected from CAIBE, ICP, RIE and/or othertechniques. The etched facet surfaces must be highly vertical of betweenabout 87 and about 93 degrees or between about 89 and about 91 degreesfrom the surface plane of the wafer. The etched facet surface regionmust be very smooth with root mean square roughness values of less thanabout 50 nm, 20 nm, 5 nm, or 1 nm. Lastly, the etched must besubstantially free from damage, which could act as nonradiativerecombination centers and hence reduce the COMD threshold. CAIBE isknown to provide very smooth and low damage sidewalls due to thechemical nature of the etch, while it can provide highly vertical etchesdue to the ability to tilt the wafer stage to compensate for anyinherent angle in etch.

The laser stripe is characterized by a length and width. The lengthranges from about 50 microns to about 3000 microns, but is preferablybetween about 10 microns and about 400 microns, between about 400microns and about 800 microns, or about 800 microns and about 1600microns, but could be others. The stripe also has a width ranging fromabout 0.5 microns to about 50 microns, but is preferably between about0.8 microns and about 2.5 microns for single lateral mode operation orbetween about 2.5 um and about 35 um for multi-lateral mode operation,but can be other dimensions. In a specific embodiment, the presentdevice has a width ranging from about 0.5 microns to about 1.5 microns,a width ranging from about 1.5 microns to about 3.0 microns, a widthranging from about 3.0 microns to about 35 microns, and others. In aspecific embodiment, the width is substantially constant in dimension,although there may be slight variations. The width and length are oftenformed using a masking and etching process, which are commonly used inthe art.

The laser stripe is provided by an etching process selected from dryetching or wet etching. The device also has an overlying dielectricregion, which exposes a p-type or n-type contact region. Overlying thecontact region is a contact material, which may be metal or a conductiveoxide or a combination thereof. The p-type or n-type electrical contactmay be deposited by thermal evaporation, electron beam evaporation,electroplating, sputtering, or another suitable technique. Overlying thepolished region of the substrate is a second contact material, which maybe metal or a conductive oxide or a combination thereof and whichcomprises the n-type electrical contact. The n-type electrical contactmay be deposited by thermal evaporation, electron beam evaporation,electroplating, sputtering, or another suitable technique.

Given the high gallium and nitrogen containing substrate costs,difficulty in scaling up gallium and nitrogen containing substrate size,the inefficiencies inherent in the processing of small wafers, andpotential supply limitations on polar, semi-polar, and nonpolar galliumand nitrogen containing wafers, it becomes extremely desirable tomaximize utilization of available gallium and nitrogen containingsubstrate and overlying epitaxial material. In the fabrication oflateral cavity laser diodes, it is typically the case that minimum diesize is determined by device components such as the wire bonding pads ormechanical handling considerations, rather than by laser cavity widths.Minimizing die size is critical to reducing manufacturing costs assmaller die sizes allow a greater number of devices to be fabricated ona single wafer in a single processing run. The current invention is amethod of maximizing the number of devices which can be fabricated froma given gallium and nitrogen containing substrate and overlyingepitaxial material by spreading out the epitaxial material onto acarrier wafer via a die expansion process.

With respect to AlInGaAsP laser devices, these devices include asubstrate made of GaAs or Ge, but can be others. As used herein, theterm “substrate” can mean the bulk substrate or can include overlyinggrowth structures such as arsenic or phosphorus containing epitaxialregion, or functional regions such as n-type AlGaAs, combinations, andthe like. The devices have material overlying the substrate composed ofGaAs, AlAs, AlGaAs, InGaAS, InGaP, AlInGaP, AlInGaAs or AlInGaAsP.Typically each of these regions is formed using at least an epitaxialdeposition technique of metal organic chemical vapor deposition (MOCVD),molecular beam epitaxy (MBE), or other epitaxial growth techniquessuitable for AlInGaAsP growth. In general these devices have an n-typeand p-type conducting layer which may form part of a n-type claddinglayer or p-type cladding layer, respectively, with lower refractiveindex than the light emitting active region. The n-cladding layers canbe composed of an alloy of AlInGaAsP containing aluminum. The devicescontain an active region which emits light during operation of thedevice. The active region may have one or more quantum wells of lowerbandgap than surrounding quantum barriers. Separate confinementheterostructures (SCHs) may be included with refractive index higherthan the cladding layers to improve confinement of the optical modes.SCHs and quantum wells are typically composed of InGaP, AlInGaP orInGaAsP, but may be other materials.

The device has a laser stripe region formed overlying a portion ofsurface region. The laser strip region has a first end and a second end,having a pair of cleaved mirror structures, which face each other. Thefirst cleaved facet comprises a reflective coating and the secondcleaved facet comprises no coating, an antireflective coating, orexposes As or P containing material. The first cleaved facet issubstantially parallel with the second cleaved facet. The first andsecond cleaved facets are provided by a scribing and breaking processaccording to an embodiment or alternatively by etching techniques usingetching technologies such as reactive ion etching (ME), inductivelycoupled plasma etching (ICP), or chemical assisted ion beam etching(CAIBE), or other method. The first and second mirror surfaces eachcomprise a reflective coating. The coating is selected from silicondioxide, hafnia, and titania, tantalum pentoxide, zirconia, includingcombinations, and the like. Depending upon the design, the mirrorsurfaces can also comprise an anti-reflective coating.

In a specific embodiment, the method of facet formation includessubjecting the substrates to a laser for pattern formation. In apreferred embodiment, the pattern is configured for the formation of apair of facets for one or more ridge lasers. In a preferred embodiment,the pair of facets face each other and are in parallel alignment witheach other. In a preferred embodiment, the method uses a UV (355 nm)laser to scribe the laser bars. In a specific embodiment, the laser isconfigured on a system, which allows for accurate scribe linesconfigured in one or more different patterns and profiles. In one ormore embodiments, the laser scribing can be performed on the back-side,front-side, or both depending upon the application. Of course, there canbe other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside laser scribing or thelike. With backside laser scribing, the method preferably forms acontinuous line laser scribe that is perpendicular to the laser bars onthe backside of the substrate. In a specific embodiment, the laserscribe is generally about 15-20 um deep or other suitable depth.Preferably, backside scribing can be advantageous. That is, the laserscribe process does not depend on the pitch of the laser bars or otherlike pattern. Accordingly, backside laser scribing can lead to a higherdensity of laser bars on each substrate according to a preferredembodiment. In a specific embodiment, backside laser scribing, however,may lead to residue from the tape on one or more of the facets. In aspecific embodiment, backside laser scribe often requires that thesubstrates face down on the tape. With front-side laser scribing, thebackside of the substrate is in contact with the tape. Of course, therecan be other variations, modifications, and alternatives.

In a specific embodiment, the method of facet formation includessubjecting the substrates to mechanical scribing for pattern formation.In a preferred embodiment, the pattern is configured for the formationof a pair of facets for one or more ridge lasers. In a preferredembodiment, the pair of facets face each other and are in parallelalignment with each other. In a preferred embodiment, the method uses adiamond tipped scribe to physically scribe the laser bars, though aswould be obvious to anyone learned in the art a scribe tipped with anymaterial harder than GaN would be adequate. In a specific embodiment,the laser is configured on a system, which allows for accurate scribelines configured in one or more different patterns and profiles. In oneor more embodiments, the mechanical scribing can be performed on theback-side, front-side, or both depending upon the application. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside scribing or the like.With backside mechanical scribing, the method preferably forms acontinuous line scribe that is perpendicular to the laser bars on thebackside of the substrate. In a specific embodiment, the laser scribe isgenerally about 15-20 um deep or other suitable depth. Preferably,backside scribing can be advantageous. That is, the mechanical scribeprocess does not depend on the pitch of the laser bars or other likepattern. Accordingly, backside scribing can lead to a higher density oflaser bars on each substrate according to a preferred embodiment. In aspecific embodiment, backside mechanical scribing, however, may lead toresidue from the tape on one or more of the facets. In a specificembodiment, backside mechanical scribe often requires that thesubstrates face down on the tape. With front-side mechanical scribing,the backside of the substrate is in contact with the tape. Of course,there can be other variations, modifications, and alternatives.

It is well known that etch techniques such as chemical assisted ion beametching (CAIBE), inductively coupled plasma (ICP) etching, or reactiveion etching (RIE) can result in smooth and vertical etched sidewallregions, which could serve as facets in etched facet laser diodes. Inthe etched facet process a masking layer is deposited and patterned onthe surface of the wafer. The etch mask layer could be comprised ofdielectrics such as silicon dioxide (SiO2), silicon nitride (SixNy), acombination thereof or other dielectric materials. Further, the masklayer could be comprised of metal layers such as Ni or Cr, but could becomprised of metal combination stacks or stacks comprising metal anddielectrics. In another approach, photoresist masks can be used eitheralone or in combination with dielectrics and/or metals. The etch masklayer is patterned using conventional photolithography and etch steps.The alignment lithography could be performed with a contact aligner orstepper aligner. Such lithographically defined mirrors provide a highlevel of control to the design engineer. After patterning of thephotoresist mask on top of the etch mask is complete, the patterns inthen transferred to the etch mask using a wet etch or dry etchtechnique. Finally, the facet pattern is then etched into the waferusing a dry etching technique selected from CAIBE, ICP, RIE and/or othertechniques. The etched facet surfaces must be highly vertical of betweenabout 87 and about 93 degrees or between about 89 and about 91 degreesfrom the surface plane of the wafer. The etched facet surface regionmust be very smooth with root mean square roughness values of less thanabout 50 nm, 20 nm, 5 nm, or 1 nm. Lastly, the etched must besubstantially free from damage, which could act as nonradiativerecombination centers and hence reduce the COMD threshold. CAIBE isknown to provide very smooth and low damage sidewalls due to thechemical nature of the etch, while it can provide highly vertical etchesdue to the ability to tilt the wafer stage to compensate for anyinherent angle in etch.

The laser stripe is characterized by a length and width. The lengthranges from about 50 microns to about 3000 microns, but is preferablybetween about 10 microns and about 400 microns, between about 400microns and about 800 microns, or about 800 microns and about 1600microns, but could be others. The stripe also has a width ranging fromabout 0.5 microns to about 50 microns, but is preferably between about0.8 microns and about 2.5 microns for single lateral mode operation orbetween about 2.5 um and about 35 um for multi-lateral mode operation,but can be other dimensions. In a specific embodiment, the width issubstantially constant in dimension, although there may be slightvariations. The width and length are often formed using a masking andetching process, which are commonly used in the art.

The laser stripe is provided by an etching process selected from dryetching or wet etching. The device also has an overlying dielectricregion, which exposes a p-type contact region. Overlying the contactregion is a contact material, which may be metal or a conductive oxideor a combination thereof. The p-type electrical contact may be depositedby thermal evaporation, electron beam evaporation, electroplating,sputtering, or another suitable technique. Overlying the polished regionof the substrate is a second contact material, which may be metal or aconductive oxide or a combination thereof and which comprises the n-typeelectrical contact. The n-type electrical contact may be deposited bythermal evaporation, electron beam evaporation, electroplating,sputtering, or another suitable technique.

This invention requires selective removal of one or more of theepitaxial layers to allow lift-off of the laser device layers. All ofthe epitaxial layers in the typical device structures described aboveare typically of use in the final device such that none may be removedfrom the structure. A sacrificial layer in most cases must be added tothe epitaxial structure. This layer is one that has the properties of a)can be etched selectively relative to the adjacent layers in theepitaxial structure, b) can be grown in such a way that it does notinduce defects in the device layers that negatively impact performanceand c) can be grown between the functional device layers and thesubstrate such that selective removal of the sacrificial layer willresult in undercutting of the device layers. In some embodiments thesacrificial layer will be a layer that would be normally found in theepitaxial structure. For example, when using laser lift-off toselectively remove material in an optoelectronic device grown onsapphire, the sacrificial layer might be the nitride material adjacentto the sapphire epitaxial surface. In some embodiments the sacrificiallayer might be produced by selectively modifying a portion of a layernormally found in the device. For example, one might induce a n-type GaNlayer to be selectively etchable at a specific depth via awell-controlled ion implantation process.

One embodiment for the fabrication of undercut GaN based laser diodes isdepicted in FIG. 6. This embodiment uses a bandgap selectivephoto-electrical chemical (PEC) etch to undercut an array of mesasetched into the epitaxial layers. The preparation of the epitaxy waferis shown in FIG. 6. This process requires the inclusion of a buriedsacrificial region, which can be PEC etched selectively by bandgap. ForGaN based optoelectronic devices, InGaN quantum wells have been shown tobe an effective sacrificial region during PEC etching.^(1,2) The firststep depicted in FIG. 6 is a top down etch to expose the sacrificiallayers, followed by a bonding metal deposition as shown in FIG. 6. Withthe sacrificial region exposed a bandgap selective PEC etch is used toundercut the mesas. In one embodiment, the bandgaps of the sacrificialregion and all other layers are chosen such that only the sacrificialregion will absorb light, and therefor etch, during the PEC etch.Another embodiment of the invention uses a sacrificial region with ahigher bandgap than the active region such that both layers areabsorbing during the bandgap PEC etching process. In this embodiment,the active region can be prevented from etching during the bandgapselective PEC etch using an insulating protective layer on the sidewall,as shown in FIG. 8. The first step depicted in FIG. 8 is an etch toexpose the active region of the device. This step is followed by thedeposition of a protective insulating layer on the mesa sidewalls, whichserves to block PEC etching of the active region during the latersacrificial region undercut PEC etching step. A second top down etch isthen performed to expose the sacrificial layers and bonding metal isdeposited as shown in FIG. 8. With the sacrificial region exposed abandgap selective PEC etch is used to undercut the mesas. At this point,the selective area bonding process shown in FIG. 7 is used to continuefabricating devices. In another embodiment the active region is exposedby the dry etch and the active region and sacrificial regions bothabsorb the pump light. A conductive path is fabricated between thep-type and n-type cladding surrounding the active region. As in a solarcell, carriers are swept from the active region due to the electricfield in the depletion region. By electrically connecting the n-type andp-type layers together holes can be continually swept from the activeregion, slowing or preventing PEC etching.

Etching in the PEC process is achieved by the dissolution of AlInGaNmaterials at the wafer surface when holes are transferred to the etchingsolution. These holes are then recombined in the solution with electronsextracted at the cathode metal interface with the etching solution.Charge neutrality is therefore preserved. Sacrificial layers enablingthe release of the epitaxial device layers via PEC etching wouldincorporate at a minimum a low-bandgap or doped layer that would absorbthe pump light and have enhanced etch rate relative to the surroundingmaterial. The sacrificial layer can be deposited epitaxially and thealloy composition and doping of these release layers can be selectedsuch that hole carrier lifetime and diffusion lengths are high. Defectsthat reduce hole carrier lifetimes and diffusion length must can beavoided by growing the sacrificial layers under growth conditions thatpromote high material crystalline quality. An example of a sacrificiallayer would be an InGaN layer that is absorbing at the wavelength of anexternal light source. Etch stop layers may clad the sacrificial releaselayer on one or both sides to limit the inadvertent etching of materialsurrounding the release layer. The etch properties of the etch stoplayer can be controlled solely by or a combination of alloy compositionand doping. A potential etch stop layer would an AlGaN or GaN layer witha bandgap higher than the external light source, such that carriers arenot generated in this layer under illumination by the external lightsource. Wider bandgap materials may also prevent holes from escapingfrom the lower band-gap release layers leading to unintentional etchingof the surrounding cladding material. Another potential etch stop layeris a highly doped n-type AlGaN or GaN layer with reduce minority carrierdiffusion lengths and lifetime thereby dramatically reducing the etchrate of the etch stop material. In this invention, it is typical thatthe release layer and the light emitting layers are both exposed to theetch solution at the edges of the die. Selective etching of the releaselayer can be achieved by choosing the bandgap of the light emittinglayers to be higher than both the release layer and the photon energy ofthe external light source, such that the etch-enhancing light ispreferentially absorbed by the release layers and either not absorbed orabsorbed with lower efficiency in the light emitting layers. Another wayselective etching of the release layer is achieved is by electricallyshorting the anode to the cathode. Electron hole pairs generated in thedevice light emitting layers are swept out of the light emitting layersby the electric field of the of the p-n junction. Since holes are sweptout of the active region and the PEC etch process is moderated by holes,there is little or no etching of the light emitting layer. Just like aphotodiode operated in a short-circuit mode, the buildup of carriersproduces a potential difference that drives carriers through the metalinterconnects that short the anode and cathode whereupon the carriersrecombine. The flat band conditions in the n-type doped sacrificialregion result in a buildup of holes that result in rapid etching of thesacrificial layers. In one embodiment, the metal interconnects to shortthe anode and cathode can be used as anchor regions to mechanically holdthe gallium and nitrogen containing mesas in place prior to the bondingstep.

The relative etch rates of the sacrificial and active regions aredetermined by a number of factors, but primarily it is determined by thedensity of holes found in the active region at steady state. If themetal interconnects or anchors are very resistive, or if either thecathode or anode electrical contacts to the p-type and n-type,respectively, cladding regions are too resistive or have large Schottkybarriers then it is possible for carriers to accumulate on either sideof the p-n junction. These carriers will produce an electric field thatacts against the field in the depletion region and will reduce themagnitude of the field in the depletion region until the rate ofphoto-generated carrier drift out of the active region is balanced bythe recombination rate of carriers via the metal layers shorting thecathode and anode. Some recombination will take place via photochemicaletching, and since this scales with the density of holes in the activeregion it is preferable to prevent the buildup of a photo-induced biasacross the active region.

Undercut AlInGaAsP based laser diodes can be produced in a mannersimilar to GaN based laser diodes. There are a number of wet etches thatetch some AlInGaAsP alloys selectively.⁷ In one embodiment, an AlGaAs orAlGaP sacrificial layer could be grown clad with GaAs etch stop layers.When the composition of Al_(x)Ga_(1-x)As and Al_(x)Ga_(1-x)P is high(x>0.5) AlGaAs can be etched with almost complete selectivity (i.e. etchrate of AlGaAs>1E6 times that of GaAs) when etched with HF. InGaP andAlInP with high InP and AlP compositions can be etched with HClselectively relative to GaAs. GaAs can be etched selectively relative toAlGaAs using C₆H₈O₇:H₂O₂:H₂O. There are a number of other combinationsof sacrificial layer, etch-stop layer and etch chemistry which arewidely known to those knowledgeable in the art of micromachiningAlInGaAsP alloys.

In one embodiment, the AlInGaAsP device layers are exposed to the etchsolution which is chosen along with the sacrificial layer compositionsuch that only the sacrificial layers experience significant etching.The active region can be prevented from etching during thecompositionally selective etch using an etch resistant protective layer,such as like silicon dioxide, silicon nitride, metals or photoresistamong others, on the sidewall, as shown in FIG. 8. The first stepdepicted in FIG. 8 is an etch to expose the active region of the device.This step is followed by the deposition of a protective insulating layeron the mesa sidewalls, which serves to block etching of the activeregion during the later sacrificial region undercut etching step. Asecond top down etch is then performed to expose the sacrificial layersand bonding metal is deposited as shown in FIG. 8. With the sacrificialregion exposed a compositionally selective etch is used to undercut themesas. At this point, the selective area bonding process shown in FIG. 7is used to continue fabricating devices. The device layers should beseparated from the sacrificial layers by a layer of material that isresistant to etching. This is to prevent etching into the device layersafter partially removing the sacrificial layers.

A top down view of one preferred embodiment of the die expansion processis depicted in FIG. 5. The starting materials are patterned epitaxy andcarrier wafers. Herein, the ‘epitaxy wafer’ or ‘epitaxial wafer’ or‘donor wafer’ is defined as the original gallium and nitrogen containingwafer on which the epitaxial material making up the active region wasgrown, while the ‘carrier wafer’ is defined as a wafer to whichepitaxial layers are transferred for convenience of processing. Thecarrier wafer can be chosen based on any number of criteria includingbut not limited to cost, thermal conductivity, thermal expansioncoefficients, size, electrical conductivity, optical properties, andprocessing compatibility. The patterned epitaxy wafer is prepared insuch a way as to allow subsequent selective release of bonded epitaxyregions. The patterned carrier wafer is prepared such that bond pads arearranged in order to enable the selective area bonding process. Thesewafers can be prepared by a variety of process flows, some embodimentsof which are described below. In the first selective area bond step, theepitaxy wafer is aligned with the pre-patterned bonding pads on thecarrier wafer and a combination of pressure, heat, and/or sonication isused to bond the mesas to the bonding pads. The bonding material can bea variety of media including but not limited to metals, polymers, waxes,and oxides. Only epitaxial die which are in contact with a bond bad onthe carrier wafer will bond. Sub-micron alignment tolerances arepossible on commercial die bonders. The epitaxy wafer is then pulledaway, breaking the epitaxy material at a weakened epitaxial releaselayer such that the desired epitaxial layers remain on the carrierwafer. Herein, a ‘selective area bonding step’ is defined as a singleiteration of this process. In the example depicted in FIG. 5, onequarter of the epitaxial die are transferred in this first selectivebond step, leaving three quarters on the epitaxy wafer. The selectivearea bonding step is then repeated to transfer the second quarter, thirdquarter, and fourth quarter of the epitaxial die to the patternedcarrier wafer. This selective area bond may be repeated any number oftimes and is not limited to the four steps depicted in FIG. 5. Theresult is an array of epitaxial die on the carrier wafer with a widerdie pitch than the original die pitch on the epitaxy wafer. The diepitch on the epitaxial wafer will be referred to as pitch 1, and the diepitch on the carrier wafer will be referred to as pitch 2, where pitch 2is greater than pitch 1. At this point standard laser diode processescan be carried out on the carrier wafer. Side profile views of devicesfabricated with state of the art methods and the methods described inthe current invention are depicted in FIG. 1 and FIGS. 2A-2B,respectively. The device structure enabled by the current invention onlycontains the relatively expensive epitaxy material where the opticalcavity requires it, and has the relatively large bonding pads and/orother device components resting on a carrier wafer. Typical dimensionsfor laser ridge widths and bonding pads are <about 30 μm and >about 100μm, respectively, allowing for three or more times improved epitaxyusage efficiency with the current invention.

In a preferred embodiment, the donor wafer or epitaxial wafer consistsof a GaN substrate overlaid by a n-type buffer layer, overlaid by aInGaN based sacrificial layer, overlaid by a n-type conducting claddinglayer overlaid by a light-emitting active region overlaid by a p-typeconducting cladding layer. Mesas are formed by a dry etch process, withthe bottoms of the mesas lying below the sacrificial layer. Metal layersare deposited on top of the mesas using standard lithographic techniquesto form the p-contact. These p-contact metal layers form a goodelectrical contact to the p-type cladding layer. For example, thep-contact metal might be Pd overlaid by a Ni overlaid by Au. Here the Pdis a metal with a high work function which provides an ohmic andrelatively low resistance electrical contact to the p-type GaN. The Tipromotes good adhesion as well as acts as a diffusion barrier preventingPd and Au intermixing at elevated temperatures. The Au acts as a currentspreading layer as well as a providing a non-reactive,oxidation-resistant metallic surface on which more metals may bedeposited with good adhesion and electrical contact after subsequentprocessing. Other preferred p-contact metals include Ni, Ag and Pt, withthicknesses ranging from 0.5 nm to 100 nm, though thicker contact layersmay be used. Other preferred adhesion or diffusion barrier layer wouldbe Ti, Cr, W, Ir, Pt, Ti/W alloys and Mo, with the adhesion or diffusionbarrier layer ranging in thickness from 20 to 500 nm, though thickerlayers may be used and may be preferred if subsequent processtemperatures are greater than 300° C. or otherwise high enough topromote significant intermixing of metal layers. In a preferredalternative embodiment the barrier metals may be comprised of a Ti/Ptlayer stack wherein the Pt makes very effective barrier layer to the Audiffusion into contact metal and the Ti separates the Pt from the Pd.Preferred Au thickness is 20-200 nm, though thicker and thinner layerscould be used. In some embodiments an indium tin oxide [ITO] is used asthe p-contact material. A second metal stack comprised of, 50 nm of Tioverlaid by 1000 nm of Au, is deposited and patterned using standardlithographic techniques. The second metal stack overlays both the topsof the mesas and the bottom of the etched trenches while exposing themajority of the mesa side-walls. In one or more places on each mesa theregions of the second metal stack overlaying the tops of the mesas andbottoms of the trenches are connected by a region of the second metalstack overlaying the sidewall of the mesas. This second metal stackserves three purposes: firstly as the bond-media for the transfer ofmesas, secondly as the cathode metal to enhance the PEC etch rate of thesacrificial layer and lastly as the PEC etch resistant anchors thatprevent the undercut mesas from detaching from the substrate wafer andfrom shifting laterally. The Ti in the second metal stack serves as anadhesion promoting layer. The thick Au layer is the bond medium for theAu—Au thermocompressive bonding that transfers the mesas to the carrierwafer. The dry etch to define the shape of the device die as well asexpose the sacrificial layer can be carried out either before thep-contact metal stack is deposited or after the p-contact metal stack isdeposited but before the deposition of the second metal stack.

In a particular embodiment, the cathode metal stack also includes metallayers intended to increase the strength of the metal anchors. Forexample the cathode metal stack might consist of 100 nm of Ti to promoteadhesion of the cathode metal stack and provide a good electricalcontact to the n-type cladding. The cathode metal stack could thenincorporate a layer of tungsten, which has an elastic modulus on theorder of four times higher than gold. Incorporating the tungsten wouldreduce the thickness of gold required to provide enough mechanicalsupport to retain the mesas after they are undercut by the selectiveetch.

In an embodiment, the p-contact metal is deposited as a stack of layersof differing composition and subsequently annealed at elevatedtemperature before the second metal stack is deposited. For example, thep-contact metal stack may be 5-20 nm of Ni capped with 5-200 nm of Au.Annealing the Ni/Au at temperatures above 450 C cause the layers toalloy, which has been found to form a lower resistance contact to p-typeGaN than the as deposited Ni/Au contact. Another example is using atransparent conductive oxide (TCO) such as ITO as a p-contact since TCOdeposition processes often incorporate a post-deposition anneal toimprove transparency and contact properties.

Gold-gold metallic bonding is used as an example in this work, althougha wide variety of oxide bonds, polymer bonds, wax bonds etc. arepotentially suitable. Submicron alignment tolerances are possible usingcommercial available die bonding equipment. The carrier wafer ispatterned in such a way that only selected mesas come in contact withthe metallic bond pads on the carrier wafer. When the epitaxy substrateis pulled away the bonded mesas break off at the weakened sacrificialregion, while the un-bonded mesas remain attached to the epitaxysubstrate. This selective area bonding process can then be repeated totransfer the remaining mesas in the desired configuration. This processcan be repeated through any number of iterations and is not limited tothe two iterations depicted in FIG. 7. The carrier wafer can be of anysize, including but not limited to about 2 inch, 3 inch, 4 inch, 6 inch,8 inch, and 12 inch. After all desired mesas have been transferred, asecond bandgap selective PEC etch can be optionally used to remove anyremaining sacrificial region material to yield smooth surfaces. At thispoint standard laser diode processes can be carried out on the carrierwafer. Another embodiment of the invention incorporates the fabricationof device components on the dense epitaxy wafers before the selectivearea bonding steps. In the embodiment depicted in FIG. 9 the laserridge, sidewall passivation, and contact metal are fabricated on theoriginal epitaxial wafer before the die expansion process. This processflow is given for example purposes only and is not meant to limit whichdevice components can be processed before the die expansion process.This work flow has potential cost advantages since additional steps areperformed on the higher density epitaxial wafer before the die expansionprocess. A detailed schematic of this process flow is depicted in FIG.9.

In one embodiment thermocompression bonding is used to transfer thegallium and nitrogen epitaxial semiconductor layers to the carrierwafer. In this embodiment thermocompression bonding involves bonding ofthe epitaxial semiconductor layers to the carrier wafer at elevatedtemperatures and pressures using a bonding media disposed between theepitaxial layers and handle wafer. The bonding media may be comprised ofa number of different layers, but typically contain at least one layer(the bonding layer) that is composed of a relatively ductile materialwith a high surface diffusion rate. In many cases this material iscomprised of Au, Al or Cu. The bonding stack may also include layersdisposed between the bonding layer and the epitaxial materials or handlewafer that promote adhesion. For example an Au bonding layer on a Siwafer may result in diffusion of Si to the bonding interface, whichwould reduce the bonding strength. Inclusion of a diffusion barrier suchas silicon oxide or nitride would limit this effect. Relatively thinlayers of a second material may be applied on the top surface of thebonding layer in order to promote adhesion between the bonding layersdisposed on the epitaxial material and handle. Some bonding layermaterials of lower ductility than gold (e.g. Al, Cu etc.) or which aredeposited in a way that results in a rough film (for exampleelectrolytic deposition) may require planarization or reduction inroughness via chemical or mechanical polishing before bonding, andreactive metals may require special cleaning steps to remove oxides ororganic materials that may interfere with bonding.

Thermocompressive bonding can be achieved at relatively lowtemperatures, typically below 500 degrees Celsius and above 200.Temperatures should be high enough to promote diffusion of atoms acrossthe bonding interface, but not so high as to promote unintentionalalloying of individual layers in each metal stack. Application ofpressure enhances the bond rate, and leads to some elastic and plasticdeformation of the metal stacks that brings them into better and moreuniform contact. Optimal bond temperature, time and pressure will dependon the particular bond material, the roughness of the surfaces formingthe bonding interface and the susceptibility to fracture of the handlewafer or damage to the device layers under load. In general, bondingtemperatures above 200 C are preferred for enabling good bonding whiletemperatures below 400 C are preferred for limiting intermixing oflayers of differing composition in the metal stacks.

The bonding media can also be an amorphous or glassy material bondedeither in a reflow process or anodically. In anodic bonding the media isa glass with high ion content where mass transport of material isfacilitated by the application of a large electric field. In reflowbonding the glass has a low melting point, and will form contact and agood bond under moderate pressures and temperatures. All glass bonds arerelatively brittle, and require the coefficient of thermal expansion ofthe glass to be sufficiently close to the bonding partner wafers (i.e.the GaN wafer and the handle). Glasses in both cases could be depositedvia vapor deposition or with a process involving spin on glass. In bothcases the bonding areas could be limited in extent and with geometrydefined by lithography or silk-screening process.

In a preferred embodiment of this invention, the bonding process isperformed after the selective etching of the sacrificial region. Acritical challenge of the “etch then bond” embodiment is mechanicallysupporting the undercut epitaxial device layer mesa region fromspatially shifting prior to the bonding step. If the mesas shiftlaterally, then the ability to accurately align and arrange them to thecarrier wafer will be compromised, and hence the ability to manufacturewith acceptable yields. Mechanically fixing the mesa regions in placeprior to bonding can be achieved in several ways. In a preferredembodiment anchor regions are used to mechanically attach the mesas tothe gallium and nitrogen containing substrate prior to the bonding stepwherein the anchors are broken and the bonded mesas are released fromthe gallium and nitrogen containing substrate and transferred to thecarrier wafer.

In another preferred embodiment of the invention the gallium andnitrogen epitaxial material will be grown on a gallium and nitrogencontaining substrate material of one of the following orientations:m-plane, {50-51}, {30-31}, {20-21}, {30-32}, {50-5-1}, {30-3-1},{20-2-1}, {30-3-2}, or offcuts of these planes within about +/−5 degreestowards a-plane and/or c-plane

In another embodiment of the invention individual PEC undercut etchesare used after each selective bonding step for etching away thesacrificial release layer of only bonded mesas. Which epitaxial die getundercut is controlled by only etching down to expose the sacrificiallayer of mesas which are to be removed on the current selective bondingstep. The advantage of this embodiment is that only a very coarsecontrol of PEC etch rates is required. This comes at the cost ofadditional processing steps and geometry constrains.

In another embodiment of the invention the bonding layers can be avariety of bonding pairs including metal-metal, oxide-oxide, solderingalloys, photoresists, polymers, wax, etc.

In another embodiment of the invention the sacrificial region iscompletely removed by PEC etching and the mesa remains anchored in placeby any remaining defect pillars. PEC etching is known to leave intactmaterial around defects which act as recombination centers.^(2,3)Additional mechanisms by which a mesa could remain in place after acomplete sacrificial etch include static forces or Van der Waals forces.In one embodiment the undercutting process is controlled such that thesacrificial layer is not fully removed. The remaining thin strip ofmaterial anchors the device layers to the substrate as shown in FIG. 7.

In another embodiment of the invention a shaped sacrificial regionexpose mesa is etched to leave larger regions (anchors) near the ends ofeach epitaxy die. Bonding metal is placed only on the regions of epitaxythat are to be transferred. A selective etch is then performed such thatthe epitaxy die to be transferred is completely undercut while thelarger regions near the end are only partially undercut. The intactsacrificial regions at the ends of the die provide mechanical stabilitythrough the selective area bonding step. As only a few nanometers ofthickness will be undercut, this geometry should be compatible withstandard bonding processes. After the selective area bonding step, theepitaxy and carrier wafers are mechanically separated, cleaving at theweak points between the bond metal and intact sacrificial regions.Example schematics of this process are depicted in FIGS. 10 and 11.After the desired number of repetitions is completed, state of the artlaser diode fabrication procedures can be applied to the die expandedcarrier wafer.

In another embodiment the anchors are positioned either at the ends orsides of the undercut die such that they are connected by a narrowundercut region of material. FIG. 10 shows this configuration as the“peninsular” anchor. The narrow connecting material 304 is far from thebond metal and is design such that the undercut material cleaves at theconnecting material rather than across the die. This has the advantageof keeping the entire width of the die undamaged, which would beadvantageous. In another embodiment, geometric features are added to theconnecting material to act as stress concentrators 305 and the bondmetal is extended onto the narrow connecting material. The bond metalreinforces the bulk of the connecting material. Adding these featuresincreases the control over where the connection will cleave. Thesefeatures can be triangles, circles, rectangles or any deviation thatprovides a narrowing of the connecting material or a concave profile tothe edge of the connecting material.

In another embodiment the anchors are of small enough lateral extentthat they may be undercut, however a protective coating is used toprevent etch solution from accessing the sacrificial layers in theanchors. This embodiment is advantageous in cases when the width of thedie to be transferred is large. Unprotected anchors would need to belarger to prevent complete undercutting, which would reduce the densityof die and reduce the utilization efficiency of epitaxial material.

In another embodiment, the anchors are located at the ends of the dieand the anchors form a continuous strip of material that connects to allor a plurality of die. This configuration is advantageous since theanchors can be patterned into the material near the edge of wafers orlithographic masks where material utilization is otherwise poor. Thisallows for utilization of device material at the center of the patternto remain high even when die sizes become large.

In another embodiment the anchors are formed by depositing regions of anetch-resistant material that adheres well to the epitaxial and substratematerial. These regions overlay a portion of the laser die and someportion of the structure that will not be undercut during the etch.These regions form a continuous connection, such that after the laserdie is completely undercut they provide a mechanical support preventingthe laser die from detaching from the substrate. For example, a laserdie with a length of about 1.2 mm and a width of about 40 micrometers isetched such that the sacrificial region is exposed. Metal layers arethen deposited on the top of the laser die, the sidewall of the laserdie and the bottom of the etched region surrounding the die such that acontinuous connection is formed. The metal layers comprise of about 20nm of titanium to provide good adhesion and capped with about 500 nm ofgold. The length of laser die sidewall coated in metal is about 1 nm toabout 40 nm, with the upper thickness being less than the width of thelaser die such that the sacrificial layer is etched completely in theregion near the metal anchor where access to the sacrificial layer byetchant will be limited.

The use of metal anchors as shown have several advantages over the useof anchors made from the epitaxial device material. The first is densityof the transferable mesas on the donor wafer containing the epitaxialsemiconductor device layers and the gallium and nitrogen containing bulksubstrate. Anchors made from the epitaxial material must be large enoughto not be fully undercut by the selective etch, or they must beprotected somehow with a passivating layer. The inclusion of a largefeature that is not transferred will reduce the density of mesas in oneor more dimensions on the epitaxial device wafer. The use of metalanchors is preferable because the anchors are made from a material thatis resistant to etch and therefore can be made with small dimensionsthat do not impact mesa density. The second advantage is that itsimplifies the processing of the mesas because a separate passivatinglayer is no longer needed to isolate the active region from the etchsolution. This is possible because the metal anchors can act aselectrical connections that electrically short the active region andinhibit PEC etching. Removing the active region protecting layer reducesthe number of fabrication steps while also reducing the size of the mesarequired.

FIG. 11a is a schematic representation of electrically-conductive,non-epitaxial anchor layouts. Device layer mesas 201 are etched into thedonor wafer. The mesas are then overlaid with bond media 203. The bondmedia is comprised of a plurality of regions, with one region isolatedto the top of the device layer mesa, a second region overlays the endsof the mesa and comprises the anchor region of the mesas. Bond mediaextends over the edge of the mesa in the anchor regions. Schematicrepresentations of the cross sections A and B are shown. Cross-section Ashows a region of the mesa far from the anchors. Bond media 205 isisolated to the top of the mesas and the etched trenches. On the tops ofthe mesas, the bond media overlays the p-contact metal layers 208. Boththe active region 206 and the sacrificial layers 207 are exposed to theside of the mesa. Cross-section B shows the anchor region of the mesa.Here the bond media overlays the mesa tops as well as the trenches.Regions of bond media 209 connect the bond media on the mesa tops tothat in the trenches; acting as both anchors as well as conducting pathsfor shorting the active region.

In another embodiment of the invention, the release of the epitaxiallayers is accomplished by means other than PEC etching, such as laserlift off.

In another embodiment the anchors are fabricated from metal, siliconnitride or some other material resistant to the selective etch. Thisembodiment has the advantage over the partially undercut anchors in thatthe anchor is not undercut and therefore can be much smaller than theextent of lateral etching. This enables much denser patterning of diceon the substrate.

In an embodiment, laser device epitaxy material is fabricated into adense array of undercut mesas on a substrate containing device layers.This pattern pitch will be referred to as the ‘first pitch’. The firstpitch is often a design width that is suitable for fabricating each ofthe epitaxial regions on the substrate, while not large enough forcompleted laser devices, which often desire larger non-active regions orregions for contacts and the like. For example, these mesas would have afirst pitch ranging from about 5 microns to about 30 microns or to about50 or to about 100 or 200 microns. Each of these mesas is a ‘die’.

In an example, these die are then transferred to a carrier wafer at asecond pitch such that the second pitch on the carrier wafer is greaterthan the first pitch on the substrate. In an example, the second pitchis configured with the die to allow each die with a portion of thecarrier wafer to be a laser device, including contacts and othercomponents. For example, the second pitch would be about 100 microns toabout 200 microns or to about 300 microns but could be as large at about1-2 mm or greater in the case where a large chip is desired for ease ofhandling. For example, in the case where the carrier is used as asubmount, the second pitch should be greater than about 1 mm tofacilitate the pick and place and die-attach processes. The second diepitch allows for easy mechanical handling and room for wire bonding padspositioned in the regions of carrier wafer in-between epitaxy mesas,enabling a greater number of laser diodes to be fabricated from a givengallium and nitrogen containing substrate and overlying epitaxymaterial. Side view schematics of state of the art and die expandedlaser diodes are shown in FIG. 1 and FIGS. 2A-2B. Typical dimensions forlaser ridge widths and the widths necessary for mechanical and wirebonding considerations are from about 1 μm to about 30 μm and from about100 μm to about 300 μm, respectively, allowing for large potentialimprovements in gallium and nitrogen containing substrate and overlyingepitaxy material usage efficiency with the current invention. Inparticular, the present invention increases utilization of substratewafers and epitaxy material through a selective area bonding process totransfer individual die of epitaxy material to a carrier wafer in such away that the die pitch is increased on the carrier wafer relative to theoriginal epitaxy wafer. The arrangement of epitaxy material allowsdevice components which do not require the presence of the expensivegallium and nitrogen containing substrate and overlying epitaxy materialoften fabricated on a gallium and nitrogen containing substrate to befabricated on the lower cost carrier wafer, allowing for more efficientutilization of the gallium and nitrogen containing substrate andoverlying epitaxy material.

In another embodiment of the invention the laser facets are produced bycleaving processes. If a suitable carrier wafer is selected it ispossible to use the carrier wafer to define cleaving planes in theepitaxy material. This could improve the yield, quality, ease, and/oraccuracy of the cleaves.

In another embodiment of the invention the laser facets are produced byetched facet processes. In the etched facet embodiment alithographically defined mirror pattern is etched into the gallium andnitrogen to form facets. The etch process could be a dry etch processselected from inductively coupled plasma etching (ICP), chemicallyassisted ion beam etching (CAIBE), or reactive ion etching (ME) Etchedfacet process can be used in combination with the die expansion processto avoid facet formation by cleaving, potentially improved yield andfacet quality. In a preferred embodiment the etched facets would beformed after the transfer of the epitaxial device layers to the carrierwafer. In an alternative embodiment the etched facets could be formed onthe epitaxial wafer or donor wafer and be transferred to the carrierwafer.

In one embodiment, etched facets are formed by use of photo-resist toact as an etch mask for the ICP, RIE or CAIBE etch processes. This is aless preferred method as the photoresist can deform during the etchprocess; causing both the shape of the photo-resist sidewall profile aswell as the shape of the mirror pattern to change during the etchprocess. Such changes in etch-mask shape and sidewall profile can leadto rounding, roughening and unintentional inclination of the etchedfacet, thereby reducing the reflectivity of and potentially increasingscattering from the etched facet. Photo-resists are also known to inducea phenomenon sometimes called micro-masking. Etching of the photo-resistby the dry-etch process results in organic materials in the vapor phasewhich can be redeposited on the sample surface as residue. Onceredeposited this residue locally inhibits etching of the semiconductorleading to a lateral variation in etch rate and roughening of both theetched facet and the etched field in front of the facet. It is morepreferred, then, to use a hard mask to etch the facets.

In a more preferred embodiment, a layer of silicon nitride of siliconoxide is used as a hard mask for the facet etch-process. Etchselectivity between silicon oxide and GaN in chlorine-based dry etchchemistries is typically between 1 and 10 depending on the etch processand chemistry; i.e. the etch rate for oxide can vary between 100% and10%, respectively, of that of the GaN. In general, it is preferred forthe selectivity to be high, i.e. for the oxide etch rate to be lowcompared to the GaN, such that the thickness of the oxide hard mask andshape of the hard mask sidewall does not change greatly during etches.High selectivity also enables the use of thinner hard-masks, therebysaving time in the hard-mask deposition and patterning processes. Thehard mask material is first deposited onto the wafer. Photoresist isthen spun onto the wafer and patterned with the mirror pattern usingstandard lithographic techniques. An oxide dry etch is then used totransfer the mirror pattern to the oxide hard mask. The oxide dry etchprocess could be a dry etch process selected from ICP, CAIBE, or ME.Typical chemistries for etching oxide include fluorine based moleculessuch as CF4, CHF3, SF6, and the like. The oxide is fully removed fromregions of the device wafer intended to be etched. This can beaccomplished either by over-etching the oxide such that all oxideresidue is removed from the bottom of the facet etch region or bycombining a dry etch of the oxide that targets the full oxide thicknesswith minimal over etch and a HF vapor or wet etch to clear out anyremaining oxide residue. The dry over-etch is the preferred method,though it may result into some unintentional etching into the devicelayers, because the HF based etches are significantly less anisotropicthan the dry etch and may result in rounding or roughening of the hardmask sidewalls. The photo-resist is then removed in preparation for thedry etching of the device layers. The device layers are then etchedusing a dry etch process selected from ICP, CAIBE, Ion Mill, ReactiveIon Beam Etching (RIBE), or RIE. In other embodiments, similar processesmay be used with different hard masks, for example silicon nitride couldbe used for a hard mask, or the hard mask might be a metal resistant tothe device layer dry etch process such as nickel.

In general it is preferred for the oxide hard mask to be deposited in ablanket deposition process and subsequently patterned with an etchprocess. This is because standard lithographic patterning requires theuse of organic polymers as photo-sensitive resist layers (i.e.photo-resist) to produce positive and negative reproductions of devicepatterns by masking off regions of the device wafer for lift-off oretch-back processes. Photo-resists typically have a limited range ofprocess temperatures, with temperature exceeding 200 degrees Celsiusbeing problematic due to outgassing of photo-resists as well assoftening and reflow of resists near or above their glass-transitiontemperatures, which can have negative impacts on the quality of patternreproduction in the photo-resist. In general, the densest and mostetch-resistant oxide layers are deposited using processes carried out attemperatures above 200 degrees Celsius, therefore it is difficult todeposit oxide hard masks with high quality using a lift-off process.Moreover, many oxide deposition techniques are conformal, i.e. oxide isdeposited on all exposed surfaces, which makes lift-off based patterningdifficult with thick oxide masks that are on the same order of thicknessas the photo-resist, which tends to become fully encapsulated withoxide. Because of this, in general it is preferred to deposit an oxidehard mask using a blanket deposition and either provide a mechanism bywhich the hard mask may be removed without damaging other components ofthe device wafer or to incorporate the hard mask into the devices suchthat the hard mask need not be removed after etching of the facets.

FIG. 11b schematically shows an embodiment including an etched facetwhere the bonding media is comprised of a plurality of regions with nobonding media underlying the region of the device layers where the facetis etched. A carrier wafer 106 is provided and overlaid by a pluralityof regions comprised of bond media 105. A device layer mesa is provided,also overlaid by a plurality of regions of bond material 104. The mesais comprised by two regions: a cavity region 101 and an anchor region102. Only one end of the cavity region is shown. The opposite end wouldalso have an anchor region. The cavity and anchor regions are separatedby a region that is not over laid by bond media. A silicon oxide hardmask 107 is overlaid on the device layer mesa and patterned with awindow that will define the facet etch region. A dry etch process isused to etch the device layers to form a first facet 108. The carrierwafer is then separated along a separation-line 109 to form a laser bar.

In some embodiments, the hard-mask is comprised of two or more layerswith the upper most layer being resistant to the device layer dry etchprocess and chemistry and one or more of the lower layers beingselectively removable using a chemistry or process that does notsignificantly damage the structures of the device wafer. Such aconfiguration allows for the hard mask to be easily removed from thedevice wafer after etching of the facet.

In an embodiment, the hard-mask is a bi-layer, consisting of two layers,the first layer being germanium and the second being silicon oxide. TheGe under-layer is capable of being removed selectively by etching with awet chemistry including hydrogen peroxide, to which GaN basedsemiconductors and many metals and dielectrics can be safely exposedwithout damage. The silicon oxide thickness should be of an appropriatethickness for the required facet etch-depth and selectivity of the etchprocess. For typical device thicknesses and etch processes, the oxideshould be between 1 and 5 microns thick. The Ge under-layer should bethick enough that it can be efficiently undercut from beneath the oxidehard mask using the hydrogen-peroxide-based selective etch. The Geshould also be thick enough to conformally coat the features of thedevice wafer protected by the hard mask. In regions where the Ge is notconformal the oxide over-layer may contact the device wafer and beresistant to removal during the undercut process. In general it ispreferred for the Ge layer to be between 100 nm and 1 micron, thoughthicker and thinner Ge layers are possible for certain devicedimensions. In some embodiments, after dry etching of the oxide hardmask to transfer the mirror pattern, the Ge layer is removed to exposethe device layer for etching using a hydrogen-peroxide containing wetetch. Removal of the Ge with a wet etch may result in the hard maskbeing undercut, i.e. the Ge is partially removed from the edge of thehard mask resulting in a gap between the edge of the oxide layer and thedevice layers. In other embodiments, the Ge under-layer has poorselectivity relative to the device layers and both the Ge under-layerand the device layers may be etched in the same etch process using theoxide hard mask as a pattern for both. This is a preferred, removable,bi-layer hard-mask process when the oxide deposition or facet etchtemperatures are too high to use a soft under-layer such asphoto-resist. In general process temperatures above 200 C risk causingphotoresist to release gasses or reflow; processes which may result inbubble formation or deformation of the hard mask during deposition.

In an embodiment, the hard mask is a bi-layer. The under-layer isphoto-resist. As with the Ge/oxide bi-layer hard-mask, the resist/oxidebilayer can be selectively removed after facet etching by stripping ofthe resist under-layer. This is a preferred embodiment when it is notpossible to conformally deposit Ge on the device wafer. An equivalentpatterning process is used as with the Ge/oxide bi-layer, however thephoto-resist is removed from the etch region by use of eitherphoto-resist developer or in a preferred embodiment use of a dry etchprocess. Use of a dry-etch process to remove the photo-resist ispreferred because it gives better control of the undercut of the oxideover-layer. The amount of undercut, i.e. removal of under-layer frombeneath the etched edge of the oxide hard-mask, is important because toolarge an undercut may allow the edge of the oxide mask to bend, leadingto a non-ideal facet etch. At the same time, the undercut provides roomfor the photo-resist to reflow during high-temperature facet etchprocesses without affecting the definition of the hard-mask edge. Ingeneral, undercuts of 100 nm to 3 microns are preferred.

In some embodiments, the hard-mask is not removed from the device waferafter etching of the facets. This is a preferred embodiment because itminimizes the number of processing steps required to fabricate a device.In such an embodiment, the hard mask may be incorporated into the deviceand serve a secondary function. For example, in a laser device, the hardmask may serve a secondary purpose as electrical passivation for theridge waveguide.

In an embodiment, a laser ridge is etched using a dry etch process usingphoto-resist and standard lithographic techniques to pattern the ridge.A blanket (i.e. without resist or mask) deposition of silicon oxide isthem performed, with the oxide thickness being greater than 500 nm andless than 6 microns, such that the ridge region, facet regions andexposed carrier wafer regions are covered with oxide. The wafer is thenpatterned with a first facet region using photo-resist and standardlithographic techniques and a lithographically defined mirror pattern isetched into the oxide hard mask using a dry-etch technique such as ICP,RIE, RIBE, ion mill or CAIBE. Chemistries for these dry etches wouldpreferably contain fluorine, but may also contain one or more ofmethane, chlorine, argon and hydrogen. The first facet region of thedevice layers is then etched using a dry-etch technique such as ICP, ME,RIBE, ion mill or CAIBE. In the case of group-III nitride device layersa chlorine-based etch chemistry may be used. The wafer is then thenpatterned with a second facet region using photo-resist and standardlithographic techniques as done with the first facet region. Aprotective mask of photoresist is applied to cover the first etchedfacet region, with the photo-resist region preferably extending at least10 microns beyond the edge of the first etched facet region. A secondlithographically defined mirror pattern is etched into the oxide hardmask using a dry-etch technique such as ICP, ME, RIBE, ion mill or CAIBEusing etch chemistries similar to those used in the first facet etch.The second facet etch may be carried out at elevated temperature becausesince the protective patch of photo-resist is present only to cover thefirst etched facet and prevent damage from the second facet etch, reflowof the protective photo-resist will not affect the roughness or angle ofthe second etched facet. The protective photo-resist is then removedusing either photo-resist stripper, photo-resist developer, a dry-etchor ashing process or some other process for removing organic materials.In order to make electrical contact to the top of the laser ridge, awindow or n-contact via in the oxide hard-mask above the top of thelaser ridge is defined using standard lithographic techniques. The viais then produced by wet or dry etching of the remaining oxide hard mask.When the device layer comprising the top of the laser ridge is exposedby the n-contact via dry-etch, a metal contact can be made using astandard lithographic lift-off technique.

In some embodiments a dry etch is preferred because the isotropic natureof a wet etch may result in poor control over the width of the n-contactvia. Should the via extend, due to unintentional lateral etching, overthe sides of the laser ridge it may be possible to make electricalcontact off of the edge of the ridge and thereby inject current intoportions of the device that do not overlap certain dry-etch chemistriesand conditions can be shown to have negative effects on the lifetime ofdevices. In embodiments of this invention the ridge etch is often on then-type conducting side of the device layer stack.

In one specific embodiment, the n-contact via is produced using atwo-step process. First, the blanket-deposited oxide hard mask ispatterned using photo-resist and standard lithographic techniques. Then-contact via is then etched using a dry etch process such as ICP, ME,RIBE, ion mill or CAIBE using a chemistry which preferably containsfluorine and no hydrogen, but may also contain one or more of methane,chlorine, oxygen, argon and hydrogen. The dry etch process is carriedout such that the majority of the oxide in the n-contact via is removed.The remaining oxide thickness should be minimized so as to limit theamount of wet etching required to fully open the n-contact via whilebeing thick enough to protect the nitride device layers from directexposure to the dry etch process. In general this thickness will varybetween dry etch chemistries and conditions, though typically athickness of 25 to 500 nm is preferred with a thickness below 100 nmbeing more preferred.

In another embodiment, a single mode laser ridge is etched using a dryetch process using photo-resist and standard lithographic techniques topattern the ridge. Ridges of lasers with only a single transverse modeare typically quite narrow, less than 3 microns in width and frequentlyclose to one micron in width. In this case, it would be difficult usingstandard lithographic techniques to pattern and etch a via that onlyoverlaps with the top of the laser ridge. In this embodiment, a thinfilm of passivating oxide is deposited after the ridge etch. An undercutor bi-layer photo-resist is used such that oxide is deposited on theridge sidewalls and may overlap 50 to 200 nm of the top of the ridge atthe ridge edges. The photoresist is then removed to reveal the top ofthe laser ridge, which can then be contacted with a metal pad with ashape defined by standard lithography techniques. It is preferred thatthe metal contact pad not extend beyond the edges of the transferreddie. A blanket (i.e. without resist or mask) deposition of silicon oxideis them performed, with the oxide thickness being greater than 500 nmand less than 6 microns, such that the ridge region, facet regions andexposed carrier wafer regions are covered with oxide. The wafer is thenpatterned with a first facet region using photo-resist and standardlithographic techniques and a lithographically defined mirror pattern isetched into the oxide hard mask using a dry-etch technique such as ICP,ME, RIBE, ion mill or CAIBE. Chemistries for these dry etches wouldpreferably contain fluorine, but may also contain one or more ofmethane, chlorine, oxygen, argon and hydrogen. The first facet region ofthe device layers is then etched using a dry-etch technique such as ICP,RIE, RIBE, ion mill or CAIBE. In the case of group-III nitride devicelayers a chlorine-based etch chemistry may be used. The wafer is thenpatterned with a second facet region using photo-resist and standardlithographic techniques as done with the first facet region. Aprotective mask of photoresist is applied to cover the first etchedfacet region, with the photo-resist region preferably extending at least10 microns beyond the edge of the first etched facet region. A secondlithographically defined mirror pattern is etched into the oxide hardmask using a dry-etch technique such as ICP, ME, RIBE, ion mill or CAMEusing etch chemistries similar to those used in the first facet etch.The second facet etch may be carried out at elevated temperature becausesince the protective patch of photo-resist is present only to cover thefirst etched facet and prevent damage from the second facet etch, reflowof the protective photo-resist will not affect the roughness or angle ofthe second etched facet. The protective photo-resist is then removedusing either photo-resist stripper, photo-resist developer, a dry-etchor ashing process or some other process for removing organic materials.In order to make electrical contact to the top of the metallic contactpad, a window or via in the oxide hard-mask above the top of the laserridge is defined using standard lithographic techniques. The via is thenproduced by wet or dry etching of the remaining oxide hard mask. Becausethe metallic contact pad is wider than the laser ridge and iselectrically isolated from the ridge and mesa by the thin oxide layerdeposited after ridge etch, the via in the hard mask may be formed withmuch looser tolerances for size and position without risking electricalcontact to the mesa off of the ridge. The metal contact pad alsoprotects the nitride device layers from direct exposure to the dry etchprocess.

High-power, multi-mode devices operating with optical outputs of one ormore watts may have ridges with widths in the range of 15-50 microns orlarger. In these devices it is possible to place an n-contact pad,narrower than the ridge width, directly on top of the laser ridgewithout the need for a passivating oxide layer to accommodate errors inlithography. In an embodiment, a multimode laser device is fabricatedwith a ridge width greater than 6 microns. Photoresist and standardlithographic techniques are used to pattern an n-contact with a width of4 microns on top of the laser ridge using a lift-off process such thatthe metallic n-contact is nominally inset from the ridge edges by 1micron on either side. A 2 micron thick blanket oxide is then depositedto act as both a hard mask for facet formation and a passivation layerto electrically isolate the device layer mesa from subsequentlydeposited metal bond pads. In order to electrically connect to then-contact, a via is etched through the passivating oxide layer usingstandard lithographic techniques and a dry etch process. In one examplethe via width is chosen such that it is nominally inset from then-contact pad by 1 micron on either side such that the portion of ridgetop not covered by contact metal is not exposed to the dry etch processduring the via etch.

In an alternative embodiment, a laser ridge is etched using a dry etchprocess using photo-resist and standard lithographic techniques topattern the ridge. A blanket (i.e. without resist or mask) deposition ofsilicon oxide is them performed, with the oxide thickness being greaterthan 500 nm and less than 6 microns, such that the ridge region, facetregions and exposed carrier wafer regions are covered with oxide. Thewafer is then patterned with both the first facet region such as thefront facet and the second facet region such as the back facet usingphoto-resist and standard lithographic techniques and a lithographicallydefined mirror pattern is etched into the oxide hard mask using adry-etch technique such as ICP, ME, RIBE, ion mill or CAIBE. Chemistriesfor these dry etches would preferably contain fluorine, but may alsocontain one or more of methane, chlorine, argon and hydrogen. The firstand second facet regions of the device layers are then etched using adry-etch technique such as ICP, RIE, RIBE, ion mill or CAIBE. In thecase of group-III nitride device layers a chlorine-based etch chemistrymay be used. In this preferred “single-mask” process the etch isperformed on the first and second facets at the same time using atechnique such as a tilted and rotated using a CAIBE or RIBE process, astatic or rotating surface normal etch using an ICP, ME, CAIBE, or RIBEprocess with a very vertical etch profile, or using a tilted etch foreach facet using a CAIBE or RIBE process wherein a first facet region isetched at a first tilt angle, the tilt angle is then changed and thesecond facet regions are etched. In order to make electrical contact tothe top of the laser ridge, a window or n-contact via in the oxidehard-mask above the top of the laser ridge is defined using standardlithographic techniques. The via is then produced by wet or dry etchingof the remaining oxide hard mask. When the device layer comprising thetop of the laser ridge is exposed by the n-contact via dry-etch, a metalcontact can be made using a standard lithographic lift-off technique.

Due to the hybrid or composite nature of this invention wherein GaNdevice layers are transferred to a carrier wafer, the etched facetprocess was determined to be substantially more challenging than etchingfacets in device layers still overlaying the bulk substrate. Thisrequired substantial development and consideration. For example, whenthe facet etch process is carried out at a point in the process afterthe transfer of semiconductor device mesas to the carrier wafer it isimportant for the etch process to be carried out in a way that accountsfor the bond media used in transferring the mesa. For example, in someembodiments the facet etch-process etches through the complete thicknessof the semiconductor device mesa. At the point when the etch penetratesthrough the device mesa the bond media is exposed and can be etched bythe facet etch process. This can have several negative consequencesderived from the risk that the bond media material may be physically orchemically etched and subsequently redeposited on the etched facet.Firstly, if the redeposited material is not easily removed withsubsequent cleaning then it may act as a source of scattering orabsorption of light from the guided mode. The second potential negativeoutcome is that the bond media redeposition on the facet may lead to amicromasking process, i.e. local masking of the facet by redepositedbond-media that leads to roughening of the etched facet.

In some embodiments, a gap is provided in the bond media in the regionof the die where the facet will be etched or an alternative materialsuch as an oxide is included in this region to fill what would be a gapregion. In these embodiments, there is still substantial considerationthat must be taken to the redeposition of the carrier material or thegap filler material once the etch penetrates the device layers. Thisredeposition can degrade the facet morphology through a masking effector other effect and lead to degraded device performance. Moreover, theredeposition can lead to reliability issues. There is also a gap in thebond media on the carrier wafer corresponding to the region on thetransferred wafer where the facet will be etched. A schematicrepresentation of the transferred die in cross-section is shown in FIG.11b . After transfer of the device die to the carrier wafer a region ofthe die corresponding to the region of the facet etch is left suspendedin a so-called “air-bridge” configuration that leaves it unsupported.

In several embodiments according to this invention vertical and smoothfacets are desired for optimum reflectivity and normal edge emission. Inother embodiments the facets may be intentionally angled to direct thelight output at some desired light output direction. For example, thefacets could be etched at about a 45 degree angle to direct lightemission in more of a vertical direction upward or downward from thechip surface. This would create a surface emission device ideal forcoupling in fibers or optical systems, or arraying the laser output tocombine the outputs. In alternative embodiments the facets are angled toreduce the reflectivity and create a SLED device. In some embodimentsthe facets may be made intentionally rough to reduce the reflectivity.

In a preferred embodiment, a GaN based laser diode device dice aretransferred to a SiC carrier wafer. A schematic representation of thebonding and facet formation are shown in FIG. 11b . The GaN-based laserdiode device dice 103 are overlaid by a gold bonding layer 104. The SiCcarrier wafer 106 is overlaid with patterned Au bonding layers 105. TheAu bonding layers are separated into two regions comprising,respectively the active portion of the laser device 101 and an “anchorregion” 102 where the bond media overlays the sidewalls of the devicedie and connects with the cathode metal to form metallic anchors asdescribed previously. Between the active and bonding regions of the diethere is a region with no bond media. Once transferred to the carrierwafer, the region on the die with no bond media overlays a region on thecarrier wafer with no bond media, thereby providing an “air bridge”region of the device die that is not supported from beneath by bondmedia. After transfer of die to the carrier, a hard-mask layer 107comprised of silicon oxide is deposited and patterned using standardlithographic techniques as described previously. The oxide hard-mask isremoved in a “facet formation region” that overlays the region of thedevice die between the regions 101 and 102. A dry etch process selectedfrom RIE, ICP or CAIBE is used to etch the device die in the facetformation region, resulting in the formation of a vertical and smoothfacet 108. Because the facet dry etch process is carried out in a regionwith no Au bond media, there is no risk that Au will be sputtered andsubsequently redeposited on the etched facets or other structures of thedevice die. A singulation process, such as laser scribing followed bybreaking, mechanical scribing with diamond scribes followed by breakingand sawing, among others, can be used to separate or singulate thedevice die from the carrier wafer. The parting line 109 is the positionwhere the edge of the resulting device chip is located. In the exampleof singulation by laser scribing the position 109 would correspond tothe location of laser scribing. In the example of singulation using asawing process, where the saw blade kerf, or width of material removed,is relatively large, i.e. greater than 10 microns, the parting line 109corresponds to the edge of the blade cut-region defining the edge of thedevice chip.

In the previous embodiment, the facet region is a point of concern. Thefacet etch region of the die is only supported from either end, suchthat for very wide facet etch regions, greater than 20 microns, or forvery thin device die, thinner than 2 microns, the facet region may bendunder its own mass or be likely to break during processing. In anotherembodiment, also referencing FIG. 11b , the bond media is also gold,however the region between the active portion of the laser device 101and an anchor region 102 is overlaid with a silicon oxide layer of thesame thickness as the Au bond layer 104. The corresponding regions onthe carrier wafer a configured similarly, with a gold bond layer 105 andthe region between area between the laser device 101 and an anchorregion 102 overlaid with a silicon oxide layer of the same thickness asthe gold bond layer 105. In this embodiment, the facet formation regionis fully supported by the oxide layers, while the oxide layers provide alayer beneath the facet etch region that has a similar chemicalcomposition as the facet etch hard-mask. This is advantageous in that bysupporting the facet etch region from beneath, the facet etch region canbe made arbitrarily wide without the risk of bending or breaking of thedie during processing. Moreover, because the material supporting thefacet etch region has a similar chemical composition as the facet etchhard-mask material it is possible to over-etch the facet region withoutetching a material that is incompatible with the facet etch process.

In alternative embodiments the facets are formed in the epitaxial devicelayers of the transferred gallium and nitrogen containing layers using acleaving process. The cleaving process can be carried out using themethods previously described in this invention such as using a scribingand breaking process. The scribing can be achieved with a laser scribeprocess, a saw scribing process, a diamond scribe process or other. Thescribe could be formed in the carrier wafer, in the transferredepitaxial layer region, or in a combinations of both regions. The scribewould form an initiation point or stress riser for the breaking processand would induce a nice cleavage surface in the epitaxial device layersand in some cases in the carrier wafer.

In yet an alternative embodiment, the facets are formed with a sawingprocess. In a sawing process a rapidly rotating blade with hard cuttingsurfaces like diamond are used, typically in conjunction with sprayingwater to cool and lubricate the blade. Example saw tools used tocommonly dice wafers include Disco saws and Accretech saws. In oneexample a diamond blade rotary saw is used to cut through both thecarrier wafer and the transferred epitaxial layers to result in arelatively smooth and vertical facet surface in the epitaxial layers. Infact, it was discovered that by using the proper blades and sawingconditions that pristine facets can be achieved in the gallium andnitrogen containing device layers. This embodiment is attractive becauseit is possible to combine the bar dicing process with the facetformation process to simplify the process. In alternative examples, acombination of multiple sawing steps such as making multiple cuts toachieve a good facet region and bar singulation. In yet alternativeexamples, sawing steps and cleaving steps, sawing, cleaving, and/oretching steps are combined. Many combinations can be included accordingthe present invention.

As described previously, the facet region of the device is preferablyfabricated using a dry-etch technique such as ICP, ME, RIBE, ion mill orCAIBE, but could be others such as cleaving or sawing. The facet ispreferably vertical and highly smooth such as to act optimally as amirror for reflecting light back into the laser cavity with minimal lossfrom scattering. Optical coatings are disposed on the facet regions tocontrol the reflectivity of the facets. For example, the highlyreflective back facet may be coated with alternating layers ofdielectrics with differing refractive indices such that a distributedbragg reflector (DBR) with high reflectivity (>99.5% at the lasingwavelength) is formed. Suitable dielectrics include: AlN, Al2O3, SiO2,SiN, Ta2O5, among others. Typically the front, or light emitting, facetof a laser cavity is coated with a dielectric film designed to fix thereflectivity at some target value. In some embodiments, the front facetcoating is an anti-reflective coating intended to lower the reflectivityof the front facet. In other embodiments, the front facet coating is aDBR intended to increase the reflectivity above that of the bare facet.In many embodiments, the facets are etched midway through thefabrication process and are exposed to chemicals and surface treatmentsthat while necessary for the completion of subsequent processing steps,may result in damage to the facet. Even minor roughening of the facetmay lead to significant changes in reflectivity. In conventional laserfabrication, the facets are formed by cleaving the laser device wafersinto bars at the end of the fabrication process. The front and backfacet coatings are then deposited on the laser bars using one or more ofelectron beam (e-beam) evaporation, sputtering, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),electron cyclotron resonance (ECR) based deposition, among others suchas atomic layer deposition (ALD). In some preferred embodiments a lowdamage high quality passivation layer such as AlN, SiN, Al₂O₃, or AlONof between 1 nm and 50 nm is deposited as a first layer on the facet.This passivation layer is typically crystalline such as polycrystallineor single crystalline and can preferably be formed using technique suchas ECR or ALD. In some embodiments the passivation layer is applied tothe facets directly after facet etch and in some cases without breakingvacuum such as in an ALD process. In other cases facet protect layerscan be used as facet coating layers. The facets are in effect passivatedby the coatings and protected from degradation due to chemical orenvironmental exposure.

In this invention, the facets are preferably formed using an etchprocess. In many embodiments, the facet etch occurs midway through theprocessing of the GaN mesas after they have been transferred to thecarrier wafer. In other embodiments, the facets are etched on the GaNmesas prior to the selective removal of the sacrificial layers. Ineither case, the facets are then exposed to all subsequent processingsteps during the fabrication of the laser devices. In order to protectthe facet from chemical or mechanical damage during processing a facetprotect layer may be overlaid on the etched facet to form a protectivebarrier. The protect layer may be left of the facet for one or moreprocessing steps and is, in general, removable with a process that isbenign to the facet. For example one could use silicon oxide as aprotect layer and remove it with a solution of HF acid. Another examplewould be to use Ge as a protect layer and remove it with a dilute H2O2solution. Other materials that may be used for facet protect layersinclude: silicon nitride, Ta2O5, SiN, AlN and Al2O3, among others. It ispreferable for the protect layer thickness to be optimized such that itis thick enough to prevent chemical or mechanical damage to the facetswhile also thin enough to be easily removed using processes that arebenign to the rest of the laser device structures. For example, thefacet protect layer could be comprised of silicon oxide with a thicknessgreater than 10 nm and less than 500 nm. In this example, the facetprotect layer is removable with a dilute solution of HF acid where theoxide etch rate is on the order of several hundred nm per minute.Removal in weak solutions of HF for periods less than 5 minutes is idealas regions of the device far from the facets can be protected withphotoresist. Short etch times limit the ability of the dilute HFsolution to permeate the photoresist mask nor intrude under the edge ofthe photoresist mask.

In an embodiment, GaN device layers are transferred to a carrier wafer.Laser ridges are then etched into the mesas followed by the depositionof an oxide hard mask. The facet etch regions are then patterned in theoxide hard mask and a dry etch process is used to etch the facets on thedevice layers. A silicon oxide facet protect layer with a thickness of200 nm is then overlaid on the facets using a blanket deposition processsuch as PECVD, e-beam evaporation, sputtering, or the like. Immediatelyprior to singulation of the carrier wafer into bars of laser devices thefacet protect layer is removed using a wet etch in a dilute solution ofHF acid. In some embodiments, the carrier wafer is patterned withphoto-resist such that only the facet regions are exposed to the diluteHF, thereby allowing for removal of the facet protect layer whileprotecting other portions of the devices which may be damaged by HFacid.

In some embodiments, the protect layer is designed to be left on facetsuch that it is incorporated into the coatings on the facet. Forexample, the silicon oxide coating thickness may be adjusted such thatit forms the first layer in the DBR coatings of the front and backfacets. In another example, the oxide protect layer is chosen to have athickness of roughly one-quarter of the lasing wavelength such that itacts as an anti-reflective coating and has minimal effect on theperformance of highly-reflective and anti-reflective coatings overlaidon it.

In some embodiments, the facet may be protected using photoresist duringprocessing steps that may otherwise not require patterning. For example,during singulation of devices from the carrier wafer it is possible forthe facets to be damaged. Singulation may be carried out by a number ofmethods such as laser scribing and breaking of the carrier and sawing ofthe carrier. In both processes, particles of carrier wafer material arereleased from the carrier and may either adhere to the facet surface orcontact it in a way that results in roughening. This can be avoided bycoating the carrier wafer in a substance such as photoresist which iseasily removed using solvents and which prevents contact between thefacets and the material liberated from the carrier wafer during thesingulation process. The photoresist is then removed from individualbars using solvents or dedicated photoresist strippers.

In another embodiment of the invention the laser die are alsocharacterized by a third pitch characterizing their spacing on thesubstrate parallel to the laser ridge. The third pitch is often a designwidth that is suitable for fabricating each of the laser die into laserdevices. For example, a substrate containing lasers with laser cavitiesabout 1 mm in length may have laser die fabricated at a third pitch ofabout 1.05 mm to about 2 mm, but preferably the third pitch is less thanabout 10% longer than the laser cavities fabricated on the laser die.

In an example, these die are then transferred to a carrier wafer at asecond and fourth pitch where the second pitch is greater than the firstpitch and the fourth pitch is greater than the third pitch. Laser facetsare produced by an etched facet process as described above. The increasein distance between the laser die due to the fourth pitch allows foreasy integration of elements in front of the laser facets while thesecond die pitch allows for easy mechanical handling and room for wirebonding pads positioned in the regions of carrier wafer in-betweenepitaxy mesas, enabling a greater number of laser diodes to befabricated from substrate and overlying epitaxy material. FIG. 18 showsa schematic of the transfer process including both a second and fourthpitch on the carrier wafer.

In another embodiment of the invention die singulation is achieved bycleaving processes which are assisted by the choice of carrier wafer.For example, if a silicon or GaAs carrier wafer is selected there willbe a system of convenient cubic cleave planes available for diesingulation by cleaving. In this embodiment there is no need for thecleaves to transfer to the epitaxy material since the die singulationwill occur in the carrier wafer material regions only.

In another embodiment of the invention any of the above process flowscan be used in combination with the wafer tiling. As an example, about7.5 mm by about 18 mm substrates can be tiled onto about a 2 inchcarrier wafer, allowing topside processing and selective area bonding tobe carried out on multiple epitaxy substrates in parallel for furthercost savings.

In another embodiment of the invention the substrate wafer is reclaimedafter the selective area bond steps through a re-planarization andsurface preparation procedure. The epitaxy wafer can be reused anypractical number of times.⁶

In an example, the present invention provides a method for increasingthe number of gallium and nitrogen containing laser diode devices whichcan be fabricated from a given epitaxial surface area; where the galliumand nitrogen containing epitaxial layers overlay gallium and nitrogencontaining substrates. The epitaxial material comprises of at least thefollowing layers: a sacrificial region which can be selectively etchedusing a bandgap selective PEC etch, an n-type cladding region, an activeregion comprising of at least one active layer overlying the n-typecladding region, and a p-type cladding region overlying the active layerregion. The gallium and nitrogen containing epitaxial material ispatterned into die with a first die pitch; the die from the gallium andnitrogen containing epitaxial material with a first pitch is transferredto a carrier wafer to form a second die pitch on the carrier wafer; thesecond die pitch is larger than the first die pitch.

In an example, each epitaxial die is an etched mesa with a pitch ofbetween about 1 μm and about 10 μm wide or between about 10 micron andabout 50 microns wide and between about 50 and about 3000 μm long. In anexample, the second die pitch on the carrier wafer is between about 100microns and about 200 microns or between about 200 microns and about 300microns. In an example, the second die pitch on the carrier wafer isbetween about 2 times and about 50 times larger than the die pitch onthe epitaxy wafer. In an example, semiconductor laser devices arefabricated on the carrier wafer after epitaxial transfer. In an example,the semiconductor devices contain GaN, AlN, InN, InGaN, AlGaN, InAlN,and/or InAlGaN. In an example, the gallium and nitrogen containingmaterial are grown on a polar, non-polar, or semi-polar plane. In anexample, one or multiple laser diode cavities are fabricated on each dieof epitaxial material. In an example, device components, which do notrequire epitaxy material are placed in the space between epitaxy die.

In another embodiment of the invention the carrier wafer is anothersemiconductor material, a metallic material, or a ceramic material. Somepotential candidates include silicon, gallium arsenide, sapphire,silicon carbide, diamond, gallium nitride, AlN, polycrystalline AlN,indium phosphide, germanium, quartz, copper, gold, silver, aluminum,stainless steel, or steel.

In common laser packages like the TO canister, the laser device isindirectly attached to the body of the package which is itself solderedor otherwise attached to a heat sink with a method providing highthermal conductivity. To prevent shorting of the laser diode to thepackage a submount is provided between the laser diode material and thepackage. The submount is a thin layer of material that is both a goodthermal conductor and electrically insulating. Submount materialsinclude aluminum nitride, sapphire (Al2O3), beryllium oxide and chemicalvapor deposited diamond which offer good thermal conductivity but lowelectrical conductivity.

In another embodiment of the invention the carrier wafer material ischosen such that it has similar thermal expansion properties togroup-III nitrides, high thermal conductivity and is available as largearea wafers compatible with standard semiconductor device fabricationprocesses. The carrier wafer is then processed with structures enablingit to also act as the submount for the laser device. In some embodimentsthe facets of laser devices may be formed by bonding the laser dice to acarrier wafer that cleaves easily. By aligning the laser dice such thatthe intended plane of the facet is coplanar with an easily cleaved planeof the single-crystal carrier wafer. Mechanical or laser scribes canthen be used, as described above, to guide and initiate the cleave inthe carrier wafer such that it is located properly with respect to thelaser die and carrier wafer patterns. Zincblende, cubic anddiamond-lattice crystals work well for cleaved carriers with severalsets of orthogonal cleavage planes (e.g. [110], [001], etc.).Singulation of the carrier wafers into individual die can beaccomplished either by sawing or cleaving. In the case of singulationusing cleaving the same cleavage planes and techniques can be used asdescribed for facet formation. This embodiment offers a number ofadvantages. By combining the functions of the carrier wafer and submountthe number of components and operations needed to build a packageddevice is reduced, thereby lowering the cost of the final laser devicesignificantly. Selection of the carrier wafer with high thermalconductivity (e.g. greater than about 150 K/mW) allows for the use offull thickness carrier wafers (e.g. >about 300 microns) with low thermalresistance, therefore no thinning of the carrier wafer is required.

In an example, SiC is used as both a carrier and a submount. SiC isavailable in wafer diameters up to about 150 mm from multiple vendorswith high thermal conductivities ranging from about 360-490 W/mKdepending on the crystal polytype and impurities. FIG. 12 shows aschematic of the cross section of a SiC wafer 402 used as both a carrierwafer and a submount. Before transfer of the laser device material theSiC wafer is fabricated with a bonding layer 401 for attachment to thelaser device package. The opposing face of the SiC wafer is fabricatedwith a thin, electrically insulating layer 403, electrically conductivetraces and wire-bond pads 405 and an electrically conductive bondingmedia 108. The laser device material is then transferred to the carriervia previously described processes. Electrical isolation layers 408 arefabricated on the wafer using standard lithographic processes andelectrical contacts and wire bond pads 407 are made to the top-side ofthe laser device. The electrical isolation layers are important toinsure that the laser devices are electrically isolated from the laserpackage or heat sink, which is typically grounded to the rest of thelaser system. The passivation layers can be located either between thecarrier and the epitaxial die or on the side of the carrier wafer thatis bonded to the package or heat sink. The individual dice can besingulated from the SiC wafer and packaged. SiC wafers are available inmany polytypes including the hexagonal 4H and 6H as well as the cubic3C. The high thermal conductivity of SiC allows for using commerciallyavailable SiC wafers as submounts without thinning. In some embodimentsthe insulating layer 403 is placed between the SiC substrate 402 and thebonding layer 401. This allows for the SiC wafer to be used toelectrically access the die or to act as a common electrode for many dieas shown in FIGS. 15 and 17.

In one embodiment, laser dice are transferred to a carrier wafer suchthat the distance between die is expanded in both the transverse (i.e.normal to the laser ridge direction) as well as parallel to the lasercavities. This can be achieved, as shown in FIG. 13, by spacing bondpads on the carrier wafer with larger pitches than the spacing of laserdie on the substrate. It should be noted that while technically feasibleto use cleaved facets in such a configuration, etched facets would be asimpler process to implement. This is due to the need for thetransferred die to be of finite length in all directions, such thatcleaved facets would result in the expanded area in front of the diebeing removed during the cleaving process.

In another embodiment of the invention laser dice from a plurality ofepitaxial wafers are transferred to the carrier wafer such that eachdesign width on the carrier wafer contains dice from a plurality ofepitaxial wafers. When transferring die at close spacings from multipleepitaxial wafers, it is important for the untransferred die on theepitaxial wafer to not inadvertently contact and bond to die alreadytransferred to the carrier wafer. To achieve this, die from a firstepitaxial wafer are transferred to a carrier wafer using the methodsdescribed above. A second set of bond pads are then deposited on thecarrier wafer and are made with a thickness such that the bondingsurface of the second pads is higher than the top surface of the firstset of transferred die. This is done to provide adequate clearance forbonding of the die from the second epitaxial wafer. A second substratewhich might contain die of a different color, dimensions, materials, andother such differences is then used to transfer a second set of die tothe carrier. Finally, the laser ridges are fabricated and passivationlayers are deposited followed by electrical contact layers that alloweach dice to be individually driven. The die transferred from the firstand second substrates are spaced at a pitch which is smaller than thesecond pitch of the carrier wafer. This process can be extended totransfer of die from any number of substrates, and to the transfer ofany number of laser devices per dice from each substrate.

In some embodiments, multiple laser die are transferred to a singlecarrier wafer and placed within close proximity to each other. Dice inclose proximity are preferably within one millimeter of each other, morepreferably within about 200 micrometers of each other and mostpreferably within about 50 microns of each other. The die are alsobonded such that when laser cavities and facets are fabricated theoptical axes of the emitted laser beams are aligned to each other toless than about 5 degrees and more preferably less than about 1 degreeand most preferably less than about 0.5 degrees. This has the advantageof simplifying the optical elements needed to couple laser light fromlaser devices fabricated on the several laser dice into the same systemelements, e.g. lenses, fiber optic cables, other waveguide elements,etc.

In some embodiments, semi-insulating SiC may be used, such that the SiCwafer is itself electrically isolating and electrical isolation layersneed not be used.

FIG. 13a is a schematic representation of a laser device in accordancewith an embodiment of this invention. The carrier wafer containsmultiple, conductive through-vias 309 per die, with each through-viabeing overlaid on both sides of the carrier wafer with a metallic pad310. The device mesa is transferred to the carrier wafer and patternedwith a ridge. The bond pad on the carrier wafer is electricallyconnected to one of the through vias. A metal electrode is deposited ontop of the ridge and is connected to the metal pad of one of thethrough-vias. A dielectric material is overlaid on the carrier such thatthe device mesa and electrical interconnects are fully encapsulated bythe dielectric. A planarization process such as lapping is used toplanarized the dielectric and leave a thin (less than 10 micron thickand preferably less than 1 micron thick) layer of dielectric above themetal electrode on top of the laser ridge. The planarized dielectric isthen overlaid with a bond pad 308 which is used to solder the device toa heat sink such that the backside metal contacts are accessible forelectrically contacting the laser device.

In some embodiments, it is desirable to extract heat away from the laserdevice layers in a direction that is not primarily through the carrierwafer material. This can be achieved by processing the transferred mesassuch that resulting laser device can be soldered or bonded to a heatsinksuch that the laser device layers are positioned between the carrierwafer material and the heat sink. In an embodiment, one or more laserdice are bonded to a carrier wafer consisting of an electricallyinsulating material and containing metal-filled through vias. Thecarrier wafer may consist of single or poly-crystalline AlN, single orpoly-crystalline semi-insulating SiC, BN, semi-insulating silicon andquartz among others. The through vias provide an electrical path forcontacting the laser devices from the backside of the carrier wafer, andcan either be filled with a conductive compound such as ametal-containing epoxy or paste, or they may be plated with metal orplated with metal in conjunction with a non-conductive material to fillthe hole. It is preferred for the vias to be filled to reduce the likelyhood of bubbling of photo-resist or disruption of photo-resist planarityduring processing of the devices.

After the laser ridge is fabricated, electrical contacts are depositedon the ridge top and electrical connections are made to both the firstand second through vias the device side of the carrier wafer isplanarized. This is accomplished by first passivating the surface with athick, electrically insulating material either using a spin-ondielectric such as BCB or a physical or vapor based deposition process.A planarization process is then used to produce a flat surface suitablefor soldering either with a dry-etching or lapping process. For aspin-on dielectric this can be achieved by spinning on a layer ofdielectric precursor thick enough such that when the spin on dielectricis cured all features of the laser device are fully encapsulated by thedielectric layer. Spin on dielectrics tend to be self-planarizing in thesense that surface tension tends to flatten the free surface of the filmbefore curing, however further planarization can be achieved by use ofthe an isotropic dry etch or a lapping process. Typically the spin ondielectric film thickness would need to be two to four times thickerthan the highest feature of the laser device in order to insure adequatecoverage for planarization. A similar planarization can be achieved bydepositing dielectrics using a chemical vapor deposition or e-beam basedprocess. In this case, the deposition must be conformal enough to fullypassivate the laser device while also being thick enough that a lappingor anisotropic dry etch can be used to remove high and low spots. Afterplanarization, only a very thin layer of dielectric remains above thelaser device layers. This layer is preferably fully dense, withoutpinholes that would lead to electrical shorting, while at the same timebeing thin enough that the thermal impedance of the layer is minimal. Ingeneral this layer should be less than one micron thick above the laserdevice layers. More preferably the dielectric layer above the laserdevice layers would be less than 250 nm thick.

One or more metal bond pads are then deposited on the planarized surfacesuch that the device can be soldered to a heat-sink with the laserdevice between the heat sink and the carrier wafer. The metalthrough-vias then provide a means of electrically accessing the laserdevice with probes, clips or wire bonds. This embodiment has twoadvantages. The first is that the laser device is soldered directly tothe heat sink, rather than via the carrier wafer, which may reducethermal impedance in the path directly between the light emitting regionof the device and the heat sink. The second is that a highthermal-conductivity carrier wafer can be used as a secondary heatspreader to extract heat from the laser device in the direction awayfrom the heat sink and conduct it laterally through the carrier waferand thereby lowering the total thermal resistance of the device. Aschematic representation of this embodiment is shown in FIG. 13 a.

In another embodiment, the heat sink acts as an electrode for the deviceand only one through via is needed to give electrical access to theother electrode of the laser device. A schematic representation of thisembodiment is shown in FIG. 13 b.

FIG. 13b schematic representation of a laser device in accordance withan embodiment of this invention. The carrier wafer 303 is an insulatingmaterial containing through vias 307 that are either filled with aconductive material, have inner surfaces coated in a conductivematerial, or have inner surfaces coated in a conductive material as wellas a filler material. Conductive bond media 306 is overlaid on thecarrier such that it is electrically connected to the through via whichis connected to a conductive electrode 304 overlaid on the back of thecarrier wafer. A device mesa is transferred to the carrier and overlaysthe bond media. A laser ridge is patterned into the mesa 305. Adielectric material 302 is overlaid on the carrier wafer, with the topof the laser ridge exposed. A metal contact layer 301 is deposited,overlaying both the top of the laser ridge and the top of the dielectricmaterial. A polishing or dry etch based planarization process is used toplanarized the dielectric material and the contact layer such that thecontact layer can be used as a solder pad for bonding the device to aheat sink.

In another related embodiment, the heat sink is patterned withelectrically isolated bond pads such that both the laser cathode andanode connections can be made via the heat sink. In this embodiment,through-vias in the carrier wafer are not needed.

As an example, laser die from a red emitting AlInGaAsP laser devicewafer (emitting at a wavelength between 600 and 700 nm, but preferablybetween 620 and 670 nm), a green emitting GaN laser device wafer(emitting at a wavelength between 500 and 600 nm, but preferably between510 and 550 nm) and a blue emitting GaN laser device wafer (emitting ata wavelength between 400 and 500 nm, but preferably between 430 and 470nm) could be transferred to a single carrier wafer. Laser cavities,mirrors and electrical contacts could be processed on the die andcarrier wafer using standard lithographic processes with structuressimilar to those described above such that laser devices on each diceare individually addressable and can be driven separately. Facets wouldbe fabricated either with a dry etch process (e.g. RIE, ICP or CAIBE) orby cleaving the carrier wafer. After singulation, the resulting laserchip would have an effective emitter size similar to a standard laserdiode device (i.e. less than about 200 microns) and would allow forred-green-blue color mixing. Such an RGB laser chip would greatlysimplify the design and fabrication of a laser light source forprojection and display applications. The laser devices would all bealigned to each other and closely spaced (i.e. within about 10-100microns), thereby reducing fabrication cost by removing both the need toprovide separate optical elements such as lenses and to separately alignall emitters with the system optics.

In another embodiment, multiple die from multiple epitaxial wafers aretransferred to the same carrier wafer with the laser die overlaid. FIG.25 shows a schematic of the cross section of a carrier wafer duringvarious steps in a process that achieves this. Die 502 from a firstepitaxial wafer is transferred to a carrier wafer 106 using the methodsdescribed above. Laser ridges, passivation layers 104 and ridgeelectrical contacts 105 are fabricated on the die. Subsequently bondpads 503 are deposited overlaying the ridge electrical contacts. Asecond substrate 506 which might contain die of a different color,dimensions, materials, and other such differences is then used totransfer a second set of die 507 to the carrier at the same pitch as thefirst set of die. Laser ridges, passivation layers and ridge electricalcontacts can then be fabricated on the second set of die. Subsequent diebond and laser device fabrication cycles can be carried out to produce,in effect, a multiterminal device consisting of an arbitrary number oflaser die and devices as shown in cross section in FIG. 22.

In some embodiments of an RGB device fabricated according to thisinvention, the device will have individual laser or SLED devicesspatially located much more closely than is practical with conventionaltechnology. Even with this improvement, it is possible that there willbe artifacts in a final imaged spot from the three wafers when they arecollimated and focused through the same set of optics. For example, itis possible depending on the particular nature of the system that a10-50 micron separation between emitters could result in a variation inprojected location of the individual spots by a distance that is similarto some multiple of the pixel spacing in the final image. This wouldresult in degraded image quality as the individual color channels wouldbe noticeably separated in the final image or illuminated spot. Onesolution to this problem is to include a waveguide on the laser devicechip that acts to combine the beams in a way that overlaps them or movesthem closer together.

FIG. 25f shows a schematic representation of a RGB laser chip utilizinga dielectric waveguide patterned on the carrier wafer to combineindividual laser beams. The laser carrier chip 301 is cut from thecarrier wafer. Three laser or SLED devices 302 are transferred to thelaser chip. A dielectric waveguide 304 is deposited and patterned on thecarrier utilizing standard lithographic processes. In this case, theemitted laser light is combined from three separate waveguides, combinedinto one waveguide and emitted from the dielectric waveguide end 305.FIG. 25g shows a schematic representation of a RGB laser chip utilizinga dielectric waveguide patterned on the carrier wafer to combineindividual laser beams. The laser carrier chip 201 is cut from thecarrier wafer. Three laser or SLED devices 202 are transferred to thelaser chip. A dielectric waveguide 205 is deposited and patterned on thecarrier utilizing standard lithographic processes. Patterned features ofthe waveguide such as total-internal reflection based turning mirrors204 can be included to turn the emitted laser light. In this case, theemitted laser light is turned at a 90 degree angle and emitted from thedielectric waveguide end 206.

In an embodiment, the patterned waveguide is formed from a dielectric.This dielectric can be one or more of spin-on glass such as BCB, PECVDor sputtered silicon oxide or silicon nitride, oxynitrides,polydimethylsiloxane, and silicones among others. The waveguide can bestructured with a core or relatively high index material and cladding oflow index, patterned material. The waveguide can consist of a core only,utilizing vacuum or atmosphere as a low-index cladding. The waveguidecan be structured to utilize the carrier wafer material as part of thewaveguide cladding. In all cases, the emitting end of the waveguide maybe coated with an anti-reflective coating to limit back-reflections andcoupling of the waveguide to the laser devices.

In a specific embodiment, the patterned waveguide utilizes turningmirrors patterned into the shape of the waveguide to change thedirection of the laser light. As in FIG. 25g , these mirrors can be usedto reduce the distance of separation between the beams. In FIG. 25g itcan be seen than appropriate choice of the turning mirror dimensions anddistance from the emitting facets of the laser or SLED devices allowsthe separation to be reduced from the spacing of the devices d1 to asmaller spacing d2. The turning mirrors can be flat, resulting in only aturning of the beam, or they can be curved to allow for a focusing ofthe laser light in one dimension. For example, a turning mirror with anappropriate parabolic shape could be used to turn as well as partiallyor fully collimate the laser light. Here the design restrictions arethat the apparent focal point of the divergence of the laser light afterbeing emitted from the emitting facet of the laser would need to bealigned spatially with the focal point of the parabolic mirror.Dielectric or metallic coatings could be used to increase thereflectivity of the turning mirrors. Because the dielectric waveguide isnot being used to recycle light the reflectivity of the turning mirroronly needs to be relatively high and not about 99.9%. Silver, forexample, or aluminum may have sufficiently high reflectivity dependingon the wavelength of the laser light. Multi-layer dielectric braggreflectors could also be used, with layers fabricated from Si, Al and Tacontaining oxides and nitrides among other dielectric materials.

In a specific embodiment, the patterned waveguide utilizes a forkedwaveguide 304 that combines the laser light into a single beam byjoining the waveguides into a single branch. Careful design of thewaveguide shape must be made to limit loss from scattering at regionswhere the waveguides a joined.

Of course there are other examples of waveguide and free-space beamcombining technologies that could be included in the present invention.

As an example, FIG. 26 shows various ways that three dice from the sameor different substrates can be individually addressed electrically suchthat laser devices fabricated on each dice can be operatedindependently. FIGS. 26 (A) and (B) show a plan view and cross sectionof a single repeat unit on the carrier wafer, here called a “chip”.Three electrically conductive bond pads 602 are provided for bondingdice from one or more substrates. The bond pads are connectedelectrically via the conductive carrier wafer to a common electrode thatalso serves as a bond pad for soldering to a submount, heat sink orotherwise integrating into a system. Top side electrical contacts aredeposited and are extended from the laser dice to wire-bond pads 603located in an area of the chip not containing laser dice. The metaltraces and pads are isolated from the carrier wafer by an insulatinglayer 606. FIGS. 26 (C) and (D) show a similar chip where thebottom-side electrical contact is made from a conductive layer 604deposited on the front side of the chip. In this example the topsideelectrical connections and chips are isolated by insulating layers 606from each other as well as the carrier wafer and the bond pad on thebottom of the chip is only used for mounting and providing good thermalconductivity. FIGS. 26 (E) and (F) show a similar chip where the laserdice are connected to a common electrode on their bottom sides via thecarrier wafer. In this configuration electrical access to the carrierwafer is made through a top-side wire-bond pad 604 rather than throughthe bottom side of the carrier wafer.

As an example, FIG. 28 shows a similar configuration of multiple laserdice transferred to a carrier wafer. FIG. 28 (A) shows a cross sectionof one laser chip after transfer of the lase dice 801. In this examplethe laser dice are longer than the laser chips with boundaries 808 and809. Electrical contact layers 807 (shown in FIG. 28 (B)) are depositedalong with electrically insulating layers 806 intended to preventshorting of the electrical contact layers using standard lithographictechniques. A laser scriber or mechanical scribe is used as describedpreviously to produce scribe marks 810 that initiate and guide thecleave. In this figure the scribe marks are “skip scribe marks” formedwith a laser scribing tool. In other embodiments the scribes can beformed mechanically and can be formed on the back of the carrier waferusing either skip or continuous scribing. The laser chips are thencleaved into bars along the direction 808 while simultaneously formingthe front and back facets of the laser cavity. The laser chips are thensingulated along the direction 809 using cleaving, sawing, through-waferlaser scribing or some other like method.

In one embodiment, the multiple laser dice are bonded to a carrier waferconsisting of an insulating material and containing metal-filled throughvias. FIG. 27 shows a schematic of this configuration. The through viasunder the laser dice are isolated electrically from the dice by a thininsulating layer 705. Electrical contact is made via a similar set ofconductive and insulating layers deposited and patterned using standardlithographic techniques. This embodiment makes it possible to produce achip that can be attached to a package via a surface mount process,which for low power parts, where thermal considerations are not asimportant, would allow for integration of laser chips directly ontoprinted circuit boards.

In some embodiments, multiple laser die are transferred to a singlecarrier wafer and placed within close proximity to each other. Dice inclose proximity are preferably within one millimeter of each other, morepreferably within 200 micrometers of each other and most preferablywithin 50 microns of each other. The implication of this close proximityof the laser or SLED dice are that the emitting apertures from each ofthe resulting laser diode or SLED devices are within 1 mm, 200 um, or 50um of each other such that the output beams are closely spaced.Moreover, the die are also preferably bonded such that when lasercavities and facets are fabricated the optical axes of the emitted laserbeams are aligned to each other to less than 5 degrees and morepreferably less than 1 degree and most preferably less than 0.5 degrees.These characteristics of the integrated nature of the different emittersaccording to this invention has the advantage of simplifying the opticalelements needed to couple laser light from lase devices fabricated onthe several laser dice into the same system elements, e.g. MEMS mirrorarrays, fiber optic cables, waveguide element, etc.

In conventional RGB displays where the output beams of separate laserdevices or SLED devices are combined, the combining is generally donewith dichroic mirrors, cubes, or other discrete optical elements. Theuse of multiple optical elements to achieve this beam combining can leadto excess loss and decreases the optical efficiency while adding costand complexity to the manufacturing due to the increased number ofcomponents and alignment, respectively. According to the presentinvention the different color emitters are tightly spaced and can enableoptical engines that do not require any combining components. In theconventional configuration wherein the optical beams are not closelyspaced, the primary color images would be unacceptably displaced. Whenthe physical shift and the beam directions between the light sources aretaken into account with the signal modulation algorithms, the primarycolor images can be properly superimposed regardless of the separationbetween the light sources and differences between their beam directions.

In one example of three light sources shifted by 100 um, the scannedarray might have 1940 pixels in one direction instead of 1920 pixels inthat direction for the high definition display. In addition, thescanning mirror, which has typically 1 mm diameter, would have its sizeincreased by 200 um.

As an example, laser speckle is a phenomenon that produces a spatialvariation in the brightness of a laser spot projected on a surface.Laser light is coherent, and as such when it is reflected off of a roughsurface such as a projection screen the height variation in the surfaceof the screen can lead to spatially varying constructive and destructiveinterference in the laser light. This property is not desirable insystems like laser based projectors, where images formed by directprojection of a laser light will have degraded image quality. Laserspeckle can be reduced by combining several laser devices into a singlesource. This is particularly advantageous in single mode devices wherethe spectral width of the laser is narrow. The present invention enablesseveral laser devices emitting at similar wavelengths (i.e. wavelengthdifferences as large as 50 nm and as small as 1 nm) can be transferredto the same laser chip on a carrier wafer. Because laser die can betransferred from different substrates and placed in close proximity(within 10-100 microns) on the carrier wafer it is possible to selectsubstrates such that the transferred die differ in wavelength by adesired amount while retaining a laser device-the laser chip-whichfunctions equivalently to a single laser emitter. For example, an RGBchip consisting of six laser die could be fabricated. Two of the diewould be lasers emitting blue light at peak wavelengths of 440 and 450nm or between 435 nm and 465 nm. Two of the die would emit green lightat peak wavelengths of 515 and 525 nm or between 505 and 540 nm. Two ofthe die would emit red light at peak wavelengths of 645 and 655 nm orbetween 630 and 660 nm. As would be obvious to someone skilled in theart, wavelength pairs could be chosen to vary both the apparent color ofeach of the red, green and blue laser pairs while also varying theamount of speckle reduction; and increased separation in wavelengthleads to an increased reduction in laser speckle.

In an additional embodiment wherein the RGB laser or SLED chip iscomprised of more than 3 laser or SLED sources, the center wavelength ofthe spectra of the individual sources would be chosen to maximize thearea of the color gamut that can be rendered by the laser sources. FIG.27a shows a representation of the CIE color gamut in the x and ycoordinates. The commonly used RGB color space is indicated by theregion 101. Laser sources have exceptionally narrow spectra compared tolight emitting diodes and phosphor sources. Even for high-power,wide-ridge devices which lase from several or more lateral modes thespectral widths can be below 2 nm. Such narrow spectra mean that thecolor coordinates for laser primaries can be much closer to the locus ofspectral (monochromatic) colors. It is therefore possible to render morecolors, and specifically more saturated colors, with laser sources thanwith LEDs or phosphor sources. FIG. 27a shows the extent of the commonlyused sRGB color space 101 along with the color space achievable for ahypothetical laser-based RGB laser chip comprised of lasers emitting at635, 530 and 450 nm. This source is able to render saturated yellows andreds, but is far from the locus of spectral colors for cyans and shortwavelength greens. By adding a fourth laser device emitting at 510 nm awider area of the gamut can be displayed 103. Almost the entirety of thecolor gamut can be reached by adding a fifth laser device emitting at495 nm and optionally shifting the 530 nm emitter to 525 nm. This isshown in the figure as area 104.

In an embodiment, an integrated 4 laser or SLED device is fabricatedaccording to this invention with emitter center wavelengths separated bygreater than or equal to 10 nm. A “red” device is provided with centerwavelength less preferably between 600 and 700 nm, more preferablybetween 620 and 650 nm and most preferably between 630 and 640 nm. A“blue” device is provided with wavelength less preferably between 400and 480 nm, more preferably between 430 and 470 nm and most preferablybetween 440 and 460 nm. A “green” device is provided with wavelengthless preferably between 510 and 540 nm, more preferably between 520 and540 nm and most preferably between 525 and 535 nm. A “short wavelengthgreen” device is provided with wavelength less preferably between 480and 520 nm, more preferably between 500 and 515 nm and most preferablybetween 505 and 515 nm.

In an embodiment, an integrated 5 laser or SLED device is fabricatedaccording to this invention with emitter center wavelengths separated bygreater than or equal to 10 nm. A “red” device is provided with centerwavelength less preferably between 600 and 700 nm, more preferablybetween 620 and 650 nm and most preferably between 630 and 640 nm. A“blue” device is provided with wavelength less preferably between 400and 480 nm, more preferably between 430 and 470 nm and most preferablybetween 440 and 460 nm. A “green” device is provided with wavelengthless preferably between 510 and 540 nm, more preferably between 520 and540 nm and most preferably between 525 and 535 nm. A “short wavelengthgreen” device is provided with wavelength less preferably between 480and 520 nm, more preferably between 500 and 515 nm and most preferablybetween 505 and 515 nm. A “cyan” device is provided with wavelength lesspreferably between 470 and 505 nm, more preferably between 480 and 500nm and most preferably between 490 and 500 nm.

Of course other combinations of laser center wavelengths could bechosen. For example, a four emitter device could be chosen with lasersemitting at 635, 530 and 450 nm and the fourth device emitting at around495 nm to enhance rendering of saturated blues. Other combinations arepossible.

As an example, laser die from a red emitting AlInGaAsP laser devicewafer, a green emitting GaN laser device wafer and a blue emitting GaNlaser device wafer could be transferred to a single carrier wafer. Lasercavities, mirrors and electrical contacts could be processed on the dieand carrier wafer using standard lithographic processes with structuressimilar to those described above and shown in FIGS. 26 and 27 such thatlaser devices on each dice are individually addressable and can bedriven separately. Facets would be fabricated either with a dry etchprocess (e.g. RIE, ICP or CAIBE) or by cleaving the carrier wafer. Aftersingulation, the resulting laser chip would have an effective emittersize similar to a standard laser diode device (i.e. less than 200microns) and would allow for red-green-blue color mixing. Multiple laserdie for each color could be transferred from multiple substrates,allowing for engineering of the speckle of each color. Such an RGB laserchip would greatly simplify the design and fabrication of a laser lightsource for projection and display applications. The laser devices wouldbe in close proximity (i.e. within 10-100 microns) leading to the needfor smaller optics. The laser devices would all be aligned to eachother, thereby reducing fabrication cost by removing the need toseparately align all emitters with the system optics.

An example of a red, green and blue light emitting optoelectronic deviceof this kind is shown in FIG. 21 for laser die. This RGB laser chipconsists of a carrier wafer 310, which can be composed of a number ofdifferent materials. Bonded to the carrier are three laser die 316,which each have a single laser device structure fabricated into them.The laser die are bonded to the carrier p-side down, and the bond padsform a common p-electrode 314. Electrical passivation layers (e.g.silicon dioxide, silicon nitride or the like) are deposited selectivelyusing a lithographic process and separate n-electrodes 311, 312 and 313are subsequently deposited. FIG. 21 shows a single laser chip aftersingulation, however due to the nature of the bonding process, manylaser chips can be fabricated in parallel on carrier wafers of arbitrarysize. The choice of the carrier wafer material is dependent on theapplication. In some embodiments, where optical powers for the laserdevices are low (below 100 mW), Si may be chosen as the carrier waferdue to the availability of large-diameter, low-cost Si wafers. Inembodiments where emitted power is large (e.g. greater than 1 W) and thethermal resistance of the device must be kept low to ensure highefficiencies, SiC would be an appropriate carrier wafer material due tothe high thermal conductivity of SiC.

In some embodiments, the RGB laser or SLED chip is formed by bonding theoptoelectronic die such that they partially or fully overlay oneanother. Such a configuration is shown in FIG. 22 for laser die. Herethe ridge-side electrical contact also forms part or all of the bondinglayer for the next laser die. By including passivating layers such assilicon dioxide, silicon nitride or the like current can be restrictedto flow only through the ridges. This laser chip configuration can beoperated as a multi-terminal device without current matching between thelaser devices. This configuration has the advantage of allowing for thelaser ridges to be spaced very closely in the lateral direction, andthough shown in FIG. 21 with ridges that do not overlap otherconfigurations are possible, including ones where the ridges overlay oneanother. For example, in a low power device with 2 micron wide ridgesand 5 micron tolerances on lateral alignment of the lithographicprocess, it would be possible for the emitters to span a total lateraldistance of less than 16 microns, or roughly 10% of a typical GaN laserdie. In the same low power device, with epi die thicknesses of 2 micronsand bonding layer thickness of 1 micron the vertical span of the RGBemitter would be only 8 microns total. It is unlikely that thisconfiguration would be used for a high power part as it would bedifficult to extract heat efficiently from the upper most die.

In some embodiments according to the present invention, the RGB laser orSLED chip is formed by bonding the optoelectronic die to a carrier waferthat is itself an epitaxial device wafer. In an example, optoelectronicdie from a blue-emitting, AlInGaN-based laser device wafer are bonded toa GaAs wafer containing epitaxial device layers comprising ared-emitting, AlInGaP-based laser device. Optoelectronic die from agreen-emitting, AlInGaN-based laser device wafer are then bonded to thesame carrier wafer. The dice are arranged such that they are bonded inclose proximity to the laser stripe of the red-emitting AlInGaP laserdevice. This is a preferred embodiment for very low-power RGB emittingdevices emitting at less than 100 mW, where thermal conductivity of thesubstrate need not be optimized. Such a configuration would be lesspreferred for higher power emitters.

In some embodiments according to the present invention the integratedRGB laser or SLED device is optically coupled to a micro-display elementto form an RGB light engine. A preferred micro-display is a MEMSscanning mirror or “flying mirror”, but could also be a digital lightprocessing (DLP) chip or a liquid crystal on silicon (LCOS). In apreferred embodiment the RGB chip and micro-display would share a commonsupport member such as submount member comprising a material such as Si,GaAs, AlN, SiC, sapphire, Kovar, diamond, or metal materials such as Cuor CuW. In some examples the red, green, and blue output emission beamsis coupled to a beam shaping optic prior to incidence on themicro-display. The optic could be a collimating lens such as an asphericlens, ball lens, fast axis collimating lens, slow axis collimating lens,other optic types, or some combination of such optics. In someembodiments the common support member is fabricated from the carrierwafer. In alternative embodiments the common support member is anintermediate mechanical support member.

In some embodiments according to the present invention, the carrierwafer is configured to provide added functionality wherein optical orelectrical components are fabricated into the common carrier wafershared by the RGB light sources. Optical components could include one ormore of beam shaping components, one or more lens, reflectors, or eventhe micro-display such as the MEMS scanning mirror itself. In yetadditional embodiments the carrier wafer is configured to provideelectrical functionality such as an integrated circuit or ASIC. Apreferred example of this would be to fabricate at least one of the MEMSscanning mirror or ASIC driver for an integrated RGB light enginewherein the carrier wafer may be selected from Si, SiGe, InP, GaAs, orothers.

According to an embodiment, the present invention provides a projectionapparatus. The projection apparatus includes a housing having anaperture. The apparatus also includes an input interface for receivingone or more frames of images. The apparatus includes a video processingmodule. Additionally, the apparatus includes an integrated RGB laser orSLED source according to this invention. The laser source includes ablue laser diode, a green laser diode, and a red laser diode. The bluelaser diode has a peak operation wavelength of about 430 to 480 nm. Thegreen laser diode has a peak operation wavelength of about 500 nm to 540nm. The red laser diode has a peak operation wavelength of about 630 nmto about 670 nm. The apparatus also includes a laser driver modulecoupled to the laser source. The laser driver module generates threedrive currents based on a pixel from the one or more frames of images.Each of the three drive currents is adapted to drive a laser diode. Theapparatus also includes a MEMS scanning mirror, or “flying mirror”,configured to project the laser beam to a specific location through theaperture resulting in a single picture. By rastering the pixel in twodimensions a complete image is formed. The apparatus includes an opticalmember provided within proximity of the laser source, the optical memberbeing adapted to direct the laser beam to the MEMS scanning mirror. Theapparatus includes a power source electrically coupled to the lasersource and the MEMS scanning mirror. Many variations of this embodimentcould exist, such as copackaging the integrated RGB laser or SLED sourcewith the MEMS mirror or integrating the MEMS mirror onto the carrierwafer. The outputs from the blue, green, and red laser diodes could becombined into a single beam.

According to another embodiment, the present invention provides aprojection apparatus. The apparatus includes a housing having anaperture. The apparatus includes an input interface for receiving one ormore frames of images. The apparatus includes an RGB laser or SLEDsource according to the present invention. The laser source includes ablue laser diode, a green laser diode, and a red laser diode. The bluelaser diode has a peak operation wavelength of about 430 to 480 nm. Thegreen laser diode has a peak operation wavelength of about 500 nm to 540nm. The red laser diode has a peak operation wavelength of about 630 nmto about 670 nm. The laser source is configured produce a laser beam bycombining outputs from the blue, green, and red laser diodes. Theapparatus includes a digital light processing (DLP) chip comprising adigital mirror device. The digital mirror device including a pluralityof mirrors, each of the mirrors corresponding to one or more pixels ofthe one or more frames of images. The apparatus includes a power sourceelectrically coupled to the laser source and the digital lightprocessing chip. Many variations of this embodiment could exist, such ascopackaging the integrated RGB laser or SLED source with the DLP chip.The outputs from the blue, green, and red laser diodes could be combinedinto a single beam.

In certain embodiments, the present invention provides a liquid crystalon silicon (LCOS) projection system. In an example, a green laser diodeprovides green laser light to the green LCOS; a blue laser diodeprovides blue laser light to a blue LCOS; and a red laser diode providesred laser light to a red LCOS. Each of the LCOS is used to form imagesin a predetermined single color as provided by its corresponding laserdiode, and the single-colored image is combined by the x-cube component.The combined color image is projected onto the lens. In an alternativeLCOS embodiment, the present invention provides a projection system witha single LCOS panel. The integrated red, green, and blue laser diodes orSLEDs are aligned where red, green, and blue laser beams are collimatedonto a single LCOS. The laser diodes or SLEDs are pulse-modulated sothat only one laser diode or SLED is power at a given time and the LCOSis lit by a single color. It is to be appreciated that since coloredlaser diodes are used, LCOS projection systems according to the presentinvention do not need beam splitter that split a single white lightsource into color beams as used in conventional LCOS projection systems.In various embodiments, one or more laser diodes or SLEDs used in thesingle LCOS projection system are characterized by semi-polar ornon-polar orientation. In one embodiment, the laser diodes aremanufactured from bulk substrate. In various embodiments, ferroelectricliquid crystal on silicon (FLCOS) systems can be deployed.

In some embodiments alternative wavelength laser devices or SLED devicesare integrated onto the same chip as a red wavelength device, a bluewavelength device, a green wavelength device or a combination of red,blue, and green wavelength devices. Alternative wavelength devices couldinclude ultra-violet devices operating in the 200 to 380 nm range formedusing gallium and nitrogen containing material, violet devices operatingin the 380 to 425 nm range formed using gallium and nitrogen containingmaterial, infrared devices operating in the 700 to 1650 nm range formedusing gallium and arsenic containing material or indium and phosphorouscontaining material. In such alternative embodiments variousfunctionalities could be combined such as visible emitting devices fordisplay, illumination, or communication, and/or infrared emittingdevices for illumination or communication, and/or ultra-violet emittingdevices for illumination or communication.

In preferred embodiments of the present invention, the integratedmulti-color light source such as an RGB laser diode or SLED device isincluded in projection display technologies. In one example, scanningmirror micro-displays are combined with the light source to create ascanning mirror projector. A conventional example of a scanning mirrorprojector using light sources of three colors is shown schematically inFIG. 25 a.

In principle, multiple (for full color projection, at least three ormore), separate color images are generated and they are combined tosuperimpose on each other with the precision of less than one imagingpicture element (pixel) and without any differences in orientation ofthese multiple images. Consequently, the alignment of optical components(these elements can be light sources themselves, collimating lenses,light combining elements, etc.) is extremely difficult, time consumingand costly. Each optical engine system requires its own unique alignmentbecause of variability between optical components and their positions.

According to the present invention tightly integrated multiple colorlaser diode or SLED light sources can be positioned on the same chipwithin, for example, 200 um, 100 um, or 50 um, or less. The emissionapertures from these different colors sources can be aligned withrespect to each other using lithographic methods for precision below 10um, 5 um, 3 um, or 1 um. The tight spacing of the different color lightsources along with the relatively precise alignment of the emissionapertures can enable a drastically simplified optical system includingthe number of components, types of components, and the alignmentprocess. In some embodiments of the present invention, subsequent to thealignment and positioning of the optical components an image correctionprocess is performed. For example, the separate static color images canbe captured, their position and rotation determined with respect to eachother, and then an electronic processing function with specifiedalgorithms is employed to adjust the spatial resolution of differentimages and their projection so that they superimpose with better thanpixel accuracy and no discernable rotation.

According to an example, a conventional (prior art) projection apparatusis shown in FIG. 25a . The projection apparatus includes the opticalprojection engine 110 and the video electronics module 150. The opticalengine 110 comprises of light sources, optical components and aMicro-Electro-Mechanical Systems (MEMS) or conventional scanning mirror160. The optical engine 110 can be enclosed in the housing having anaperture that allows the light beam from the engine to generateprojected image on the screen 170.

The optical projection engine 110 includes laser sources, in particulara blue laser diode 131, a green laser diode 132, and a red laser diode133. The blue laser diode 131 is fabricated on a nonpolar or semipolaroriented Ga-containing substrate and has a peak operation wavelength ofabout 430 to 480 nm, although other wavelengths can be used. The greenlaser diode 132 is fabricated on a nonpolar or semipolar orientedGa-containing substrate and has a peak operation wavelength of about 490nm to 540 nm. The red laser 133 could be fabricated from AlInGaP withwavelengths 610 to 700 nm. The laser sources are configured to produce amulticolor laser beam by combining outputs from the blue, green, and redlaser diodes by collimating these lasers with the collimating lenses121, 122 and 123 respectively and by combining them into a singlemulticolor beam using combiners 142 and 143, such as dichroic mirrors ordichroic cubes. The combined beam is directed to the scanning mirror or“flying mirror” 160, configured to project the laser beam to a specificlocation through the aperture resulting in three color beams withmodulated light intensities. By rastering the mirror in two dimensionswith a single biaxial, bidirectional mirror or two uniaxial mirrors, acomplete image can be formed.

The apparatus also includes a video input interface for receiving one ormore frames of images from video source 155. The electronics module 150includes a display controller 151 that converts the normal video streamsinto the waveforms required to drive three light sources insynchronization with the scanning mirror 160, using the servo controller153. The electronics module 150 also includes a laser driver module 152coupled to the laser sources 131-133. The laser driver module generatesthree drive currents based on a video input and display controllermodule from the one or more frames of images. Each of the three drivecurrents is adapted to drive laser diodes 131-133. The electronicsmodule 150 may also include safety monitor 154 and power monitor 155that keep track of where the scanning beam is directed and monitor theoptical engine power so that inadvertent exposure into the eyes ofobservers is avoided in high power operation. The apparatus alsoincludes a power source (not shown) electrically coupled to the lasersources 131-133, the scanning mirror 160 and electronics module 150.

When the light sources are separated by small distances such as in themulti-color light source according to this invention, then no colorcombiners are required. The small separation of the light sources can beaccomplished in particular with integrated fabrication of light sourcesand integrated optical components, such as collimated lenses. Theseparation of integrated light sources can be down to tens to hundredsof microns. In such cases, the combining optics is not needed and theinherent positioning differences can be corrected with the electronicprocessor.

Apart from lower cost of the engines due to significant reduction of theoptical components, the alignment of the engine is simplified oreliminated. Consequently, the alignment costs, that represent the majorcontribution to the cost of the optical engines, are significantlyreduced or eliminated. The light intensity losses from back reflectionsand scattering at the interfaces are also reduced, leading to improvedoptical efficiency of the whole engine.

The projection display according to this invention is shown in FIG. 25b. Many components have the same or similar functionality as thoseoutlined in FIG. 25a and are described in the description of FIG. 25a .Here we focus only on the differences between the conventional anddisclosed projection displays. The three lasers 231, 232 and 233 areclosely spaced and integrated with the light beam collimating opticselement 220. No light combining optics is required and no activealignment of collimating lenses and other optical elements is used,resulting with Red, Green and Blue (RGB) beams that are not fullysuperimposed and have differences in beam directions in two dimensions.The electronics module 250 has the conventional display controller 251,servo controller 253, optional safety monitor 254, but additionallyincludes electronic video processor 256 that modifies the video streamsto correct the modulation of the laser drivers 252 in order to accountfor the misalignment and differences between directionality of the RGBbeams described below.

Due to the finite separation of the tightly spaced multi-color emitters(lasers), three color images might have the positions and orientationmisaligned, as schematically indicated in FIG. 25c . Taking the greenimage 310 as the reference, the red image 320 and blue image 330 aredisplaced and rotated with respect to the green image. This misalignmentwill be larger for discrete light sources (e.g. lasers) and discreteoptical components and smaller for integrated light sources such themulti-color light source according to this invention wherein the lasersor SLEDs are integrated onto single chips with integrated optics.However in all practical cases the misalignment will be larger thanfraction of the size of the picture element (pixel). For these reasons,complex and sensitive alignment of optical engine hardware is requiredor in embodiments according to this invention, device modificationsdescribed above and software and method modifications described beloware used to address this challenge.

In one embodiment, after the optical engine assembly, multiple (for thefull color three or more) color images 310-330 are separately capturedby high resolution color camera with the resolution exceeding that ofthe displayed images, at least by a factor of two in each direction. Asan example, if the desired image is supposed to have high definitionresolution of 1920×1080, it is useful to employ the color (or black andwhite with multiple external filters) camera with at least 4M imagingsensors. The above step and subsequent steps are captured in the methodflowchart in FIG. 25 d.

The key steps of the method are:

-   -   1. Assembly of the optical engine 410 with passive alignment        features but without active alignment.    -   2. Capture of individual color images 420 with high spatial        resolution color camera or black and white camera.    -   3. Determination of displacements and rotation of images 430        with respect to reference image, such as green image. In this        case, displacements and rotations of red and blue images with        respect to the green image are determined. Subsequently, the        image analysis software is applied to these multiple images and        displacements and rotation of red and blue (or more) color        images with respect to the first green image are determined. The        electronic video processor of the modified optical engine shown        in FIG. 25b with correcting algorithms is provided with the        parameters needed to move and orient images to the overlap area        and correct their rotational misalignment. Implementation        involves modification of the driving waveforms provided into the        driving electronics for the light sources.    -   4. Application of algorithms 440 to superimpose all single color        images.    -   5. Test of the quality of the alignment 450 by capturing the        single color images and complete white image.

If the software alignment is good, the video streams modified with thevideo processor and algorithms are employed to test the image qualityusing specialized color patterns. It the software alignment is notadequate, the alignment process is repeated until satisfactory resultsare obtained.

When the optical engine is used without increase of the size of thepixel array, then only images with lower resolution could be produced.In the example in FIG. 25c , the image size would correspond only to thearea 340 shown in heavy black, while the correct images should have thesize corresponding to the area defined by the green rectangle 310. Inorder to include this correction, the wider scanning angle of thescanning mirror and larger pixel array has to be created for multiplecolors. Without increased resolution, color images could be superimposedon each other by using the video processor and appropriate algorithmswith the displacement and rotation corrections, corresponding to eachparticular engine, but the size and spatial resolution of the resultingimage would be reduced, corresponding only to the area of the completeoverlap of all color, uncorrected images, shown with the heavy blackrectangle 340 in FIG. 25 c.

When the resolution of the images is properly increased, the full imageresolution can be maintained. In such a case, there are areas 350 beyondthe overlapping regions, where some light sources are turned off. Therequired increase in resolution is dependent on the degree of positionaland rotational misalignment. The larger these initial misalignments are,larger increases of resolution are required.

The correction factors are unique for each optical engine, as theydepend on misalignment of the light sources and optical components ofthe given engine. The correction factors can stay the same for thelifetime of the projection display or lighting system, but they can bedynamically adjusted, if necessary. When temperature variations inducesignificant changes in the spatial or angular position of color beams(leading to the shifts comparable with the pixel size or greater),temperature based adjustments can be implemented. The typicaltemperature coefficients can be determined on several engines. Withtemperature sensor incorporated in each engine, based on the actual,measured temperature, correction coefficients can be tuned formaintaining of the best image quality even when large temperature swingsoccur. Once good image quality is achieved, the parameters specific toeach optical engine are stored in nonvolatile memory and then usedcontinuously in steps 495 to correct video waveforms.

The example of addressing waveforms for modulation of light intensitiesof different light sources is shown in FIG. 25e . At the beginning ofthe scan of the scanning mirror for the first row, only one color, suchas green might be on, while the remaining colors, such as red and blueare off. This is schematically illustrated in FIG. 25e by comparing theoriginal green driving waveform with green current driver supplyingcurrent pulses 510, 511, 512, . . . to the green laser at the beginningof the first row, until the last pulse of the first row 530 for thegreen laser. The durations of the current pulses per each pixel aredt=T/N where t is the frame time and N is the number of pixels in theimage. The corrected green driver current waveform in (ii) of FIG. 25eis the same as the original waveform in (i) of FIG. 25e , however, thedurations of the pulses are shortened by δ, thus becoming dt-δ. Thevalue of δ is dependent on the optical hardware misalignment determinedin the capture of three color image in the steps 420 and 430 in FIG. 25d. The value of δ can be selected from the largest typical misalignmentof different engines or alternatively, it can be adjusted according tothe misalignment of each optical engine. The green driver waveform in(i) of FIG. 25e starts with driver currents being zero for severalcycles depending on the degree of misalignment, followed by the currentpulses 520, 521, 522 which have the same magnitude as pulses 510, 511,512, . . . but shorter duration dt-δ. At the end of the row, the pulse540 is the same in magnitude as original pulse 530, but it is againshorter and it ends earlier, as indicated in (ii) of FIG. 25 e.

The blue and red color driver waveforms are generated in parallel,simultaneously with the green driver waveform. Illustrating the exampleof the blue driver with the original driver waveform in (iii) of FIG.25e with pulses 570, 571, 572 at the beginning of one row, and thepulses 590, 591, 592 at the end of that row, the corrected waveforms areshown in (iv) of FIG. 25e with waveform having pulses 580, 581, . . .585 at the beginning of the row scan and pulse 593, 594, 595 at the endof the first row of blue waveform. Blue color current is turned on atthe right time at 580, based on experimentally determined parameters andalgorithmically adjusted driver modulation. Finally at the later time,the third color is also added by appropriate driving waveforms. At theend of the scan of the first row, the drivers are turned at differenttimes, again based on the misalignment.

When another row of the video frame is addressed, the time shifts aredifferent from the first row, as shown by pulses 550 in the originalwaveform and corrected pulses 560, 561, 562, 563 . . . for green image.Also, for the illustrated blue row, time shifts and intensities ofpulses are different from adjustments in the first row, as shownschematically by comparison of original blue driver pulses 596 and thecorrected pulses 597, 598, etc.

As illustrated in FIG. 25e , the resulting driving waveforms are notsimply shifted in time. In fact, video data from the adjacent lines arelikely used to yield the correct superposition of the same color pixelsas in the original image. The transforms of two dimensional arrays ofmultiple datasets, accounting for displacements and rotations, areemployed to convert the original video trains into the corrected videotrains.

When the light sources are separated by small distances such as in themulti-color light source according to this invention, then no colorcombiners are required. The small separation of the light sources can beaccomplished in particular with integrated fabrication of light sourcesand integrated optical components, such as collimation lenses. Theseparation of integrated light sources can be down to tens to hundredsof microns. In such cases, the combining optics is not needed and theinherent positioning differences can be corrected with the above videoprocessing module. Apart from lower cost of the engines due tosignificant reduction of the optical components, the alignment of theengine is simplified or eliminated. Consequently, the alignment costs,that represent the major contribution to the cost of the opticalengines, are significantly decreased or eliminated. The light intensitylosses from back reflections and scattering at the fewer interfaces inthe disclosed optical engine in FIG. 25b are also reduced, leading toimproved optical efficiency of the whole system.

With the above described corrections implemented, the images will havethe correct spatial resolution and image quality as demonstrated by thefull color images over the full area of the original green image 310.With the described embodiments, the hardware simplifications andassembly and alignment cost reductions are traded for increasedcomplexity of the video processor and software.

The embodiments are described above for the full color systems withthree light sources, however, the same approach is extendable to thesystems with different number of light sources for one, two or multiplecolor lighting. It can be used with two colors or with monochromaticsystem when the multiple light sources of one color are used or the fullcolor system where the multiple light sources are used for certaincolors and total number of light sources exceeds three sources.

Embodiments of this invention facilitate the production of laser devicesat extremely low costs relative to traditional production methods. FIG.14 shows the process flow and material inputs for a traditional laserdiode fabrication process. A substrate is provided. A laser device isgrown epitaxially on the substrate. The wafer is then processed on boththe epitaxial, i.e. front, and back sides to produce the laser dioderidge and electrical contacts. The wafer is then thinned to facilitatecleaving. The thinning process consumes most of the substrate,converting it into slurry. The thinned wafer is then cleavedperpendicular to the laser ridges to produce front and back facets, andthe resulting linear array, or “bar”, of laser devices can then betested for quality assurance purposes and multiple bars can be stackedfor coating of facets with highly reflective or anti-reflective coatingsdepending on the application of the laser. Finally, the laser devicesare singulated from the bar and attached to a submount, which providesan electrically insulating platform for the die to sit on, allowselectrical access to the substrate side of the laser device, and whichis soldered or otherwise adhered to the laser packaging or heat sink.

In the traditional work flow, laser devices are processed on theepitaxial wafers at a density fixed not by the size of the laser ridge,but by the area of material needed to handle and electrically connect tothe device. This results in relatively high processing costs per device,as the number of devices per wafer, especially on commercially availableGaN substrates which tend to be small, is low. Moreover, aftersingulation of laser devices a serial pick and place process followed bya bonding process must be carried out twice; once to bond the laser dieto a submount and a second time to bond the submount to the laserpackage.

The improved fabrication process enabled by this invention is shown inFIG. 15. A substrate is provided, which can be either a virgin substrateor one reclaimed after previous use. The epitaxial layers are grown onthe substrate and then processed into die for transfer. Because the diecan be bonded to a carrier at a larger pitch than they are found on thesubstrate, the number of die that can be prepared on the substrate isquite large. This reduces the cost of processing per die. FIG. 16 showsthe number of devices that can be processed on substrate of variousdimensions. The ridge length is assumed to be 1 mm, and the pitchbetween ridges is varied from about 50 to about 3000 microns.Practically, the pitch cannot be much smaller than about 100-150 micronsas the die must be large enough to both handle and support wire bonds.As an example, on a 1 inch diameter substrate using a standard workflow, with die pitches on the order of about 150 microns nearly 3400devices can be made. Using this epi transfer process die pitches can beshrunk to about 50 microns or less, with die width determined by thelaser ridge width. As an example, for a 1 inch diameter substrate usingthe epi transfer work flow, with die pitches on the order of about 50microns, over 10000 die can be made per wafer. This reduces both thecost per die for process as well as the cost per die for the epitaxialprocess and substrate.

When the die are transferred to a carrier wafer a certain fraction ofdie are transferred in each bonding step. This fraction is determined bythe relative sizes of the pitch of die on the substrate (i.e. firstpitch) and the pitch on the carrier (i.e. second pitch). FIG. 17 showsseveral examples of bonding configurations for small substrates on a 100mm diameter round carrier wafer. This is one example of bondingconfigurations where the carrier wafer is not fully populated with die,though it is possible to fill the carrier more completely. For example,die from limited regions of a substrate could be bonded at the edge ofthe carrier, with the unbonded region of the substrate extending off theedge of the carrier. As another example, the carrier could be partiallypopulated with mesas, and then a second set of bond pads could bepatterned on the carrier with a larger thickness than the first set ofbond pads, thereby providing clearance to bond in the unoccupiedpositions between the original bonds.

This also has a positive benefit on the cost of processing. FIG. 18shows a table of the number of devices that can be transferred to a 100mm diameter carrier wafer. It is assumed that the die pitch on thesubstrate is about 50 microns, and the die pitch on the carrier, i.e.the second pitch, is varied. It can be seen that number of devices thatcan be processed in parallel on a 100 mm diameter carrier whentransferred from 1 inch diameter wafers is approximately 30000 when thesecond pitch is 150 microns. This is 10 times as high as the number ofdevices that can be processed on a 1 inch diameter substrate with abouta 150 micron pitch. In this example, the second pitch is about 3 timesas large as the first pitch, making it possible to make three transfersfrom the substrate to the carrier. In this example all of the die frommore than one substrate could be transferred to the carrier. In someembodiments, the second pitch is around 1 mm or larger, requiring moretransfers than positions available on the carrier. In another embodimentthe first and second pitch are such that the number of positionsavailable on the substrate to bond too are equal to the number of mesason the substrate.

Once the carrier wafer is populated with die, wafer level processing canbe used to fabricate the die into laser devices. For example, in manyembodiments the bonding media and die will have a total thickness ofless than about 10 microns, making it possible to use standardphotoresist, photoresist dispensing technology and contact andprojection lithography tools and techniques to pattern the wafers. Theaspect ratios of the features are compatible with deposition of thinfilms, such as metal and dielectric layers, using evaporators, sputterand CVD deposition tools. In some embodiments front facets could beprotected with thick dielectric layers while and epoxy is dispensedoverlaying the laser die and carrier chip, encapsulating the laserdevice and sealing it from contaminants and environmental factors thatmight degrade performance. Here, then, you would have a truly chip-scalelaser package, fabricated on a wafer level using standard semiconductormanufacturing techniques and equipment, which, once singulated from thecarrier wafer, would be ready to install in a laser light system.

Moreover, the substrate can be recycled by reconditioning the surface toan epi-ready state using a combination of one or more of lapping,polishing and chemical mechanical polishing. Substrate recycling wouldrequire removal of any variation in wafer height remaining from thetransfer process. This removal would be achieved by lapping the wafersurface with abrasive slurry. The abrasive media would be one or more ofsilica, alumina, silicon carbide or diamond. Progressively smallerparticle sizes would be used to first planarize the wafer surface andthen remove subsurface damage to the crystal induced by the initialremoval process. Initial particle sizes in the range of about 1-10microns could be used, followed by about 0.1-100 micron. The final stepwould be a chemical mechanical polish (CMP), typically comprising ofcolloidal silica suspended in an aqueous solution. The CMP step wouldrestore an “epi ready” surface typically characterized by low density ofcrystalline defects and low RMS (<about 10 nm) roughness. Final cleaningsteps may include use of a surfactant to remove residual slurry as wellas cleans to remove contaminants such as exposure to acidic solutions(for example HCl, HCl:HNO₃, HF and the like) and exposure to solvents(for example isopropanol, methanol and acetone). We estimate a substratecould be recycled more than 10 times without significant change inthickness. In some embodiments, the epitaxial layers include thickbuffers that are subsequently removed by the recycling process, therebyleaving the net thickness of the substrate unchanged.

As an example, using basic assumptions about processing and materialcosts, such as recycling substrates 10 times and availability of largearea (i.e. greater than 2 cm²) GaN substrates) it can be shown thatblue-light emitting, GaN-based laser device costs below $0.50 peroptical Watt and could be as low as $0.10 per optical Watt bytransferring die from 4.5 cm² GaN substrates to 200 mm SiC carriers.This price is highly competitive with state of the art light emittingdiodes and could enable widespread penetration of laser light sourcesinto markets currently served by LEDs such as general lighting.

In an example, the present invention discloses Integrated Low-costLaser-based Light Sources based on integrated arrays of high-efficiency,low-cost blue laser diodes and densified wavelength-convertors, whichare capable of producing source brightness levels which exceed that ofLED-based sources, while maintaining the advantages of high energyefficiency and long product lifetimes expected from solid state lightingsources. Further, lighting systems based on Integrated Low-costLaser-based Light Sources are disclosed, which provide productperformance exceeding LED-based products.

In example, we discovered that conventional GaN-based solid statelighting sources and products are limited due to source brightness,defined as the light density per unit of solid angle. With considerationof the optical concept of etendue, it is well known that the brightnesscannot be increased in an optical assembly; hence the brightness orintensity of a lighting system is limited by the brightness of thesource. For GaN LED light sources, there is a well-known phenomenonknown as “droop” where the energy efficiency drops rapidly with anincrease in input power density. Due to the difference in carrierrecombination mechanism between LEDs (spontaneous emission) and laserdiodes (stimulated emission), this phenomenon of efficiency droop is notseen in GaN laser diodes. This is displayed in FIG. 29 where the energyconversion efficiency is schematically illustrated for GaN-based LEDsand laser diodes. It is clear that laser diodes can achievesignificantly higher conversion efficiency than LEDs when operated athigh power-density. Additionally, the light emission pattern from andLED is isotropic over the surface of the device, whereas for a laserdiode, the light is emitted from a small exit facet in a well-definedcoherent beam. The emitting area for a laser diode is several orders ofmagnitude smaller, resulting in source brightness, which is severalorders of magnitude higher than for LEDs. This advantage in sourcebrightness may be maintained through an optical system, e.g. a lightbulb or fixture, resulting in an inherent advantage for laser diodes.

In an example, a brief summary of wavelength conversion materials suchas phosphor has been provided below for LED in reference to laser diode.For LEDs, the phosphor is as large as or larger than the LED source. Forlaser diode modules, the phosphor size is independent of the die size,and may be pumped from several laser diode sources. For LEDs, thephosphor is located on or around the die. The thermal dissipation ispoor, or directly through the LED die. For laser diodes the phosphor isadjacent or remote the die, enabling it to be well heat sunk, enablinghigh input power density. For LEDs, the phosphor emits back into the LEDdie resulting in significant efficiency and cost trade-off. For laserdiode modules, the environment of the phosphor can be independentlytailored to result in high efficiency with little or no added cost.Phosphor optimization for laser diode modules can include highlytransparent, non-scattering, ceramic phosphor plates. Decreasedtemperature sensitivity can be determined by doping levels. A reflectorcan be added to the backside of a ceramic phosphor, reducing loss. Thephosphor can be shaped to increase in-coupling and reduce backreflections. Of course, there can be additional variations,modifications, and alternatives.

In an example, the present invention provides a laser-based light modulecontaining one or more low-cost laser diodes; one or more wavelengthconversion elements; and a common substrate providing electrical andthermal connections between the laser diodes and the wavelengthconversion element. In an example, the low-cost laser diodes arecomposed of epitaxial material which contains GaN, AlN, InN, InGaN,AlGaN, InAlGaN, AlInGaN, combinations thereof, and the like. In anexample, the emission wavelength of the low-cost laser diode is in therange of 200 nm and 520 nm, among others.

In an example, the preferred emission wavelength of the low-cost laserdiode is in the range of 440 nm and 460 nm. In other embodiments theemission wavelength is in the 395 nm to 420 nm range, in the 420 nm to440 nm range, or in the 460 nm to 480 nm range. In an example, thewavelength conversion element is phosphor material. In an example, thewavelength conversion element is a phosphor, which contains garnet hostmaterial and a doping element. In an example, the wavelength conversionelement is a phosphor, which contains a yttrium aluminum garnet hostmaterial and a rare earth doping element, and others. In an example, thewavelength conversion element is a phosphor which contains a rare earthdoping element, selected from one or more of Ce, Nd, Er, Yb, Ho, Tm, Dyand Sm, combinations thereof, and the like. In an example, thewavelength conversion element is a high-density phosphor element. In anexample, the wavelength conversion element is a high-density phosphorelement with density greater than 90% of pure host crystal.

In an example, the light emitted from the one or more low-cost laserdiodes is partially converted by the wavelength conversion element. Inan example, the partially converted light emitted generated in thewavelength conversion element results in a color point, which is whitein appearance.

In an example, the color point of the white light is located on thePlanckian blackbody locus of points. In an example, the color point ofthe white light is located within du‘v’ of less than 0.010 of thePlanckian blackbody locus of points. In an example, the color point ofthe white light is preferably located within du‘v’ of less than 0.03 ofthe Planckian blackbody locus of points.

In an example, the common substrate is a solid material with thermalconductivity greater than 100 W/m-K. In an example, the common substrateis preferably a solid material with thermal conductivity greater than200 W/m-K. In an example, the common substrate is preferably a solidmaterial with thermal conductivity greater than 400 W/m-K. In anexample, the common substrate is preferably a solid material withelectrical insulator with electrical resistivity greater than 1×10^6ohm-cm. In an example, the common substrate is preferably a solidmaterial with thin film material providing electrical 1×10^6 ohm-cm. Inan example, the common substrate selected from one or more of Al₂O₃,AlN, SiC, BeO and diamond. In an example, the common substrate ispreferably comprised of crystalline SiC. In an example, the commonsubstrate is preferably comprised of crystalline SiC with a thin film ofSi3N4 deposited onto the top surface. In an example, the commonsubstrate contains metal traces providing electrically conductiveconnections between the one or more low-cost laser diodes. In anexample, the common substrate contains metal traces providing thermallyconductive connections between the one or more low-cost laser diodes andthe common substrate.

In an example, the one or more low-cost laser diodes are attached to themetal traces on the common substrate with a solder material. In anexample, the one or more low-cost laser diodes are attached to the metaltraces on the common substrate with a solder material, preferably chosenfrom one or more of AuSn, AgCuSn, PbSn, or In.

In an example, the wavelength conversion material is attached to themetal traces on the common substrate with a solder material. In anexample, the wavelength conversion material is attached to the metaltraces on the common substrate with a solder material, preferably chosenfrom one or more of AuSn, AgCuSn, PbSn, or In.

In an example, the one or more low-cost laser diodes and the wavelengthconversion material is attached to the metal traces on the commonsubstrate with a similar solder material, preferably chosen from one ormore of AuSn, AgCuSn, PbSn, or In. In an example, two or more low-costlaser diodes are attached to the common substrate with the diodesarranged in an electrically series manner. In an example, the wavelengthconversion element contains an optically reflective material interposedbetween the wavelength conversion element and the thermally conductiveconnection to the metal traces on the common substrate.

In an example, the optically reflective material interposed between thewavelength conversion element and the thermally conductive connection tothe metal traces on the common substrate has a reflectivity value ofgreater than 50%.

In an example the optically reflective material interposed between thewavelength conversion element and the thermally conductive connection tothe metal traces on the common substrate has a reflectivity value ofgreater than 80%. In an example, the optically reflective materialinterposed between the wavelength conversion element and the thermallyconductive connection to the metal traces on the common substrate has areflectivity value of greater than 90%. In an example, the optical beamshaping elements are placed between the low-cost laser diodes and thewavelength conversion element.

In an example, the wavelength conversion element contains geometricalfeatures aligned to each of the one or more low-cost laser diodes. In anexample, the wavelength conversion element further contains an opticallyreflective material on the predominate portion of the edgesperpendicular to the common substrate and one or more low-cost laserdiodes, and where the geometrical features aligned to each of thelow-cost laser diodes does not contain an optically reflective material.In an example, the common substrate is optically transparent. In anexample, the wavelength conversion element is partially attached to thetransparent common substrate. In an example, the wavelength convertedlight is directed through the common substrate. In an example, thewavelength converter contains an optically reflective material on atleast the top surface. In an example, the one or more low-cost laserdiodes and the wavelength conversion element are contained within asealing element to reduce the exposure to the ambient environment. In anexample, the one or more low-cost laser diodes and the wavelengthconversion element are contained within a sealing element to reduce theexposure to the ambient environment.

In an example, the solid-state lighting element containing at least alaser-based light module has a beam shaping element. In an example, thebeam shaping element provides an optical beam where greater than 80% ofthe emitted light is contained within an emission angle of 30 degrees.In an example, the beam shaping element provides an optical beam wheregreater than 80% of the emitted light is preferably contained within anemission angle of 10 degrees. In an example, the form is within thecommonly accepted standard shape and size of existing MR, PAR and AR111lamps. In an example, the solid-state lighting element further containsan integrated electronic power supply to electrically energize thelaser-based light module. In an example, the solid-state lightingelement further contains an integrated electronic power supply withinput power within the commonly accepted standards. Of course, there canbe other variations, modifications, and alternatives.

In an example, a method for manufacturing a lighting device comprising alaser diode device includes providing a substrate having a surfaceregion and forming an epitaxial material overlying the surface region.The epitaxial material may comprise an n-type cladding region, an activeregion comprising at least one active layer overlying the n-typecladding region, and a p-type cladding region overlying the active layerregion. In an example, the method also includes patterning the epitaxialmaterial to form a plurality of dice, each of the dice corresponding toat least one laser diode device, and transferring each of the pluralityof dice to one or more carrier substrates. In an example, the methodalso includes processing at least one of the plurality of dice on atleast one of the carrier substrates, packaging the die with the carriersubstrate, and configuring the die with a wave length conversion elementoptically coupled with the die to emit electromagnetic radiation in awhite light spectrum. The electromagnetic radiation may be partiallyconverted by the wavelength conversion element or fully converted by thewavelength conversion element.

In an example, an optical apparatus includes an epitaxial growthmaterial bonded to a sub-mount device with an interface region on asurface region of the sub-mount device. The epitaxial growth materialmay be characterized by a thickness of less than 10 microns and greaterthan 0.5 micron and detached from a substrate that the epitaxialmaterial was grown on. In an example, at least one laser device isconfigured from the epitaxial growth material. The at least one laserdevice may comprise a laser ridge fabricated in the epitaxial growthmaterial. In an example, a peripheral region of the sub-mount device isconfigured from a singulated carrier to provide the sub-mount device.The peripheral region may be configured from a sawing, scribing andbreaking, or cleaving process. In an example, at least a pair of bondingpads are configured on the sub-mount device to electrically connect tothe laser device and configured to inject current into the laser device.

In an example, an optical apparatus includes a common carrier membercomprising a surface region and a red emitting AlInGaAsP epitaxial laserstructure (RED), a green emitting gallium and nitrogen containing laserepitaxial structure (GREEN), and a blue emitting gallium and nitrogencontaining laser epitaxial structure (BLUE). In an example, the redemitting AlInGaAsP epitaxial laser structure is (RED) is configured ontoand transferred from a gallium and arsenic containing substrate memberonto a first portion of the surface region or a red emitting AlInGaAsPlaser epitaxial structure is formed on the surface region of the commoncarrier member. In an example, the green emitting gallium and nitrogencontaining laser epitaxial structure (GREEN) is configured onto andtransferred from a gallium and nitrogen containing substrate member ontoa second portion of the surface region. In an example, the blue emittinggallium and nitrogen containing laser epitaxial structure (BLUE) isconfigured onto and transferred from a gallium and nitrogen containingsubstrate member onto a third portion of the surface region. In anexample, a red laser device (RED Laser), a green laser device (GREENLaser), and a blue laser device (BLUE Laser) are configured respectivelyfrom the RED, GREEN, and BLUE via processing of the RED, GREEN, and BLUEto form waveguide regions, facet regions, and contact regions.

In an example application of this invention, a RGB laser, SLED or bluelaser chip could be used as a preferred light source for visible lightcommunications (VLC) systems, such as Li-Fi communication systems. VLCsystems are those that use modulation of a visible, UV, infra-red ornear-infra-red light source for data transmission. VLC systems usingmodulation of visible light sources would be an advantageous use of thisinvention for two reasons. Firstly, bandwidth would be higher than thatexpected when using light emitting diodes due to the increase in carrierrecombination rates due to the significant amount of stimulated emissionfound in laser diodes and SLEDs. In LEDs, diode lasers and SLEDs therecombination rate will increase with carrier density, however unlikeSLEDs and diode lasers, which peak in efficiency at relatively highcarrier densities, LEDs peak in efficiency at very low carrierdensities. Typically LED peak efficiency is at carrier densities 2-3orders of magnitude lower than those found at typical SLED or laserdiode operating conditions. Modulation and therefore data transfer ratesshould be significantly higher than those achievable using LEDs.

Moreover, in white-light based VLC sources a violet or blue “pump” lightsource consisting of a LED or laser diode or SLED is used to opticallyexcite or “pump” a phosphor element to produce a broad spectrum coveringwavelengths corresponding to green and red and sometimes blue. Thephosphor derived spectrum and unabsorbed pump light are combined toproduce a white light spectrum. Laser and SLED light sources havesignificantly narrower spectra than blue LEDs; <1.5 nm and <5 nm,respectively as compared to approximately 20 nm for a blue LED. NarrowerFWHMs make separation of the pump light signal from the phosphoremission using notch (i.e. bandpass) filters easier. This is importantbecause though the phosphor derived component of the white light spectracomprises a significant fraction of the total optical power emitted bythe device, the long recombination lifetimes in phosphors result in verylow modulation rates for the phosphor emitted component of the spectra.

In an embodiment, multiple laser die emitting at different wavelengthsare transferred to the same carrier wafer in close proximity to oneanother; preferably within one millimeter of each other, more preferablywithin about 200 micrometers of each other and most preferably withinabout 50 microns of each other. The laser die wavelengths are chosen tobe separated in wavelength by at least twice the full width at halfmaximum of their spectra. For example, three die, emitting at 440 nm,450 nm and 460 nm, respectively, are transferred to a single carrierchip with a separation between die of less than 50 microns and diewidths of less than 50 microns such that the total lateral separation,center to center, of the laser light emitted by the die is less than 200microns. The closeness of the laser die allows for their emission to beeasily coupled into the same optical train or fiber optic waveguide orprojected in the far field into overlapping spots. In a sense, thelasers can be operated effectively as a single laser light source.

Such a configuration offers an advantage in that each individual laserlight source could be operated independently to convey information usingfor example frequency and phase modulation of an RF signal superimposedon DC offset. The time-averaged proportion of light from the differentsources could be adjusted by adjusting the DC offset of each signal. Ata receiver, the signals from the individual laser sources would bedemultiplexed by use of notch filters over individual photodetectorsthat filter out both the phosphor derived component of the white lightspectra as well as the pump light from all but one of the laser sources.Such a configuration would offer an advantage over an LED based VLCsource in that bandwidth would scale easily with the number of laseremitters. Of course, a similar embodiment with similar advantages couldbe constructed from SLED emitters.

In another embodiment an RGB laser or SLED chip is used as a lightsource for projection of images or illumination of objects. Each colorchannel is driven by a current source capable of delivering an RFencoded signal to the emitter. Such an emitter would exhibit the sameadvantages with respect to modulation rate relative to an LED baseddevice while also having three or more channels for transmission of datathat can easily be distinguished using notch filters overphoto-detectors.

In multiple embodiments according to the present invention, the devicelayers comprise a super-luminescent light emitting diode or SLED. In allapplicable embodiments a SLED device can be interchanged with orcombined with laser diode devices according to the methods andarchitectures described in this invention. A SLED is in many wayssimilar to an edge emitting laser diode; however the emitting facet ofthe device is designed so as to have a very low reflectivity. A SLED issimilar to a laser diode as it is based on an electrically drivenjunction that when injected with current becomes optically active andgenerates amplified spontaneous emission (ASE) and gain over a widerange of wavelengths. When the optical output becomes dominated by ASEthere is a knee in the light output versus current (LI) characteristicwherein the unit of light output becomes drastically larger per unit ofinjected current. This knee in the LI curve resembles the threshold of alaser diode, but is much softer. A SLED would have a layer structureengineered to have a light emitting layer or layers clad above and belowwith material of lower optical index such that a laterally guidedoptical mode can be formed. The SLED would also be fabricated withfeatures providing lateral optical confinement. These lateralconfinement features may consist of an etched ridge, with air, vacuum,metal or dielectric material surrounding the ridge and providing a lowoptical-index cladding. The lateral confinement feature may also beprovided by shaping one or more of the electrical contacts such thatinjected current is confined to a finite region in the device. In such a“gain guided” structure, dispersion in the optical index of the lightemitting layer with injected carrier density provides the optical-indexcontrast needed to provide lateral confinement of the optical mode.

SLEDs are designed to have high single pass gain or amplification forthe spontaneous emission generated along the waveguide. The SLED devicewould also be engineered to have a low internal loss, preferably below 1cm⁻¹, however SLEDs can operate with internal losses higher than this.In the ideal case, the emitting facet reflectivity would be zero,however in practical applications a reflectivity of zero is difficult toachieve and the emitting facet reflectivity is designs to be less than1%, less than 0.1%, less than 0.001%, or less than 0.0001% reflectivity.Reducing the emitting facet reflectivity reduces feedback into thedevice cavity, thereby increasing the injected current density at whichthe device will begin to lase. Very low reflectivity emitting facets canbe achieved by a combination of addition of anti-reflection coatings andby angling the emitting facet relative to the SLED cavity such that thesurface normal of the facet and the propagation direction of the guidedmodes are substantially non-parallel. In general, this would mean adeviation of more than 1-2 degrees. In practice, the ideal angle dependsin part on the anti-reflection coating used and the tilt angle must becarefully designed around a null in the reflectivity versus anglerelationship for optimum performance. Tilting of the facet with respectto the propagation direction of the guided modes can be done in anydirection relative to the direction of propagation of the guided modes,though some directions may be easier to fabricate depending on themethod of facet formation. Etched facets provide the most flexibilityfor facet angle determination. Alternatively, a very common method toachieve an angled output for reduced constructive interference in thecavity would to curve and/or angle the waveguide with respect to acleaved facet that forms on a pre-determined crystallographic plane inthe semiconductor chip. In this configuration the angle of lightpropagation is off-normal at a specified angle designed for lowreflectivity to the cleaved facet.

The spectra emitted by SLEDs differ from lasers in several ways. While aSLED device does produce optical gain in the laterally guided modes, thereduced optical feedback at the emitting facet results in a broader andmore continuous emission spectra. For example, in a Fabry-Perot (FP)laser, the reflection of light at the ends of the waveguide limits thewavelengths of light that can experience gain to those that result inconstructive interference, which is dependent on the length of thecavity. The spectra of a FP laser is thus a comb, with peaks and valleyscorresponding to the longitudinal modes and with an envelope defined bythe gain media and transverse modes supported by the cavity. Moreover,in a laser, feedback from emitting facet ensures that one or more of thetransverse modes will reach threshold at a finite current density. Whenthis happens, a subset of the longitudinal modes will dominate thespectra. In a SLED, the optical feedback is suppressed, which reducesthe peak to valley height of the comb in the gain spectra and alsopushes out thresholds to higher current densities. A SLED then will becharacterized by a relatively broad (>5 nm) and incoherent spectrum,which has advantages for spectroscopy, eye safety and reduced speckle.As an example, the well-known distortion pattern referred to as“speckle” is the result of an intensity pattern produced by the mutualinterference of a set of wavefronts on a surface or in a viewing plane.The general equations typically used to quantify the degree of speckleare inversely proportional to the spectral width.

As used herein, the term GaN substrate is associated with GroupIII-nitride based materials including GaN, InGaN, AlGaN, or other GroupIII containing alloys or compositions that are used as startingmaterials. Such starting materials include polar GaN substrates (i.e.,substrate where the largest area surface is nominally an (h k l) planewherein h=k=0, and l is non-zero), non-polar GaN substrates (i.e.,substrate material where the largest area surface is oriented at anangle ranging from about 80-100 degrees from the polar orientationdescribed above towards an (h k l) plane wherein l=0, and at least oneof h and k is non-zero) or semi-polar GaN substrates (i.e., substratematerial where the largest area surface is oriented at an angle rangingfrom about +0.1 to about 80 degrees or about 110-179.9 degrees from thepolar orientation described above towards an (h k 1) plane wherein l=0,and at least one of h and k is non-zero).

As used herein, the term substrate is associated with both GaNsubstrates as well as substrates on which can be grown epitaxially GaN,InGaN, AlGaN, or other Group III containing alloys or compositions thatare used as starting materials. Such substrates include SiC, sapphire,silicon and germanium, among others. Substrate may also refer tosubstrates on which can be grown epitaxially GaAs, AlAs, InAs, GaP, AlP,InP, or other like Group III containing alloys or compositions that areused as starting materials. Such substrates include GaAs, GaP, Ge andSi, among others.

As used herein, the terms carrier or carrier wafer refer to wafer towhich epitaxial device material is transferred. The carrier may becomposed of a single material and be either single crystalline orpolycrystalline. The carrier may also be a composite of multiplematerials. For example, the carrier could be a silicon wafer of standarddimensions, or it could be composed of polycrystalline AlN.

As used herein, the term submount refers to material object to which alaser device is bonded in order to facilitate packaging, bonding to aheat sink and electrical contact. The submount is separate from thesubstrate, carrier wafer and package or heatsink.

As shown, the present device can be enclosed in a suitable package. Suchpackage can include those such as in TO-38 and TO-56 headers. Othersuitable package designs and methods can also exist, such as TO-9 orflat packs where fiber optic coupling is required and even non-standardpackaging. In a specific embodiment, the present device can beimplemented in a co-packaging configuration.

In other embodiments, the present laser device can be configured in avariety of applications. Such applications include laser displays,metrology, communications, health care and surgery, informationtechnology, and others. As an example, the present laser device can beprovided in a laser display such as those described in U.S. Ser. No.12/789,303 filed May 27, 2010, which claims priority to U.S. ProvisionalNo. 61/182,105 filed May 29, 2009 and 61/182,106 filed May 29, 2009,each of which is hereby incorporated by reference herein.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. As an example, the packaged device can include any combination ofelements described above, as well as outside of the presentspecification. As used herein, the term “substrate” can mean the bulksubstrate or can include overlying growth structures such as a galliumand nitrogen containing epitaxial region, or functional regions such asn-type GaN, combinations, and the like. Additionally, the examplesillustrates two waveguide structures in normal configurations, there canbe variations, e.g., other angles and polarizations. For semi-polar, thepresent method and structure includes a stripe oriented perpendicular tothe c-axis, an in-plane polarized mode is not an Eigen-mode of thewaveguide. The polarization rotates to elliptic (if the crystal angle isnot exactly 45 degrees, in that special case the polarization wouldrotate but be linear, like in a half-wave plate). The polarization willof course not rotate toward the propagation direction, which has nointeraction with the Al band. The length of the a-axis stripe determineswhich polarization comes out at the next mirror. Although theembodiments above have been described in terms of a laser diode, themethods and device structures can also be applied to any light emittingdiode device. Therefore, the above description and illustrations shouldnot be taken as limiting the scope of the present invention which isdefined by the appended claims.

REFERENCES

-   1. Holder, C., Speck, J. S., DenBaars, S. P., Nakamura, S. &    Feezell, D. Demonstration of Nonpolar GaN-Based Vertical-Cavity    Surface-Emitting Lasers. Appl. Phys. Express 5, 092104 (2012).-   2. Tamboli, A. Photoelectrochemical etching of gallium nitride for    high quality optical devices. (2009). at    <http://adsabs.harvard.edu/abs/2009PhDT . . . 68T>-   3. Yang, B. MICROMACHINING OF GaN USING PHOTOELECTROCHEMICAL    ETCHING. (2005).-   4. Sink, R. Cleaved-Facet Group-III Nitride Lasers. (2000). at    <http://siliconphotonics.ece.ucsb.edu/sites/default/files/publications/2000    Cleaved-Faced Group-III Nitride Lasers.PDF>-   5. Bowers, J., Sink, R. & Denbaars, S. Method for making cleaved    facets for lasers fabricated with gallium nitride and other noncubic    materials. U.S. Pat. No. 5,985,687 (1999). at    <http://www.google.com/patents?hl=en&lr=&vid=USPAT5985687&id=no8XAAAAEB    AJ&oi=fnd&dq=Method+for+making+cleaved+facets+for+lasers+fabricated+with+gallium+nitride+and+other+noncubic+materials&printsec=abstract>-   6. Holder, C. O., Feezell, D. F., Denbaars, S. P. & Nakamura, S.    Method for the reuse of gallium nitride epitaxial substrates.    (2012).-   7. Hjort, K. Jour. Micromech. Microeng. 6 (1996) 370-375

What is claimed is:
 1. A method for manufacturing an integratedmulti-wavelength light emitting device, the method comprising: providinga first substrate having a first surface region; forming a firstepitaxial material overlying the first surface region, the firstepitaxial material comprising a release region, an n-type claddingregion, a first active region comprising at least one active layeroverlying the n-type cladding region, and a p-type cladding regionoverlying the active region, the first active region being configuredfor emission at a first wavelength; providing a second substrate havinga second surface region; forming a second epitaxial material overlyingthe second surface region, the second epitaxial material comprising arelease region, an n-type cladding region, a second active regioncomprising at least one active layer overlying the n-type claddingregion, and a p-type cladding region overlying the active region, thesecond active region being configured for emission at a secondwavelength; patterning the first epitaxial material and the secondepitaxial material to form a plurality of first epitaxial dice and aplurality of second epitaxial dice overlying the first substrate and thesecond substrate, respectively, each of the plurality of first epitaxialdice and the plurality of second epitaxial dice corresponding to atleast one light emitting device; transferring at least one of the firstplurality of epitaxial dice and at least one of the second plurality ofepitaxial dice from the first substrate and the second substrate,respectively, to a carrier wafer by selectively etching the releaseregion, separating from the substrate each of the epitaxial dice thatare being transferred, and selectively bonding to the carrier wafer eachof the epitaxial dice that are being transferred; and processing thetransferred first epitaxial dice and the second epitaxial dice on thecarrier wafer to form a plurality of light emitting devices capable ofemitting at least the first wavelength and the second wavelength.
 2. Themethod of claim 1, wherein each of the plurality of the epitaxial diceformed on the first substrate and the second substrate is characterizedby a first pitch and a second pitch between each pair of adjacentepitaxial dice, the first pitch and the second pitch being less than adesign width; and wherein each of the transferred epitaxial dice ischaracterized by a third pitch and a fourth pitch between each pair ofadjacent epitaxial dice, the third and fourth pitch being larger thanthe first pitch and the second pitch, respectively, and corresponding tothe design width.
 3. The method of claim 2, wherein each of theepitaxial dice is shaped as a mesa, each of the first pitch and thesecond pitch is between 1 μm and 10 μm, or between 10 micron and 50microns, or between 50 μm and 100 μm, or between 100 μm and 500 μm witha length of 50 μm to 3000 μm; and the patterning comprises an etchingprocess.
 4. The method of claim 2, wherein each of the third pitch andthe fourth pitch is between 50 microns and 200 microns, or between 200microns and 500 microns, or between 500 microns and 1000 microns, orgreater than 1000 microns.
 5. The method of claim 1, wherein the carrierwafer is selected from AlN, SiC, sapphire, Si, GaN, GaAs.
 6. The methodof claim 1, wherein the first substrate and the second substrate aregallium and nitrogen containing materials.
 7. The method of claim 1wherein each of the first wavelength and the second wavelength is in theblue wavelength range to form at least a dual blue wavelength integratedmulti-wavelength light emitting device.
 8. The method of claim 7 whereinthe light emitting device is configured as a laser diode device or aSLED device.
 9. The method of claim 1 wherein the first wavelength isselected from a blue wavelength and the second wavelength is selectedfrom a green wavelength to form at least a blue and green light emittingintegrated multi-wavelength light emitting device.
 10. The method ofclaim 9 wherein the light emitting device is configured as a laser diodedevice or a SLED device.
 11. The method of claim 1, wherein the firstsubstrate is a gallium and nitrogen containing material and the secondsubstrate is a gallium and arsenic containing material.
 12. The methodof claim 1, further comprising: providing a third substrate having athird surface region; forming a third epitaxial material overlying thethird surface region, the third epitaxial material comprising a releaseregion, an n-type cladding region, a third active region comprising atleast one active layer overlying the n-type cladding region, and ap-type cladding region overlying the active region, the third activeregion being configured for emission at a third wavelength; patterningthe third epitaxial material to form a plurality of third epitaxial diceoverlying the third substrate, each of the third epitaxial dicecorresponding to at least one light emitting device; transferring atleast one of the plurality of third epitaxial dice from the thirdsubstrate to the carrier wafer by selectively etching the releaseregion, separating from the substrate the epitaxial dice that are beingtransferred, and selectively bonding to the carrier wafer the epitaxialdice that are being transferred; and processing the transferred firstepitaxial dice, the second epitaxial dice, and the third epitaxial diceon the carrier wafer to form a plurality of light emitting devicescapable of emitting at least the first wavelength, the secondwavelength, and the third wavelength.
 13. The method of claim 12,wherein the first substrate and second substrate are gallium andnitrogen containing materials and the first wavelength is a bluewavelength and the second wavelength is a green wavelength; and whereinthe third substrate is a gallium and arsenic containing material and thethird wavelength is selected from a red wavelength such that theintegrated multi-wavelength light emitting device is configured to emita first blue wavelength, a second green wavelength, and a third redwavelength to form an RGB light emitting device.
 14. The method of claim13, further comprising processing at least one of the first transferredepitaxial dice, the second transferred epitaxial dice, or the thirdtransferred epitaxial dice to form an RGB laser diode device.
 15. Themethod of claim 13, further comprising processing at least one of thefirst transferred epitaxial dice, the second transferred epitaxial dice,or the third transferred epitaxial dice to form an RGB SLED device. 16.The method of claim 1, wherein the carrier wafer is comprised of agallium and arsenic containing material with a third surface region;forming a third epitaxial material overlying the third surface region,the third epitaxial material comprising an n-type cladding region, athird active region comprising at least one active layer overlying then-type cladding region, and a p-type cladding region overlying theactive region, the third active region being configured for emission ata third wavelength; and processing the gallium and arsenic epitaxialmaterial to form light emitting devices emitting the third wavelengthsuch that the integrated multi-wavelength light emitting device emits afirst wavelength, a second wavelength, and a third wavelength.
 17. Themethod of claim 16 wherein the first wavelength is a blue wavelength,the second wavelength is a green wavelength, and the third wavelength isa red wavelength such that the integrated multi-wavelength lightemitting device is an RGB device capable of emitting a red wavelength,green wavelength, and blue wavelength.
 18. The method of claim 1,wherein the optical emission comprising one or more of the wavelengthsemitted from the integrated multiple-wavelength light emitting device isoptically coupled to one or more optical element such as a lens, areflector, an aperture, a fiber optic cable, or a waveguide element. 19.The method of claim 1, wherein each of the first epitaxial material andsecond epitaxial material comprise at least one of GaN, AlN, InN, InGaN,AlGaN, InAlN, InAlGaN, AlAs, GaAs, GaP, InP, AlP, AlGaAs, AlInAs,InGaAs, AlGaP, AlInP, InGaP, AlInGaP, AlInGaAs, or AlInGaAsP.
 20. Themethod of claim 1, wherein the transferring comprises selectivelybonding each of the epitaxial dice that are being transferred to thecarrier wafer, each of the transferred epitaxial dice being coupled to abonding pad on the carrier wafer by one of the plurality of bonds;whereupon each of the plurality of bonds is at least one of metal-metalpairs, oxide-oxide pairs, spin-on-glass, soldering alloys, polymers,photoresists, or wax, and wherein a portion of the epitaxial materialremains intact following the selective etching of the release region.21. The method of claim 1, wherein the selective etching uses a bandgapselective photo-electrical-chemical (PEC) etching of the release regionand/or a compositionally selective wet etching of the release region.22. The method of claim 1, wherein the selective etching selectivelyremoves the release region while leaving an anchor region in tact tosupport the epitaxial dice during the selective bonding, and the anchorregion separates after the selective bonding.
 23. The method of claim 1,further comprising forming a metal material overlying the plurality ofepitaxial dice before the transferring, while leaving exposed one ormore anchor regions, which are configured to selectively break andseparate from each of the epitaxial dice after the selective bonding.24. The method of claim 1, wherein the first and/or second substrate isreclaimed and prepared for reuse after transferring each of epitaxialdice to one or more carrier wafers.
 25. The method of claim 1 whereinforming the multi-wavelength light emitting device comprises forming aridge to provide a lateral waveguide region in an epitaxial mesa andcomprises forming facet regions at ends of an epitaxial mesa to form alaser diode device or SLED device.
 26. The method of claim 1, whereinthe multi-wavelength light emitting device is configured as a multilaser diode device or a multi SLED device and comprises a pair of facetsconfigured from a cleaving process or an etching process on each of themulti laser diode devices or SLED devices; wherein the etching processbeing selected from inductively coupled plasma etching, chemicalassisted ion beam etching, or reactive ion beam etching; wherein atleast one of the pair of facets on the multi laser diode devices or SLEDdevices is configured as an emitting aperture to output a beam light.27. The method of claim 1, wherein the multi-wavelength light emittingdevice is configured as a multi laser diode device or a multi SLEDdevice and comprises multiple emitting apertures; wherein at least oneof the multiple emitting apertures is configured to emit each of themulti wavelengths; and wherein the multiple emitter apertures areconfigured within 1 mm, within 500 um, within, 200 um, within 100 um, orwithin 50 um of each other such that the output beams are closelyspaced.
 28. The method of claim 27 wherein the multi-wavelength lightemitting device is applied to a projection display system apparatusincluding a micro-display selected from a MEMS scanning mirror, DLP, orLCOS micro-display.
 29. The method of claim 28 wherein at least one ofthe collimation or the beam combination of the multiple wavelengthemission is achieved with a single optical element.
 30. The method ofclaim 28 wherein an image correction method is applied to correctdistortions that may result from the spatial displacement of themultiple-wavelength emission sources.
 31. The method of claim 30 whereinthe image correction method comprises an optical camera to capturedisplaced and rotated color images and determine displacement androtation of images of different color with respect to each other; andwherein a video processor applying corrections to the standard videostream in order to increase the spatial resolution of displayed imagesto eliminate misalignment of color images and adjust timing andmodulation of the light source drivers in synchronization with themotion of the scanning mirror.
 32. The method of claim 30 wherein theimage correction method comprises the capturing of multiple color imagesat simultaneously and wherein one of these color images is selected asthe reference image; wherein a calibration or measurement ofdisplacement and rotation of the color images with respect to referencecolor image is performed, and applying, using the calibration ormeasurement, an algorithmic modification of the video streams tomodulate timing and intensity of multiple light sources by theelectronic processor and continuous application of modified drivingwaveforms to light sources to each subsequent video or static image. 33.A method for manufacturing an integrated multi-wavelength light emittingdevice, the method comprising: providing a first gallium and arseniccontaining substrate having a first surface region; forming a firstgallium and arsenic containing epitaxial material overlying the firstsurface region, the first epitaxial material comprising a releaseregion, an n-type cladding region, a first active region comprising atleast one active layer overlying the n-type cladding region, and ap-type cladding region overlying the active region, the first activeregion being configured for emission at a first red wavelength providinga second gallium and nitrogen containing substrate having a secondsurface region; forming a second gallium and nitrogen containingepitaxial material overlying the second surface region, the secondepitaxial material comprising a release region, an n-type claddingregion, a second active region comprising at least one active layeroverlying the n-type cladding region, and a p-type cladding regionoverlying the active region, the second active region being configuredfor emission at a second green wavelength providing a third gallium andnitrogen containing substrate having a third surface region; forming athird gallium and nitrogen containing epitaxial material overlying thethird surface region, the third epitaxial material comprising a releaseregion, an n-type cladding region, a third active region comprising atleast one active layer overlying the n-type cladding region, and ap-type cladding region overlying the active region, the third activeregion being configured for emission at a third blue wavelengthpatterning the first epitaxial material, the second epitaxial material,and the third epitaxial material to form a plurality of first epitaxialdice, a plurality of second epitaxial dice, and a plurality of thirdepitaxial dice overlying the first substrate, the second substrate, andthe third substrate, respectively, each of the-epitaxial dicecorresponding to at least one light emitting device; transferring atleast one of the first plurality of epitaxial dice, the second pluralityof epitaxial dice, and the third plurality of epitaxial dice from thefirst substrate, the second substrate, and the third substrate to acarrier wafer by selectively etching the release region, separating fromeach of the first substrate, the second substrate, and the thirdsubstrate each of the first epitaxial dice, the second epitaxial dice,and the third epitaxial dice that is being transferred, and selectivelybonding to the carrier wafer each of the first epitaxial dice, thesecond epitaxial dice, and the third epitaxial dice that is beingtransferred; and processing the transferred first epitaxial dice, thesecond epitaxial dice, and the third epitaxial dice on the carrier waferto form an RGB emitting devices capable of emitting a red wavelength, agreen wavelength, and a blue wavelength.
 34. The method of claim 33,wherein the integrated multiple wavelength light emitting device is anRGB laser diode device comprising a red laser diode, a green laserdiode, and a blue laser diode.
 35. The method of claim 33 wherein theintegrated multiple wavelength light emitting device is an RGB SLEDdevice comprising a red SLED, a green SLED, and a blue SLED.
 36. Themethod of claim 33, wherein the optical emission comprising a redwavelength, a green wavelength, and a blue wavelengths emitted from theintegrated multiple-wavelength light emitting device is opticallycoupled to a micro-display such as a MEMS scanning mirror, DLP, or LCOS.